Classical and quantum magnetoresistance in a two-subband electron system


Autoria(s): Mamani, Nilo Francisco Cano; Gusev, Gennady; Silva, Euzi Conceicao Fernandes da; RAICHEV, O. E.; Quivy, Alain Andre; BAKAROV, A. K.
Contribuinte(s)

UNIVERSIDADE DE SÃO PAULO

Data(s)

18/04/2012

18/04/2012

2009

Resumo

We observe a large positive magnetoresistance in a bilayer electron system (double quantum well) as the latter is driven by the external gate from double to single layer configuration. Both classical and quantum contributions to magnetotransport are found to be important for explanation of this effect. We demonstrate that these contributions can be separated experimentally by studying the magnetic-field dependence of the resistance at different gate voltages. The experimental results are analyzed and described by using the theory of low-field magnetotransport in the systems with two occupied subbands.

FAPESP

CNPq

Identificador

PHYSICAL REVIEW B, v.80, n.8, 2009

1098-0121

http://producao.usp.br/handle/BDPI/16234

10.1103/PhysRevB.80.085304

http://dx.doi.org/10.1103/PhysRevB.80.085304

Idioma(s)

eng

Publicador

AMER PHYSICAL SOC

Relação

Physical Review B

Direitos

restrictedAccess

Copyright AMER PHYSICAL SOC

Palavras-Chave #aluminium compounds #gallium arsenide #gallium compounds #III-V semiconductors #magnetic field effects #magnetoresistance #semiconductor quantum wells #WELLS #Physics, Condensed Matter
Tipo

article

original article

publishedVersion