Classical and quantum magnetoresistance in a two-subband electron system
Contribuinte(s) |
UNIVERSIDADE DE SÃO PAULO |
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Data(s) |
18/04/2012
18/04/2012
2009
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Resumo |
We observe a large positive magnetoresistance in a bilayer electron system (double quantum well) as the latter is driven by the external gate from double to single layer configuration. Both classical and quantum contributions to magnetotransport are found to be important for explanation of this effect. We demonstrate that these contributions can be separated experimentally by studying the magnetic-field dependence of the resistance at different gate voltages. The experimental results are analyzed and described by using the theory of low-field magnetotransport in the systems with two occupied subbands. FAPESP CNPq |
Identificador |
PHYSICAL REVIEW B, v.80, n.8, 2009 1098-0121 http://producao.usp.br/handle/BDPI/16234 10.1103/PhysRevB.80.085304 |
Idioma(s) |
eng |
Publicador |
AMER PHYSICAL SOC |
Relação |
Physical Review B |
Direitos |
restrictedAccess Copyright AMER PHYSICAL SOC |
Palavras-Chave | #aluminium compounds #gallium arsenide #gallium compounds #III-V semiconductors #magnetic field effects #magnetoresistance #semiconductor quantum wells #WELLS #Physics, Condensed Matter |
Tipo |
article original article publishedVersion |