A study of disorder effects in random (Al(x)Ga(1-x)As)(n)(Al(y)Ga(1-y)As)(m) superlattices embedded in a wide parabolic potential
Contribuinte(s) |
UNIVERSIDADE DE SÃO PAULO |
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Data(s) |
19/04/2012
19/04/2012
2010
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Resumo |
A photoluminescence (PL) study of the individual electron states localized in a random potential is performed in artificially disordered superlattices embedded in a wide parabolic well. The valence band bowing of the parabolic potential provides a variation of the emission energies which splits the optical transitions corresponding to different wells within the random potential. The blueshift of the PL lines emitted by individual random wells, observed with increasing disorder strength, is demonstrated. The variation of temperature and magnetic field allowed for the behavior of the electrons localized in individual wells of the random potential to be distinguished. Brazilian agencies FAPESP and CNPq FAPESP CNPq Canadian Institute for Photonic Innovations (CIPI) |
Identificador |
APPLIED PHYSICS LETTERS, v.96, n.11, 2010 0003-6951 http://producao.usp.br/handle/BDPI/16444 10.1063/1.3364138 |
Idioma(s) |
eng |
Publicador |
AMER INST PHYSICS |
Relação |
Applied Physics Letters |
Direitos |
openAccess Copyright AMER INST PHYSICS |
Palavras-Chave | #aluminium compounds #gallium arsenide #III-V semiconductors #localised states #photoluminescence #semiconductor quantum wells #semiconductor superlattices #spectral line shift #valence bands #QUANTUM-WELLS #Physics, Applied |
Tipo |
article original article publishedVersion |