A study of disorder effects in random (Al(x)Ga(1-x)As)(n)(Al(y)Ga(1-y)As)(m) superlattices embedded in a wide parabolic potential


Autoria(s): Pusep, Yuri A.; MOHSENI, P. K.; LAPIERRE, R. R.; BAKAROV, A. K.; TOROPOV, A. I.
Contribuinte(s)

UNIVERSIDADE DE SÃO PAULO

Data(s)

19/04/2012

19/04/2012

2010

Resumo

A photoluminescence (PL) study of the individual electron states localized in a random potential is performed in artificially disordered superlattices embedded in a wide parabolic well. The valence band bowing of the parabolic potential provides a variation of the emission energies which splits the optical transitions corresponding to different wells within the random potential. The blueshift of the PL lines emitted by individual random wells, observed with increasing disorder strength, is demonstrated. The variation of temperature and magnetic field allowed for the behavior of the electrons localized in individual wells of the random potential to be distinguished.

Brazilian agencies FAPESP and CNPq

FAPESP

CNPq

Canadian Institute for Photonic Innovations (CIPI)

Identificador

APPLIED PHYSICS LETTERS, v.96, n.11, 2010

0003-6951

http://producao.usp.br/handle/BDPI/16444

10.1063/1.3364138

http://dx.doi.org/10.1063/1.3364138

Idioma(s)

eng

Publicador

AMER INST PHYSICS

Relação

Applied Physics Letters

Direitos

openAccess

Copyright AMER INST PHYSICS

Palavras-Chave #aluminium compounds #gallium arsenide #III-V semiconductors #localised states #photoluminescence #semiconductor quantum wells #semiconductor superlattices #spectral line shift #valence bands #QUANTUM-WELLS #Physics, Applied
Tipo

article

original article

publishedVersion