Semiconducting Sn(3)O(4) nanobelts: Growth and electronic structure
Contribuinte(s) |
UNIVERSIDADE DE SÃO PAULO |
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Data(s) |
19/04/2012
19/04/2012
2010
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Resumo |
The study of structures based on nonstoichiometric SnO(2-x) compounds, besides experimentally observed, is a challenging task taking into account their instabilities. In this paper, we report on single crystal Sn(3)O(4) nanobelts, which were successfully grown by a carbothermal evaporation process of SnO(2) powder in association with the well known vapor-solid mechanism. By combining the structural data and transport properties, the samples were investigated. The results showed a triclinic semiconductor structure with a fundamental gap of 2.9 eV. The semiconductor behavior was confirmed by the electron transport data, which pointed to the variable range hopping process as the main conduction mechanism, thus giving consistent support to the mechanisms underlying the observed semiconducting character. FAPESP CNPq Coordenacao de Aperfeicoamento de Pessoal de Nivel Superior (CAPES) |
Identificador |
JOURNAL OF APPLIED PHYSICS, v.107, n.3, 2010 0021-8979 http://producao.usp.br/handle/BDPI/16449 10.1063/1.3294613 |
Idioma(s) |
eng |
Publicador |
AMER INST PHYSICS |
Relação |
Journal of Applied Physics |
Direitos |
openAccess Copyright AMER INST PHYSICS |
Palavras-Chave | #electronic structure #hopping conduction #nanobelts #tin compounds #wide band gap semiconductors #X-RAY-DIFFRACTION #TIN OXIDE #CARBOTHERMAL REDUCTION #THIN-FILMS #SNO2 #OXIDATION #NANORIBBONS #SURFACE #OXYGEN #Physics, Applied |
Tipo |
article original article publishedVersion |