Semiconducting Sn(3)O(4) nanobelts: Growth and electronic structure


Autoria(s): BERENGUE, O. M.; SIMON, R. A.; CHIQUITO, A. J.; DALMASCHIO, C. J.; LEITE, E. R.; GUERREIRO, H. A.; GUIMARAES, Francisco Eduardo Gontijo
Contribuinte(s)

UNIVERSIDADE DE SÃO PAULO

Data(s)

19/04/2012

19/04/2012

2010

Resumo

The study of structures based on nonstoichiometric SnO(2-x) compounds, besides experimentally observed, is a challenging task taking into account their instabilities. In this paper, we report on single crystal Sn(3)O(4) nanobelts, which were successfully grown by a carbothermal evaporation process of SnO(2) powder in association with the well known vapor-solid mechanism. By combining the structural data and transport properties, the samples were investigated. The results showed a triclinic semiconductor structure with a fundamental gap of 2.9 eV. The semiconductor behavior was confirmed by the electron transport data, which pointed to the variable range hopping process as the main conduction mechanism, thus giving consistent support to the mechanisms underlying the observed semiconducting character.

FAPESP

CNPq

Coordenacao de Aperfeicoamento de Pessoal de Nivel Superior (CAPES)

Identificador

JOURNAL OF APPLIED PHYSICS, v.107, n.3, 2010

0021-8979

http://producao.usp.br/handle/BDPI/16449

10.1063/1.3294613

http://dx.doi.org/10.1063/1.3294613

Idioma(s)

eng

Publicador

AMER INST PHYSICS

Relação

Journal of Applied Physics

Direitos

openAccess

Copyright AMER INST PHYSICS

Palavras-Chave #electronic structure #hopping conduction #nanobelts #tin compounds #wide band gap semiconductors #X-RAY-DIFFRACTION #TIN OXIDE #CARBOTHERMAL REDUCTION #THIN-FILMS #SNO2 #OXIDATION #NANORIBBONS #SURFACE #OXYGEN #Physics, Applied
Tipo

article

original article

publishedVersion