Structural and optical analysis of GaAsP/GaP core-shell nanowires
Contribuinte(s) |
UNIVERSIDADE DE SÃO PAULO |
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Data(s) |
19/04/2012
19/04/2012
2009
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Resumo |
The structural and optical properties of GaAsP/GaP core-shell nanowires grown by gas source molecular beam epitaxy were investigated by transmission electron microscopy, Raman spectroscopy, photoluminescence (PL), and magneto-PL. The effects of surface depletion and compositional variations in the ternary alloy manifested as a redshift in GaAsP PL upon surface passivation, and a decrease in redshift in PL in the presence of a magnetic field due to spatial confinement of carriers. FAPESP CNPq Natural Sciences and Engineering Research Council of Canada (NSERC) Ontario Centres of Excellence Canadian Institute for Photonic Innovations (CIPI) |
Identificador |
JOURNAL OF APPLIED PHYSICS, v.106, n.12, 2009 0021-8979 http://producao.usp.br/handle/BDPI/16454 10.1063/1.3269724 |
Idioma(s) |
eng |
Publicador |
AMER INST PHYSICS |
Relação |
Journal of Applied Physics |
Direitos |
openAccess Copyright AMER INST PHYSICS |
Palavras-Chave | #gallium arsenide #gallium compounds #III-V semiconductors #magneto-optical effects #molecular beam epitaxial growth #nanowires #passivation #photoluminescence #Raman spectra #red shift #semiconductor quantum wires #transmission electron microscopy #MOLECULAR-BEAM EPITAXY #GAAS NANOWIRES #GROWTH #GAP #Physics, Applied |
Tipo |
article original article publishedVersion |