Structural and optical analysis of GaAsP/GaP core-shell nanowires


Autoria(s): MOHSENI, P. K.; RODRIGUES, A. D.; GALZERANI, J. C.; Pusep, Yuri A.; LAPIERRE, R. R.
Contribuinte(s)

UNIVERSIDADE DE SÃO PAULO

Data(s)

19/04/2012

19/04/2012

2009

Resumo

The structural and optical properties of GaAsP/GaP core-shell nanowires grown by gas source molecular beam epitaxy were investigated by transmission electron microscopy, Raman spectroscopy, photoluminescence (PL), and magneto-PL. The effects of surface depletion and compositional variations in the ternary alloy manifested as a redshift in GaAsP PL upon surface passivation, and a decrease in redshift in PL in the presence of a magnetic field due to spatial confinement of carriers.

FAPESP

CNPq

Natural Sciences and Engineering Research Council of Canada (NSERC)

Ontario Centres of Excellence

Canadian Institute for Photonic Innovations (CIPI)

Identificador

JOURNAL OF APPLIED PHYSICS, v.106, n.12, 2009

0021-8979

http://producao.usp.br/handle/BDPI/16454

10.1063/1.3269724

http://dx.doi.org/10.1063/1.3269724

Idioma(s)

eng

Publicador

AMER INST PHYSICS

Relação

Journal of Applied Physics

Direitos

openAccess

Copyright AMER INST PHYSICS

Palavras-Chave #gallium arsenide #gallium compounds #III-V semiconductors #magneto-optical effects #molecular beam epitaxial growth #nanowires #passivation #photoluminescence #Raman spectra #red shift #semiconductor quantum wires #transmission electron microscopy #MOLECULAR-BEAM EPITAXY #GAAS NANOWIRES #GROWTH #GAP #Physics, Applied
Tipo

article

original article

publishedVersion