铁系催化剂聚合1，3-双烯烃的研究

1，2-聚丁二烯和3，4-聚异戊二烯是制造高性能轮胎的原料。本论文研究了以含磷化合物为第三组份的铁催化剂合成1，2-聚丁二烯和3，4-聚异戊二烯的反应规律：1．以二乙基亚磷酸酷为第三组份的铁催化剂可在己烷中，较高温度（50℃）下聚合1，3-丁二烯。通过控制催化剂组份的配比，可制备间同和无规1，2-聚丁二烯。所得间同1，2-聚丁二烯的1，2-结构含量为91％，间规度为90％；所得无规1，2-聚丁二烯的硫化胶具有优异的抗干、湿滑性能。2．以三苯基磷酸酷为第三组份的铁催化剂是合成高间同1，2一聚丁二烯的高效催化剂。所得聚合物具有高的1，2-结构含量（ca.95％），高的间规度（ca.95％）。聚合物的微观结构与催化剂组成等反应因素无关。3．以二烷基亚磷酸醋为第三组份的铁催化剂可在己烷中，较高温度（50℃）下聚合异戊二烯。二烷基亚磷酸醋中烷基影响聚合活性的顺序为乙基一甲基＞正丁基＞异辛基。所得聚异戊二烯的3，4（含1，2）结构含量保持在60％左右，不受反应条件的影响。4．改性甲基铝氧烷（MMAO）活化的铁催化剂聚合异戊二烯，在相当低的MMAO用量下（Al／Fe=20，摩尔比）即有高的催化活性。溶剂影响聚合活性的顺序为甲苯＞环己烷＞己烷＞二氯甲烷。所得聚异戊二烯的3，4（含1，2）结构含量稳定在60％。

p型掺杂1.3 μm InAs/GaAs量子点激光器的最大模式增益特性的研究

对p型掺杂1.3 μm InAs/GaAs量子点激光器的最大模式增益进行了实验和理论分析.实验上,测量了不同腔长激光器阈值电流密度与总损耗的对应关系,拟合出的最大模式增益为17.5 cm~(-1),与相同结构非掺杂量子点激光器的最大模式增益一致.同时理论分析表明,p型掺杂对InAs/GaAs量子点激光器的最大模式增益并无影响,并且最大模式增益的计算结果与实验值相符.具有较小高度或高宽比的量子点能达到更高的最大模式增益,而较高的最大模式增益对p型掺杂1.3 μm InAs/GaAs自组织量子点激光器在光通信系统中的应用具有重要意义.

1．3μm量子点垂直腔面发射激光器高频响应的优化设计

结合垂直腔面发射激光器（VCSEL）原理以及量子点增益特点，计算了有源层P掺杂结构的量子点VCSEL的材料增益和3dB带宽，发现P掺杂结构可以大大提高频率特性．结合VCSEL激射条件和阈值特性，分析了对VCSEL结构的要求；分析了分布参数对频率特性的影响，对其外部封装提出了要求．设计了高频率响应的含氧化限制层的1．3μm量子点VCSEL结构．

1.3μm InGaAs/InAs/GaAs Self-Assembled Quantum Dot Laser Diode Grown by Molecular Beam Epitaxy

The growth of multi-layer InGaAs/InAs/GaAs self-assembled quantum dots （QDs） by molecular beam epitaxy （MBE） is investigated,and a QD laser diode lasing at 1.33μm in continuous operation mode at room temperature is reported. The full width at half maximum of the band edge emitting peaks of the photoluminescence （PL） spectra at room temperature is less than 35meV for most of the multi-layer QD samples,revealing good,reproducible MBE growth conditions. Moreover,atomic force microscopy images show that the QD surface density can be controlled in the range from 1×10^10 to 7 ×10^10 cm^-2 . The best PL properties are obtained at a QD surface density of about 4×10^10cm^-2. Edge emitting lasers containing 3 and 5 stacked QD layers as the active layer lasing at room temperature in continuous wave operation mode are reported.

1.3-μm uncooled 10 Gb/s directly modulated MQW AlGaInAs/InP laser diodes

In this paper, we report a novel 1.3-μm uncooled AlGaInAs/InP multiple quantum well (MQW) ridge waveguide laser diodes. By optimizing the design of MQW structure and facet coatings, together with the application of reversed-mesa ridge waveguide (RM-RWG) structure, polyimide planarization, and lift-off processes technology, an uncooled 1.3-μm, 10-Gb/s directly modulated MQW ridge waveguide laser diode was successfully fabricated. The threshold current and the slope efficiency were 7 mA and 0.48 mW/mA, respectively. The directly modulated bandwidths of 11 and 9.2 GHz were achieved at room temperature and 80 Celsius degrees, respectively.

1.3μm GaAs基量子点垂直腔面发射激光器结构设计与分析

结合垂直腔面发射激光器(VCSEL)原理以及量子点增益特点,计算了不同结构VCSEL的腔内损耗和量子点的模式增益.分析了激光器阈值特性以及氧化限制层对光损耗的影响.设计了含氧化限制层的1.3 μm量子点VCSEL结构.

Material Growth and Device Fabrication of GaAs Based 1.3μm GaInNAs Quantum Well Laser Diodes

Material growth and device fabrication of the first 1.3μm quantum well （QW） edge emitting laser diodes in China are reported. Through the optimization of the molecular beam epitaxy （MBE） growth conditions and the tuning of the indium and nitrogen composition of the GalnNAs QWs, the emission wavelengths of the QWs can be tuned to 1.3μm. Ridge geometry waveguide laser diodes are fabricated. The lasing wavelength is 1.3μm under continuous current injection at room temperature with threshold current of 1kA/cm^2 for the laser diode structures with the cleaved facet mirrors. The output light power over 30mW is obtained.

Growth of Space Ordered on GaAs（100） Vicinal 1.3μm InAs Quantum Dots Substrates by MOCVD

Space ordered 1.3μm self-assembled InAs QDs are grown on GaAs（100） vicinal substrates by MOCVD. Photoluminescence measurements show that the dots on vicinal substrates have a much higher PL intensity and a narrower FWHM than those of dots on exact substrates, which indicates better material quality. To obtain 1.3μm emissions of InAs QDs, the role of the so called InGaAs strain cap layer （SCL） and the strain buffer layer （SBL） in the strain relaxation process in quantum dots is studied. While the use of SBL results only in a small change of emission wavelength,SCL can extend the QD＇s emission over 1.3μm due to the effective strain reducing effect of SCL.

In0.2 Ga0.8 As-GaAs复合应力缓冲层上的1.3 μmInAs/GaAs自组织量子点

用光荧光谱和原子力显微镜测试技术系统研究了在2 nm In0.2Ga0.8As和x ML GaAs的复合应力缓冲层上生长的InAs/GaAs自组织量子点的发光特性和表面形貌.采用In0.2Ga0.8As与薄层GaAs复合的应力缓冲层,由于减少了晶格失配度致使量子点密度从约1.7×109 cm-2显著增加到约3.8×109cm-2.同时,复合层也有利于提高量子点中In的组份,使量子点的高宽比增加,促进量子点发光峰红移.对于x=10 ML的样品室温下基态发光峰达到1350 nm.

A 1.3μm Low-Threshold Edge-Emitting Laser with AlInAs-Oxide Confinement Layers

A 1.3μm low-threshold edge-emitting AlGaInAs multiple-quantum-well(MQW) laser with AlInAs-oxide confinement layers is fabricated.The Al-contained waveguide layers upper and low the active layers are oxidized as current-confined layers using wet-oxidation technique.This structure provides excellent current and optical confinement,resulting in 12.9mA of a low continuous wave threshold current and 0.47W/A of a high slope efficiency of per facet at room temperature for a 5-μm-wide current aperture.Compared with the ridge waveguide laser with the same-width ridge,the threshold current of the AlInAs-oxide confinement laser has decreased by 31.7% and the slope efficiency has increased a little.Both low threshold and high slope efficiency indicate that lateral current confinement can be realized by oxidizing AlInAs waveguide layers.The full width of half maximum angles of the Al-InAs-oxide confinement laser are 21.6° for the horizontal and 36.1° for the vertical,which demonstrate the ability of the AlInAs oxide in preventing the optical field from spreading laterally.

Surface Morphology and Photoluminescence of 1.3 μm Wavelength In(Ga)As/GaAs Quantum Dots

Self-organized In_(0.5)Ga_(0.5)As/GaAs quantum island structure emitting at 1. 35 (im at room temperature has been successfully fabricated by molecular beam epitaxy (MBE) via cycled (InAs)_1/( GaAs)_1 monolayer deposition method. Photoluminescence (PL) measurement shows that very narrow PL linewidth of 19.2 meV at 300 K has been reached for the first time, indicating effective suppression of inhomogeneous broadening of optical emission from the In_(0.5)Ga_(0.5)As islands structure. Our results provide important information for optimizing the epitaxial structures of 1.3 μm wavelength quantum dot (QD) devices.

1.3μm Si-Based MOEMS Optical Tunable Filter with a Tuning Range of 90nm

Optical filters capable of single control parameter-based wide tuning are implemented and studied. A prototype surface micromachined 1.3μm Si-based MOEMS (micro-opto-electro-mechanical-systems) tunable filter exhibits a continuous and large tuning range of 90 nm at 50 V tuning voltage. The filter can be integrated with Si-based photodetector in a low-cost component for coarse wavelength division multiplexing systems operating in the 1.3μm band.

1.3微米发光自组织InAs/GaAs量子点的电致发光研究

用优化的MBE参数生长了1.3μm发光的InAs/GaAs量子点材料，并制成发光二极管，对不同温度和有源区长度下样品的电致发光谱进行了细致的研究。观察到两个明显的电致发光峰，分别对应于量子点基态和激发态的辐射复合发光。实验表明，由于能态填充效应的影响，适当增大量子点发光器件有源区长度，更有利于获得基态的光发射。这个结果提供了一种控制和调节InAs/GaAs量子点发光二极管和激光器的工作波长的方法。

巨磁电阻材料La_(2/3)Ca_(1/3)Mn(O_(1-x),F_x)_3的研究

主要采用了X射线衍射、Mossbauer谱、磁测量等方法系统研究了块体巨磁电阻材料La_(2/3)Ca_(1/3)Mn_(1-x)Fe_xO_3在不同铁含量(0≤x≤0.84)时结构、性能、磁性的变化，并给予合理的解释。在0