β-Ga2O3单晶浮区法生长及其光学性质

用浮区法生长得到了宽禁带半导体材料β-Ga2O3单晶，对其吸收光谱、荧光光谱进行了分析。解释了禁带部分展宽的原因。并研究了Sn^4＋和Ti^4＋的掺杂对其紫外吸收边影响。β-Ga2O3单晶的荧光谱不仅观察到了3个特征峰：紫外光（395nm）、蓝光（471nm）、绿光（559nm），还观察到了在277和297nm的紫外光和692nm的红光荧光发射。

Composite substrate LiGaO2(001)/beta-Ga2O3(100) fabricated by vapor transport equilibration

Highly (001) orientation LiGaO2 layers have been successfully fabricated on (100) beta-Ga2O3 surface by vapor transport equilibration (VTE) technique. The temperature is very important for the WE treatment. At low temperature (800 degrees C), LiGaO(2)layers are textured. As the temperature was raised to 1100 C the layer becomes highly oriented in the [100] direction. It shows that the best temperature for WE treatment is 1100 degrees C. This technique is promising to fabricate small lattice mismatch composite substrate of LiGaO2 (001)//beta-Ga2O3 (100) for GaN films. (c) 2006 Elsevier B.V. All rights reserved.

透明导电氧化物β-Ga2O3单晶生长的研究进展

本文对β-Ga2O3单晶体的研究情况进行了综合，主要介绍了β-Ga2O3单晶体的生长方法：Verneuil法、提拉法和浮区法生长技术，并简单介绍了β-Ga2O3单晶体的光学和电学性质及其在GaN衬底方面的应用。β-Ga2O3单晶体的优异性质使其可以成为新一代的透明导电材料。

Single crystal beta-Ga2O3: Cr grown by floating zone technique and its optical properties

beta-Ga2O3: Cr single crystals were grown by floating zone technique. Absorption spectra and fluorescence spectra were measured at room temperature. The values of field splitting parameter Dq and Racah parameter B were obtained by the peak values of absorption spectra. The value 10Dq/B=23.14 manifests that in beta-Ga2O3 crystals Cr3+ ions are influenced by low energy crystal field. After high temperature annealing in air, the Cr3+ intrinsic emission was enhanced and the green luminescence disappeared. The strong and broad 691 nm emission was obtained at 420 nm excitation due to the electron transition occurred from T-4(2) to (4)A(2). The studies manifest that the beta-Ga2O3 crystals have the potential application for tunable laser.

β-Ga2O3：Cr单晶体的浮区法生长及光学特性

利用浮区法生长得到β-Ga2O3：Cr单晶体．在室温下测试了β-Ga2O3：Cr单晶体的吸收光谱和发射光谱．通过吸收光谱计算了晶体场分裂系数Dq和Racah系数，得到10Dq/B=23．14，表明Cr^3＋在β-Ga2O3晶体中处于较弱的晶体场β-Ga2O3：Cr单晶体经高温退火后Cr^3＋的发射明显加强，而绿光的发射减弱．采用420nm波长激发，在691nm可得到强而宽的特征发射，此发射对应于Cr^3＋的^4T2→^4A2跃迁．

β-Ga2O3 单晶NH3中氮化的研究

为了将β-Ga2O3单晶应用于作为外延生长优质GaN薄膜的衬底材料，本文对β-Ga2O3 (100)进行了氮化处理，并且主要讨论了氮化温度以及β-Ga2O3表面的粗糙程度对GaN形成的影响。我们发现，最理想的氮化温度在900oC。此时，在抛光的β-Ga2O3的表面上生成了一层具有六方结构并且有择优取向的GaN层。本文同时也对氮化的机理进行了讨论。

Demonstration of GaN/InGaN light emitting diodes on (100) beta-Ga2O3 substrates by metalorganic chemical vapour deposition

The growth and fabrication of GaN/InGaN multiple quantum well (MQW) light emitting diodes ( LEDs) on ( 100) beta-Ga2O3 single crystal substrates by metal-organic chemical vapour deposition (MOCVD) technique are reported. x-ray diffraction (XRD) theta-2 theta. scan spectroscopy is carried out on the GaN buffer layer grown on a ( 100) beta-Ga2O3 substrate. The spectrum presents several sharp peaks corresponding to the ( 100) beta-Ga2O3 and ( 004) GaN. High-quality ( 0002) GaN material is obtained. The emission characteristics of the GaN/InGaN MQW LED are measurement. The first green LED on beta-Ga2O3 with vertical current injection is demonstrated.

Espectroscopias de fotoluminescência, excitação e fotoacústica de amostras MgGa2O4: Ni2+ e GaNbO4-GaNb11O29-Ga2O3: Cr3+

Esta tese apresenta as espectroscopias de fotoluminescência, excitação e fotoacústica de amostras MgGa2O4 dopadas com 0,1%, 0,5% e 1,0% de Ni2+, obtidas pelo método de estado sólido e duas amostras distintas GaNbO4-GaNb11O29-Ga2O3 dopadas com 1,0% de Cr3+, uma sintetizada por reação de estado sólido e a outra pelo método de acetato. As amostras foram identificadas por Difração de Raios X e os dados foram refinados pelo método de Rietveld. A morfologia das amostras foi observada por Microscopia Eletrônica de Varredura. Os espectros ópticos das amostras apresentaram bandas de absorção e emissão do visível ao infravermelho próximo. As transições de energia foram analisadas com base na teoria de campo cristalino e os parâmetros de energia foram obtidos a partir de espectros de absorção e das matrizes de Tanabe-Sugano.

Luminescence emission originating from nitrogen doping of beta-Ga2O3 nanowires

Nitrogen-doped beta-Ga2O3 nanowires (GaO NWs) were prepared by annealing the as-grown nanowires in an ammonia atmosphere. The optical properties of the nitrogen-doped GaO NWs were studied by measurements of the photoluminescence and phosphorescence decay at the temperature range between 10 and 300 K. The experimental results revealed that nitrogen doping in GaO NWs induced a novel intensive red-light emission around 1.67 eV, with a characteristic decay time around 136 mus at 77 K, much shorter than that of the blue emission (a decay time of 457 mus). The time decay and temperature-dependent luminescence spectra were calculated theoretically based on a donor-acceptor pair model, which is in excellent agreement with the experimental data. This result suggests that the observed novel red-light emission originates from the recombination of an electron trapped on a donor due to oxygen vacancies and a hole trapped on an acceptor due to nitrogen doping.

Influence of nitridation time on the morphology of GaN nanorods synthesized by nitriding Ga2O3/ZnO films

Gallium nitride (GaN) nanorods were synthesized by nitriding Ga2O3/ZnO films which were deposited in turn on Si (111) substrates using radio frequency (RF) magnetron sputtering system. In the nitridation process, ZnO was reduced to Zn and Zn sublimated at 950 degrees C. Ga2O3 was reduced to Ga2O and Ga2O reacted with NH3 to synthesize GaN nanorods with the assistance of the sublimation of Zn. The morphology and structure of the nanorods were studied by scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM) and selected-area electron diffraction (SAED). The composition of GaN nanorods was studied by Fourier-transform infrared spectrophotometer (FTIR). The synthesized nanorods is hexagonal wurtzite structured. Nitridation time of the samples has an evident influence on the morphology of GaN nanorods synthesized by this method. (c) 2006 Elsevier B.V. All rights reserved.

Photoluminescence and electroluminescence of (Gd2O3-Ga2O3): Ce thin film

A novel electroluminescence oxide phosphor (Gd2O3-Ga2O3):Ce has been prepared by electron beam evaporation. The emission peaks of photoluminescence lie at 390nm and a shoulder at 440nm. However, the electroluminescence of the (Gd2O3-Ga2O3):Ce thin film have four emission peaks at 358nm, 390nm, 439nm and 510nm, respectively. The optical absorption of (Gd2O3-Ga2O3):Ce thin film and the photoluminescence of composite materials with various ratios of Ga2O3/(Gd2O3+Ga2O3) have also been described to investigate the origin of emission of photoluminescence and electroluminescence.

Comparative study of Ga2O3 : Dy3+ phosphors prepared by three methods

Trivalent dysprosium (Dy3+)-activated beta-gallium oxide (beta-Ga2O3) phosphors were synthesized by solid-state (SS), coprecipitation (CP), and citrate gel (CG) methods, respectively. The resulting beta-Ga2O3:Dy3+ phosphors were well characterized by X-ray diffraction, field-emission scanning electron microscopy (FESEM), and by photoluminescence and cathodoluminescence spectra. The phosphors prepared by different methods show different luminescence properties under the excitation of UV and low-voltage cathode rays. There exists an energy transfer from the beta-Ga2O3 host lattices to Dy3+, and the energy transfer efficiency was higher in the CG-derived phosphors than those of the SS- and CP-derived phosphors. Factors influencing the intensity of luminescence and the energy transfer efficiency from beta-Ga2O3 host to Dy3+ in beta-Ga2O3:Dy3+ phosphors were investigated in detail. It is shown that the CG method is the most respected process for the preparation of beta-Ga2O3:Dy3+ phosphors.

Preparation of Ga2O3 nanoribbons and tubes by electrospinning

A simple way to synthesize beta-Ga2O3 nanoribbons and tubes by electrospinning is introduced. The diameters of the electrospun fibers range from 150 nm to 2.5 mu m and their lengths reach up to several millimeters. The relationship among precursors, precursor concentrations, and crystal growth of beta-Ga2O3 nanoribbons and tubes are discussed. The structures of beta-Ga2O3 fibers have been investigated by various methods such as thermogravimetric (TG) and differential thermal analysis (DTA), X-ray diffraction, FT-IR, Raman spectra, scanning electron micrograph (SEM), and transmission electron micrograph (TEM).

Spectroscopic properties of Yb3+ doped PbO-Bi2O3-Ga2O3 glasses for IR laser applications

PbO-Bi2O3-Ga2O3 glasses doped with different concentrations of Yb3+ are presented. The spectroscopic properties and laser parameters are calculated and a comparison between different results obtained when calculating the Yb3+ emission cross-section with the reciprocity method and with the Fuchtbauer-Ladenburg formula is presented. The behavior of the near-infrared luminescence is described theoretically by a rate equation and compared with the experimental results. This host doped with Yb3+ is a promising material for laser action at 1019 nm, with properties similar to other known glasses used as active laser media; the emission cross-section of 1.1 x 10(-20) cm(2), the high absorption cross-section (of 2.0 x 10(-20) cm(2)) and a minimum pump intensity of 2.4 kW/cm(2) are interesting properties for short pulse generation. (C) 2005 Elsevier B.V. All rights reserved.

Raman spectroscopy analysis of structural photoinduced changes in GeS2 + Ga2O3 thin films

Photoexpansion and photobleaching effects have been observed in amorphous GeS2 + Ga2O3 (GGSO) thin films, when their surfaces were exposed to UV light. The photoinduced changes on the surface of the samples are indications that the structure has been changed as a result of photoexcitation. In this paper, micro-Raman, energy dispersive X-ray analysis (EDX) and backscattering electrons (BSE) microscopy were the techniques used to identify the origin of these effects. Raman spectra revealed that these phenomena are a consequence of the Ge-S bonds' breakdown and the formation of new Ge-O bonds, with an increase of the modes associated with Ge-O-Ge bonds and mixed oxysulphide tetrahedral units (S-Ge-O). The chemical composition measured by EDX and BSE microscopy images indicated that the irradiated area is oxygen rich. So, the present paper provides fundamental insights into the influence of the oxygen within the glass matrix on the considered photoinduced effects. (C) 2010 Elsevier B.V. All rights reserved.