高迁移率Si/Si（0.7）Ge（0.3）/Si调帛掺杂异质结构的生长和输运性质

863计划,国家攀登计划

短周期（Ge）n （Si）n 应变超晶格电子结构的自洽赝势计算

中国科学院基金,国家自然科学基金

Optical characterization of the Ge/Si (001) islands in multilayer structure

We show that the observed temperature dependence of the photoluminescence (PL) features can be consistently explained in terms of thermally activated carrier transfer processes in a multilayer structure of the self-organized Ge/Si(001) islands. The type II (electron confinement in Si) behavior of the Ge/Si islands is verified. With elevated temperature, the thermally activated electrons and holes enter the Ge islands from the Si and from the wetting layer (WL), respectively. An involvement of the type I (spatially direct) into type II (spatially indirect) recombination transition takes place at a high temperature.

Type-II SiGe/Si MQWS (multi-quantum wells) and self-organized Ge/Si islands grown by UHV/CVD system

Type-II SiGe/Si MQWs (Multi-Quantum Wells) and Self-Organized Ge/Si Islands were successfully grown by a homemade ultra-high vacuum/chemical vapor deposition (UHV/CVD) system. Growth characteristics and PL (photoluminescence) spectra at different temperature were measured. It demonstrated that some accumulation of carriers in the islands results in the increase of the integrated PL intensity of island-related at a certain temperature range.

Boron diffusion in Ge+ premorphized and BF2+ implanted Si(001)

The annealing behavior of Si implanted with Ge and then BF2 has been characterized by double crystal X-ray diffraction (DCXRD) and secondary ion mass spectroscopy (SIMS). The results show that annealing at 600 degrees C for 60 minutes can only remove a little damage induced by implantation and nearly no redistribution of Ge and B atoms has occurred during the annealing. The initial crystallinity of Si is fully recovered after annealing at 950 degrees C for 60 minutes and accompanied by Ge diffusion. Very shallow boron junction depth has been formed. When annealing temperature rises to 1050 degrees C, B diffusion enhances, which leads to a deep diffusion and good distribution of B atoms into the Si substrate. The X-ray diffraction (004) rocking curves from the samples annealed at 1050 degrees C for 60 minutes display two SiGe peaks, which may be related to the B concentration profiles.

Medium-spin states in Ge-70 and the role of the g(9/2) orbital

Medium-spin states of Ge-70 have been studied via the Ni-60(C-12,2p gamma)Ge-70 reaction at 45 MeV. The ground-state band and the second 0(+) band have been extended to the 12(+) and 8(+) states, respectively. Two negative-parity bands, one of which has a coupled structure and the other has a decoupled structure, have been observed additionally. Although the latter decoupled structure was known up to the (21(-)) state from a previous experiment, the part of the level scheme up to the 15(-) state has been largely modified by the present experiment. Backbendings observed in the positive- and negative-parity yrast bands have been compared with those of the neighboring even Ge isotopes. The experimental level structure has been compared with the shell-model calculations in the model space (2p(3/2), 1f(5/2), 2(p1/2), 1g(9/2)) employing two kinds of effective interactions, one of which is an extended P + QQ interaction with monopole interactions and the other is developed from a renormalized G matrix. Microscopic structures of the observed bands have been discussed with the help of the shell-model calculations.

水稻外观品质稳定性分析及G×E互作与气候因子的关系

基于AMM I模型,研究了25个水稻品种外观品质性状与环境的交互作用,并对参试品种垩白品质性状的稳定性、G×E互作与气候因子的关系及气候生态适应性进行了探讨。结果表明,稻米长、宽及长宽比的G×E互作效应差异不显著,垩白率和垩白度的G×E互作效应达到了1%的显著水平。在此基础上将参试品种分为稳定性最好垩白适中、稳定性适中垩白较小及稳定性和垩白性状均较差三类。垩白品质性状的iPCA与水稻生育期内的气温、日照、降雨的相关分析表明气候因子是决定G×E互作的一项重要环境因子。据此得到不同品种对气候因子的最佳品质适应性,如品种V 9和V 24(沈农9819和0142)的垩白率对温度较低的环境,V 23(盐优5858)的垩白度对相对寡照高温的环境具有特殊适应性,在实际生产中选择与这些品种有负向互作的地点可获得较低的稻米垩白率和垩白度。

Rare earth complexes with Ge-132 and their catalytic hydrolysis to phosphatide bond of mononucleotide

The complexes of a series of rare earths with Ge-132 have been prepared. The carboxyl anions of Ge-132 molecule were coordinated to rare earth ion with chelate style. In the complexes molecule, the GeO3/2 group of Ge-132 were hydrolyzed to become -Ge(OH)(3) group, and later does:not coordinate with rare earth ions. All of the complexes possess similar properties. In aqueous solution of pH 6 and 50 degrees C, these complexes can obviously selectively catalytically hydrolize the phosphatide bond of 5'-AMP and 5'-dAMP into phosphatic acid and riboside.

The suppression of Ge-132 on the Maillard reaction of BSA by fluorescence spectrum

The fluorescences of BSA and glycosylated BSA were observed respectively. The lambda(cm) of BSA was 340 nm; while the lambda(cm) of glycosylated BSA was 436 nm. Because the fluorescence spectra of them were different greatly, we can observe the suppression of Ge-132 on the Maillard reaction of BSA without any interference of itself. It was showed that the fluorescence intensity of glycosylated BSA increased continuously with the cultured time, Ge-132 may suppress the Maillard reaction of BSA greatly, and the suppressing efficicency would be 32 %. The key site of the Maillard reaction of BSA is free amino groups of alanine residues on N-terminal amino group, besides the epsilon-amino groups of intrachain Lysine residues.

Ge-132稀土配合物及其对单核苷酸磷酯键的催化水解作用

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荧光法研究Ge-132对牛血清白蛋白Mailard反应的抑制作用

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