Optical characterization of the Ge/Si (001) islands in multilayer structure


Autoria(s): Huang CJ; Zuo YH; Li C; Li DZ; Cheng BW; Luo LP; Yu JZ; Wang QM
Data(s)

2001

Resumo

We show that the observed temperature dependence of the photoluminescence (PL) features can be consistently explained in terms of thermally activated carrier transfer processes in a multilayer structure of the self-organized Ge/Si(001) islands. The type II (electron confinement in Si) behavior of the Ge/Si islands is verified. With elevated temperature, the thermally activated electrons and holes enter the Ge islands from the Si and from the wetting layer (WL), respectively. An involvement of the type I (spatially direct) into type II (spatially indirect) recombination transition takes place at a high temperature.

We show that the observed temperature dependence of the photoluminescence (PL) features can be consistently explained in terms of thermally activated carrier transfer processes in a multilayer structure of the self-organized Ge/Si(001) islands. The type II (electron confinement in Si) behavior of the Ge/Si islands is verified. With elevated temperature, the thermally activated electrons and holes enter the Ge islands from the Si and from the wetting layer (WL), respectively. An involvement of the type I (spatially direct) into type II (spatially indirect) recombination transition takes place at a high temperature.

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SPIE.; China Opt & Optoelectr Manufacturers Assoc.; Minist Informat Ind.; China Inst Commun.; NEL NTT Electr Corp.; Credit Suisse First Boston Technol Grp.; China Telecom.; Huawei Technologies.; ZTE Corp.; SANY Optilayer Co Ltd.; Dateng Telecom.; Photon Technol.; O Net Commun Ltd.; China Minist Sci & Technol.; Alcatel.; Corning.; Australia Opt Soc.; Beijing Univ Posts & Telecommun.; Korea Assoc Photon Ind Dev.; Optoelectr Ind Dev Assoc.; Optoelectr Ind & Technol Dev Assoc.; Opt Soc India.; Opt Soc Japan.; Opt Soc Korea.; Photon Ind Dev Assoc.; Photon Assoc.; SPIE Asia Pacific Chapters.; SPIE Tech Grp Opt Networks.; Tsinghua Univ.

Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

SPIE.; China Opt & Optoelectr Manufacturers Assoc.; Minist Informat Ind.; China Inst Commun.; NEL NTT Electr Corp.; Credit Suisse First Boston Technol Grp.; China Telecom.; Huawei Technologies.; ZTE Corp.; SANY Optilayer Co Ltd.; Dateng Telecom.; Photon Technol.; O Net Commun Ltd.; China Minist Sci & Technol.; Alcatel.; Corning.; Australia Opt Soc.; Beijing Univ Posts & Telecommun.; Korea Assoc Photon Ind Dev.; Optoelectr Ind Dev Assoc.; Optoelectr Ind & Technol Dev Assoc.; Opt Soc India.; Opt Soc Japan.; Opt Soc Korea.; Photon Ind Dev Assoc.; Photon Assoc.; SPIE Asia Pacific Chapters.; SPIE Tech Grp Opt Networks.; Tsinghua Univ.

Identificador

http://ir.semi.ac.cn/handle/172111/13649

http://www.irgrid.ac.cn/handle/1471x/105006

Idioma(s)

英语

Publicador

SPIE-INT SOC OPTICAL ENGINEERING

1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA

Fonte

Huang CJ; Zuo YH; Li C; Li DZ; Cheng BW; Luo LP; Yu JZ; Wang QM .Optical characterization of the Ge/Si (001) islands in multilayer structure .见:SPIE-INT SOC OPTICAL ENGINEERING .APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,2001,202-208

Palavras-Chave #光电子学 #Ge/Si islands #quantum dot #band alignment #PL #SI/SI1-XGEX QUANTUM-WELLS #STRANSKI-KRASTANOV GROWTH #II BAND ALIGNMENT #GE ISLANDS #TEMPERATURE-DEPENDENCE #PHOTOLUMINESCENCE #LAYERS #LUMINESCENCE #ORGANIZATION #MECHANISM
Tipo

会议论文