Optical characterization of the Ge/Si (001) islands in multilayer structure
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2001
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Resumo |
We show that the observed temperature dependence of the photoluminescence (PL) features can be consistently explained in terms of thermally activated carrier transfer processes in a multilayer structure of the self-organized Ge/Si(001) islands. The type II (electron confinement in Si) behavior of the Ge/Si islands is verified. With elevated temperature, the thermally activated electrons and holes enter the Ge islands from the Si and from the wetting layer (WL), respectively. An involvement of the type I (spatially direct) into type II (spatially indirect) recombination transition takes place at a high temperature. We show that the observed temperature dependence of the photoluminescence (PL) features can be consistently explained in terms of thermally activated carrier transfer processes in a multilayer structure of the self-organized Ge/Si(001) islands. The type II (electron confinement in Si) behavior of the Ge/Si islands is verified. With elevated temperature, the thermally activated electrons and holes enter the Ge islands from the Si and from the wetting layer (WL), respectively. An involvement of the type I (spatially direct) into type II (spatially indirect) recombination transition takes place at a high temperature. 于2010-10-29批量导入 Made available in DSpace on 2010-10-29T06:36:35Z (GMT). No. of bitstreams: 1 2836.pdf: 228328 bytes, checksum: c5b7ded92756c28a2cf27a4f9e399e72 (MD5) Previous issue date: 2001 SPIE.; China Opt & Optoelectr Manufacturers Assoc.; Minist Informat Ind.; China Inst Commun.; NEL NTT Electr Corp.; Credit Suisse First Boston Technol Grp.; China Telecom.; Huawei Technologies.; ZTE Corp.; SANY Optilayer Co Ltd.; Dateng Telecom.; Photon Technol.; O Net Commun Ltd.; China Minist Sci & Technol.; Alcatel.; Corning.; Australia Opt Soc.; Beijing Univ Posts & Telecommun.; Korea Assoc Photon Ind Dev.; Optoelectr Ind Dev Assoc.; Optoelectr Ind & Technol Dev Assoc.; Opt Soc India.; Opt Soc Japan.; Opt Soc Korea.; Photon Ind Dev Assoc.; Photon Assoc.; SPIE Asia Pacific Chapters.; SPIE Tech Grp Opt Networks.; Tsinghua Univ. Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China SPIE.; China Opt & Optoelectr Manufacturers Assoc.; Minist Informat Ind.; China Inst Commun.; NEL NTT Electr Corp.; Credit Suisse First Boston Technol Grp.; China Telecom.; Huawei Technologies.; ZTE Corp.; SANY Optilayer Co Ltd.; Dateng Telecom.; Photon Technol.; O Net Commun Ltd.; China Minist Sci & Technol.; Alcatel.; Corning.; Australia Opt Soc.; Beijing Univ Posts & Telecommun.; Korea Assoc Photon Ind Dev.; Optoelectr Ind Dev Assoc.; Optoelectr Ind & Technol Dev Assoc.; Opt Soc India.; Opt Soc Japan.; Opt Soc Korea.; Photon Ind Dev Assoc.; Photon Assoc.; SPIE Asia Pacific Chapters.; SPIE Tech Grp Opt Networks.; Tsinghua Univ. |
Identificador | |
Idioma(s) |
英语 |
Publicador |
SPIE-INT SOC OPTICAL ENGINEERING 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA |
Fonte |
Huang CJ; Zuo YH; Li C; Li DZ; Cheng BW; Luo LP; Yu JZ; Wang QM .Optical characterization of the Ge/Si (001) islands in multilayer structure .见:SPIE-INT SOC OPTICAL ENGINEERING .APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,2001,202-208 |
Palavras-Chave | #光电子学 #Ge/Si islands #quantum dot #band alignment #PL #SI/SI1-XGEX QUANTUM-WELLS #STRANSKI-KRASTANOV GROWTH #II BAND ALIGNMENT #GE ISLANDS #TEMPERATURE-DEPENDENCE #PHOTOLUMINESCENCE #LAYERS #LUMINESCENCE #ORGANIZATION #MECHANISM |
Tipo |
会议论文 |