Influence of the state of the inlet endwall boundary layer on the interaction between pressure surface separation and endwall flows

This paper describes the effect of the state of the inlet boundary layer (laminar or turbulent) on the structure of the endwall flow on two different profiles of low-pressure (LP) turbine blades (solid thin and hollow thick). At present the state of the endwall boundary layer at the inlet of a real LP turbine is not known. The intention of this paper is to show that, for different designs of LP turbine, the state of the inlet boundary layer affects the performance of the blade in very different ways. The testing was completed at low speed in a linear cascade using area traversing, flow visualization and static pressure measurements. The paper shows that, for a laminar inlet boundary layer, the two profiles have a similar loss distribution and structure of endwall flow. However, for a turbulent inlet boundary layer the two profiles are shown to differ significantly in both the total loss and endwall flow structure. The pressure side separation bubble on the solid thin profile is shown to interact with the passage vortex, causing a higher endwall loss than that measured on the hollow thick profile.

Influence of the matrix properties on the performances of Er-doped Si nanoclusters light emitting devices

We investigated the properties of light emitting devices whose active layer consists of Er-doped Si nanoclusters (nc) generated by thermal annealing of Er-doped SiOx layers prepared by magnetron cosputtering. Differently from a widely used technique such as plasma enhanced chemical vapor deposition, sputtering allows to synthesize Er-doped Si nc embedded in an almost stoichiometric oxide matrix, so as to deeply influence the electroluminescence properties of the devices. Relevant results include the need for an unexpected low Si excess for optimizing the device efficiency and, above all, the strong reduction of the influence of Auger de-excitation, which represents the main nonradiative path which limits the performances of such devices and their application in silicon nanophotonics. © 2010 American Institute of Physics.

Magnetic shielding with YBCO coated conductors: Influence of the geometry on its performances

A superconducting magnetic shield can be built as a stack of several sections of milled 2G coated conductors. Each section consists of a closed loop where persistent currents can flow and provide a strong attenuation of external dc magnetic fields. The purpose of the present work is to study experimentally several geometries of such magnetic shields made out of YBa2Cu 3O7 (YBCO) coated conductors from SuperPower. Our aim is to investigate in detail the influence of the aspect ratio and the number of layers of the assembly on the magnetic shielding properties. In order to do so, the magnetic shield is subjected to an axial quasi-static ('dc') magnetic field ramped slowly at a fixed sweep rate. A Hall probe is used to measure the local magnetic induction inside the assembly as a function of the applied magnetic induction. Results show that the shielding factor, SF, (defined as the ratio between the applied magnetic induction and the magnetic induction measured inside the shield) is improved for increasing aspect ratios of the global coated conductor assembly and that the threshold magnetic induction (defined for SF = 10) increases with the number of layers. Using a double layer of 18 sections at T = 77K , dc magnetic fields up to 56 mT can be shielded by a factor larger than 10. Finally, the effect of an air gap of constant width between coated conductor sections is also characterized. © 2002-2011 IEEE.

3D numerical analysis of tunnelling induced damage: the influence of the alignment of a masonry building with the tunnel axis.

The development of infrastructure in major cities often involves tunnelling, which can cause damage to existing structures. Therefore, these projects require a careful prediction of the risk of settlement induced damage. The simplified approach of current methods cannot account for three-dimensional structural aspects of buildings, which can result in an inaccurate evaluation of damage. This paper investigates the effect of the building alignment with the tunnel axis on structural damage. A three-dimensional, phased, fully coupled finite element model with non-linear material properties is used as a tool to perform a parametric study. The model includes the simulation of the tunnel construction process, with the tunnel located adjacent to a masonry building. Three different type of settlements are included (sagging, hogging and a combination of them), with seven different increasing angles of the building with respect to the tunnel axis. The alignment parameter is assessed, based on the maximum occurring crack width, measured in the building. Results show a significant dependency of the final damage on the building and tunnel alignment.

Systematic investigation on the influence of the As-4 flux on the magnetic property of (In,Cr)As quantum dots

We study the structure, optical and magnetic characteristics of self-assembled (In,Cr) As diluted magnetic semiconductor quantum dots as a function of the As-4 flux. Increasing the surface energy by increasing the As4 pressure leads to a smaller number of larger dots for a higher As-4 flux. The remanent magnetization measured at 5K also increases with increasing As-4 flux, which is attributed to the enhancement of the effective Cr content due to the As-4-rich condition. We explore the possibility of tailoring magnetism by controlling the As-4/In flux ratio without changing the Cr concentration. Furthermore, extremely low-density QDs have also been successfully grown. Copyright (C) EPLA, 2008

Influence of the rapid thermal annealing on the properties of thin a-Si films

The variation of the structure, morphology and the electrical properties of thin amorphous silicon films caused by Rapid Thermal Annealing is studied. The films annealed at 1200degreesC for 2 minutes change their structure to polycrystalline and as a result their resistivity decreases by 4 orders of magnitude. Due to the small thickness of the as deposited amorphous silicon the obtained poly-Si is strongly irregular and has many discontinuities in its texture.

Influence of the AlN interlayer crystal quality on the strain evolution of GaN layer grown on Si (111)

The strain evolution in metal organic chemical vapor deposition growth of GaN on Si (111) substrate with an AlN interlayer is studied. During the growth of GaN film on AlN interlayer, the growth stress changes from compression to tension. The study shows that the density of V trenches in the AlN interlayer surface and the threading dislocations generated in the AlN interlayer have a significant influence on this strain evolution process. The dislocations generated in AlN interlayer may thread across the interface and play a key role in the strain evolution process of the GaN layer grown on AlN interlayer.

Analysis of the temperature-induced transition to current self-oscillations in doped GaAs/AlAs superlattices

We observed the decrease of the hysteresis effect and the transition from the stable to the dynamic domain regime in doped superlattices with increasing temperature. The current-voltage characteristics and the behaviours of the domain boundary are dominated by the temperature-dependent lineshape of the electric field dependence of the drift velocity (V(F)), As the peak-valley ratio in the V(F) curve decreases with increasing temperature, the hysteresis will diminish and temporal current self-oscillations will occur. The simulated calculation, which takes the difference in V(F) curves into consideration, gives a good agreement with the experimental results.

INFLUENCE OF THE 90-DEGREES PARTIAL DISLOCATION CORE STRUCTURE IN SILICON ON ENERGY-LEVELS

An LCAO-scheme taking into account 10 atomic orbitals (s-, p-, and d-type) is used to calculate the electronic structure of the reconstructed 90-degrees partial dislocation in Si. Two different valence force fields producing deviating results are used for modelling the core structure. Geometrical data published by another group is also used. The aim is to explore the influence of geometry on energy levels. We find that the band structure depends sensitively on bond angles. Using data determined by the Tersoff potential we obtain two bands of which the upper one penetrates deeply into the indirect band gap while the geometry minimizing the simple Keating potential leaves the gap completely clear of dislocation states. Thus, from a theoretical point of view, the chief difficulty in calculating the electronic structure of the reconstructed 90-degrees partial is the lack of accurate structural information.

Influence of the lateral confining potential on the ballistic electron transport in a quantum wire

A theoretical investigation of ballistic electron transport in a quantum wire with soft wall confinement is presented. A general method of the electron transmission calculation is proposed for structures with complicated geometries. The effects of the lateral guiding potential on ballistic transport are investigated using three soft wall confinement models and the results are compared with those obtained from the hard wall confinement approximation. It is shown that the calculated transmission coefficients are notably dependent on the lateral confining potential especially when the incident electron energy is larger than the energy of the second transverse mode. It is found that the transmission profile obtained from soft wall confinement models exhibits simpler resonance structures than that obtained from the hard wall confinement approximation. Our results suggest that only in the single-channel regime the hard wall confinement approximation can give reasonable results.

Influence of the semi-insulating GaAs Schottky pad on the Schottky barrier in the active layer

The influence of the sidegate voltage on the Schottky barrier in the ion-implanted active layer via the Schottky pad on the semi-insulating GaAs substrate was observed, and the mechanism for such an influence was proposed. (C) 1996 American Institute of Physics.

Influence of the rapid thermal annealing on the properties of thin a-Si films

The variation of the structure, morphology and the electrical properties of thin amorphous silicon films caused by Rapid Thermal Annealing is studied. The films annealed at 1200degreesC for 2 minutes change their structure to polycrystalline and as a result their resistivity decreases by 4 orders of magnitude. Due to the small thickness of the as deposited amorphous silicon the obtained poly-Si is strongly irregular and has many discontinuities in its texture.