Influence of the rapid thermal annealing on the properties of thin a-Si films
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2004
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Resumo |
The variation of the structure, morphology and the electrical properties of thin amorphous silicon films caused by Rapid Thermal Annealing is studied. The films annealed at 1200degreesC for 2 minutes change their structure to polycrystalline and as a result their resistivity decreases by 4 orders of magnitude. Due to the small thickness of the as deposited amorphous silicon the obtained poly-Si is strongly irregular and has many discontinuities in its texture. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Nedev, N; Beshkov, G; Fortunato, E; Georgiev, SS; Ivanov, T; Raniero, L; Zhang, SB; Martins, R .Influence of the rapid thermal annealing on the properties of thin a-Si films ,ADVANCED MATERIALS FORUM II ,2004 ,455-456(0):108-111 |
Palavras-Chave | #半导体材料 |
Tipo |
期刊论文 |