Analysis of the temperature-induced transition to current self-oscillations in doped GaAs/AlAs superlattices
Data(s) |
2001
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Resumo |
We observed the decrease of the hysteresis effect and the transition from the stable to the dynamic domain regime in doped superlattices with increasing temperature. The current-voltage characteristics and the behaviours of the domain boundary are dominated by the temperature-dependent lineshape of the electric field dependence of the drift velocity (V(F)), As the peak-valley ratio in the V(F) curve decreases with increasing temperature, the hysteresis will diminish and temporal current self-oscillations will occur. The simulated calculation, which takes the difference in V(F) curves into consideration, gives a good agreement with the experimental results. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Li CY; Sun BQ; Jiang DS; Wang JN .Analysis of the temperature-induced transition to current self-oscillations in doped GaAs/AlAs superlattices ,SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2001 ,16(4):239-242 |
Palavras-Chave | #半导体材料 #GAAS-ALAS SUPERLATTICES #ELECTRIC-FIELD DOMAINS |
Tipo |
期刊论文 |