Analysis of the temperature-induced transition to current self-oscillations in doped GaAs/AlAs superlattices


Autoria(s): Li CY; Sun BQ; Jiang DS; Wang JN
Data(s)

2001

Resumo

We observed the decrease of the hysteresis effect and the transition from the stable to the dynamic domain regime in doped superlattices with increasing temperature. The current-voltage characteristics and the behaviours of the domain boundary are dominated by the temperature-dependent lineshape of the electric field dependence of the drift velocity (V(F)), As the peak-valley ratio in the V(F) curve decreases with increasing temperature, the hysteresis will diminish and temporal current self-oscillations will occur. The simulated calculation, which takes the difference in V(F) curves into consideration, gives a good agreement with the experimental results.

Identificador

http://ir.semi.ac.cn/handle/172111/12244

http://www.irgrid.ac.cn/handle/1471x/65092

Idioma(s)

英语

Fonte

Li CY; Sun BQ; Jiang DS; Wang JN .Analysis of the temperature-induced transition to current self-oscillations in doped GaAs/AlAs superlattices ,SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2001 ,16(4):239-242

Palavras-Chave #半导体材料 #GAAS-ALAS SUPERLATTICES #ELECTRIC-FIELD DOMAINS
Tipo

期刊论文