Influence of the rapid thermal annealing on the properties of thin a-Si films
| Data(s) |
2004
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|---|---|
| Resumo |
The variation of the structure, morphology and the electrical properties of thin amorphous silicon films caused by Rapid Thermal Annealing is studied. The films annealed at 1200degreesC for 2 minutes change their structure to polycrystalline and as a result their resistivity decreases by 4 orders of magnitude. Due to the small thickness of the as deposited amorphous silicon the obtained poly-Si is strongly irregular and has many discontinuities in its texture. Portuguese Mat Soc.; Portuguese Sci Fdn.; Calouste Gulbenkian Fdn.; Luso Amer Fdn. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
TRANS TECH PUBLICATIONS LTD BRANDRAIN 6, CH-8707 ZURICH-UETIKON, SWITZERLAND |
| Fonte |
Nedev N; Beshkov G; Fortunato E; Georgiev SS; Ivanov T; Raniero L; Zhang SB; Martins R .Influence of the rapid thermal annealing on the properties of thin a-Si films .见：TRANS TECH PUBLICATIONS LTD .ADVANCED MATERIALS FORUM II, 455-456,BRANDRAIN 6, CH-8707 ZURICH-UETIKON, SWITZERLAND ,2004,108-111 |
| Palavras-Chave | #半导体材料 |
| Tipo |
会议论文 |
