Influence of the semi-insulating GaAs Schottky pad on the Schottky barrier in the active layer
| Data(s) |
1996
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|---|---|
| Resumo |
The influence of the sidegate voltage on the Schottky barrier in the ion-implanted active layer via the Schottky pad on the semi-insulating GaAs substrate was observed, and the mechanism for such an influence was proposed. (C) 1996 American Institute of Physics. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Wu J; Wang ZG; Lin LY; Han CB; Zhang M; Bai SW .Influence of the semi-insulating GaAs Schottky pad on the Schottky barrier in the active layer ,APPLIED PHYSICS LETTERS ,1996,68(18):2550-2552 |
| Palavras-Chave | #半导体材料 |
| Tipo |
期刊论文 |
