313 resultados para AlxGa1-xN


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采用p-AlGa1-xN/i-GaN/n-GaN异质结构成功制备了含铝组分分别为0.1和0.07的正照射可见盲紫外探测器,并分别测试了它们的伏安特性曲线和光电响应光谱。对于Al组分为0.1的器件,在零偏压处出现了板低的暗电流密度,表明器件具有非常高的信噪比。高分辨率X射线衍射仪对材料的测试结果表明,高铝组分(0.1)窗口层薄膜材料的晶体质量较差,导致暗电流增大,而其窗口层的窗口选择作用则可以得到较高的响应率和较宽的响应波段。

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Optical modes of AlGaInP laser diodes with real refractive index guided self-aligned (RISA) structure were analyzed theoretically on the basis of two-dimension semivectorial finite-difference methods (SV-FDMs) and the computed simulation results were presented. The eigenvalue and eigenfunction of this two-dimension waveguide were obtained and the dependence of the confinement factor and beam divergence angles in the direction of parallel and perpendicular to the pn junction on the structure parameters such as the number of quantum wells, the Al composition of the cladding layers, the ridge width, the waveguide thickness and the residual thickness of the upper P-cladding layer were investigated. The results can provide optimized structure parameters and help us design and fabricate high performance AlGaInP laser diodes with a low beam aspect ratio required for optical storage applications.

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Photoluminescence (PL) and temperature-dependent Hall effect measurements were carried out in (0001) and (11 (2) over bar0) AlGaN/GaN heterostructures grown on sapphire substrates by metalorganic chemical vapor deposition. There are strong spontaneous and piezoelectric electric fields (SPF) along the growth orientation of the (0001) AlGaN/GaN heterostructures. At the same time there are no corresponding SPF along that of the (1120) AlGaN/GaN. A strong PL peak related to the recombination between two-dimensional electron gas (2DEG) and photoexcited holes was observed at 3.258 eV at room temperature in (0001) AlGaN/GaN heterointerfaces while no corresponding PL peak was observed in (11 (2) over bar0). The existence of a 2DEG was observed in (0001) AlGaN/GaN multi-layers with a mobility saturated at 6000 cm(2)/V s below 80 K, whereas a much lower mobility was measured in (11 (2) over bar0). These results indicated that the SPF was the main element to cause the high mobility and high sheet-electron-density 2DEG in AlGaN/GaN heterostructures. (C) 2004 Elsevier B.V. All rights reserved.

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High performance uncooled 1.55 mu m InGaAsP/InP strained layer quantum well (SL-QW) lasers grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) were reported in this paper. Whole MOCVD over growth method were applied in this work. The threshold currents of 5mA and the highest lasing temperature of 122 degrees C were obtained.

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N-shaped negative differential resistance (NDR) with a high peak-to-valley ratio (PVR) is observed in a GaAs-based modulation-doped field effect transistor (MODFET) with InAs quantum dots (QDs) in the barrier layer (QDFET) compared with a GaAs MODFET. The NDR is explained as the real-space transfer (RST) of high-mobility electrons in a channel into nearby barrier layers with low mobility, and the PVR is enhanced dramatically upon inserting the QD layer. It is also revealed that the QD layer traps holes and acts as a positively charged nano-floating gate after a brief optical illumination, while it acts as a negatively charged nano-floating gate and depletes the adjacent channel when charged by the electrons. The NDR suggests a promising application in memory or high-speed logic devices for the QDFET structure.

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The generalized liquid drop model (GLDM) is extended to the region around deformed shell closure (270)Hs by taking into account the excitation energy EI+ of the residual daughter nucleus and the centrifugal potential energy V-cen(r). The branching ratios of alpha decays from the ground state of a parent nucleus to the ground state 0(+) of its deformed daughter nucleus and to the first excited state 2(+) are calculated in the framework of the GLDM. The results support the proposal that a measurement of alpha spectroscopy is a feasible method to extract information on nuclear deformation of superheavy nuclei around the deformed nucleus (270)Hs.

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The proton radioactivity half-lives of spherical proton emitters are calculated by the cluster model with the contribution of a centrifugal potential barrier considered separately. The results are compared with the experimental data and other theoretical data, and good agreement is found for most nuclei. In addition, two formulae are proposed for the proton decay half-life of spherical proton emitters through the least squares fit to the experimental data available, and could reproduce the experimental half-lives successfully.

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High-spin level structures of 94,95Mo have been reinvestigated via the 16O(82Se, xnγ)94,95Mo(x = 4, 3) reactions at E(82Se) = 460 MeV. The previously reported level schemes of these two nuclei have been largely modified up to ∼11 MeV in excitation energy due to identifications of some important linking transitions. Shellmodel calculations have been made in the model space of π(p1/2, g9/2, d5/2)4 and ν(d5/2, s1/2, d3/2, g7/2, h11/2)2(3) and compared with the modified level schemes. The structures of the newly assigned high-spin states in 94,95Mo have been discussed.

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The generalized liquid drop model (GLDM) and the cluster model have been employed to calculate the alpha-decay half-lives of superheavy nuclei (SHN) using the experimental alpha-decay Q values. The results of the cluster model are slightly poorer than those from the GLDM if experimental Q values are used. The prediction powers of these two models with theoretical Q values from Audi et al. (Q(Audi)) and Muntian et al. (Q(M)) have been tested to find that the cluster model with Q(Audi) and Q(M) could provide reliable results for Z > 112 but the GLDM with Q(Audi) for Z <= 112. The half-lives of some still unknown nuclei are predicted by these two models and these results may be useful for future experimental assignment and identification.

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A method of loop-mediated isothermal amplification (LAMP) was employed to develop a rapid and simple detection system for porcine circovirus type 2 (PCV2). The amplification could be finished in 60 min under isothermal condition at 64 degrees C by employing a set of four primers targeting the cap gene of PCV2. The LAMP assay showed higher sensitivity than the conventional PCR, with a detection limit of five copies per tube of purified PCV2 genomic DNA. No cross-reactivity was observed from the samples of other related viruses including porcine circovirus type 1 (PCV1), porcine parvovirus (PPV), porcine pseudorabies virus (PRV) and porcine reproductive and respiratory syndrome virus (PRRSV). The detection rate of PCV2 LAMP for 86 clinical samples was 96.5% and appeared greater than that of the PCR method. The LAMP assay reported can provide a rapid yet simple test of PCV2 suitable for laboratory diagnosis and pen-side detection due to ease of operation and the requirement of only a regular water bath or heat block for the reaction. (c) 2008 Elsevier B.V. All rights reserved.

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The barrier distribution function method is introduced in the dinuclear system model in the calculation of the transmission probability, which is the first stage in the synthesis of superheavy nuclei. Dynamical deformation and averaging collision orientations are considered in the calculation of the fusion probability by solving master equation numerically. Survival probability with respect to xn evaporation channel (x = 1-5) in the de-excitation process of the thermal compound nucleus is calculated, in which the level density of the Fermi-gas model is used. Production cross sections of a series of superheavy nuclei formed in the reactions taken magic and deformed nuclei as target in Ca-48 induced reactions are studied systematically. The calculated results are in good agreement with available experimental data. Isotopic dependence of the production cross sections in the reactions Ca-48 + Pu is analyzed.

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By use of optical spectrum technology, the spectra of X-ray induced by highly charged Ar-40(q+) ions interacting with Au surface have been studied. The results show that the argon K alpha X-ray were emitted from the hollow atoms formed below the surface. There is a process of multi-electron exciting in neutralization of the Ar16+ ion, with electronic configuration 1s(2) in its ground state below the solid surface. The yield of the projectile K alpha X-ray is related to its initial electronic configuration, and the yield of the target X-ray is related to the projectile kinetic energy.