INTERFACE ROUGHNESS SCATTERING IN GAAS-ALGAAS MODULATION-DOPED HETEROSTRUCTURES

Autoria(s): YANG B; CHENG YH; WANG ZG; LIANG JB; LIAO QW; LIN LY; ZHU ZP; XU B; LI W
Data(s)

1994
Identificador

http://ir.semi.ac.cn/handle/172111/15611

http://www.irgrid.ac.cn/handle/1471x/101844
Idioma(s)

英语
Fonte

YANG B; CHENG YH; WANG ZG; LIANG JB; LIAO QW; LIN LY; ZHU ZP; XU B; LI W .INTERFACE ROUGHNESS SCATTERING IN GAAS-ALGAAS MODULATION-DOPED HETEROSTRUCTURES ,APPLIED PHYSICS LETTERS ,1994,65(26):3329-3331
Palavras-Chave #半导体材料 #GAAS/ALXGA1-XAS HETEROJUNCTION #ELECTRON-MOBILITY #QUANTUM WELLS
Tipo

期刊论文
Acesso ao item digital