Electrical properties and electroluminescence of 4H-SiC p-n junction diodes

Homoepitaxial growth of 4H-SiC on off-oriented Si-face(0001) substrates was performed by using the step-controlled epitaxy technique in a newly developed low-pressure hot-wall CVD (LP-HWCVD) system with a horizontal air-cooled quartz tube at around 1500 degreesC and 1.33 x 10(4) Pa by employing SiH4 + C2H4 + H-2. In-situ doping during growth was carried out by adding NH3 gas into the precursor gases. It was shown that the maximum Hall mobility of the undoped 4H-SiC epilayers at room temperature is about 430 cm(2) (.) V-1 (.) s(-1) with a carrier concentration of similar to 10(16) cm(-3) and the highest carrier concentration of the N-doped 4H-SiC epilayer obtained at NH3 flow rate of 3 sccm is about 2.7 x 10(21) cm(-3) with a mobility of 0.75 cm(2) (.) V-1 (.) s(-1). SiC p-n junctions were obtained by epitaxially growing N-doped 4H-SiC epilayers on Al-doped 4H-SiC substrates. The C - V characteristics of the diodes were linear in the 1/C-3 - V coordinates indicating that the obtained p-n junctions were graded with a built-in voltage of 2.7 eV. The room temperature electroluminescence spectra of 4H-SiC p-n junctions are studied as a function of forward current. The D-A pair recombination due to nitrogen donors and the unintentional, deep boron center is dominant at low forward bias, while the D-A pair recombination due to nitrogen donors and aluminum acceptors are dominant at higher forward biases. The p-n junctions could operate at temperature of up to 400 degreesC, which provides a potential for high-temperature applications.

Growth of ZnO single crystal by chemical vapor transport method

ZnO crystals were grown by CVT method in closed quartz tube under seeded condition. Carbon was used as a transport agent to enhance the chemical transport of ZnO in the growth process. ZnO single crystals were grown by using GaN/sapphire and GaN/Si wafer as seeds. The property and crystal quality of the ZnO single crystals was studied by photoluminescence spectroscopy and X-ray diffraction technique.

Study on surface morphology of GaN growth by MOCVD on GaN/Si(111) template

The surface morphology of GaN grown by MOCVD on GaN/Si template was studied. Rough morphology and deep pinhole defects on some surface areas of the samples were observed and studied. The formation of rough morphology is possibly related to Ga-Si alloy produced due to poor thermal stability of template at high temperature. The deep pinhole defects generated are deep down to the surface of MBE-grown GaN/Si template. The stress originated from the large thermal expansion coefficient difference between GaN and Si may be related to the formation of the pinhole defects. The surface morphology of the GaN can be improved by optimizing the GaN/Si template and decreasing the growth temperature.

Growth and characterization of semi-insulating GaN films grown by MOCVD

High resistivity unintentionally doped GaN films were grown on (0001) sapphire substrates by metalorganic chemical vapor deposition. The surface morphology of the layer was measured by both atomic force microscopy and scanning electron microscopy. The results show that the films have mirror-like surface morphology with root mean square of 0.3 nm. The full width at half maximum of double crystal X-ray diffraction rocking curve for (0002) GaN is about 5.22 arc-min, indicative of high crystal quality. The resistivity of the GaN epilayers at room temperature and at 250 degrees C was measured to be approximate 10(9) and 10(6) Omega(.)cm respectively, by variable temperature Hall measurement. Deep level traps in the GaN epilayers were investigated by thermally stimulated current and resistivity measurements.

Growth of high quality semi-insulating InP single crystal by suppression of compensation defects

Deep level defects in as-grown and annealed SI-InP samples were investigated by thermally stimulated current spectroscopy. Correlations between electrical property, compensation ratio, thermal stability and deep defect concentration in SI-InP were revealed. An optimized crystal growth condition for high quality SI-InP was demonstrated based on the experimental results.

Enhancement of 1.53 mu m photoluminescence from spin-coated Er-Si-O (Er2SiO5) crystalline films by nitrogen plasma treatment

Er-Si-O (Er2SiO5) crystalline films are fabricated by the spin-coating and subsequent annealing process. The fraction of erbium is estimated to be 21.5 at% based on Rutherford backscattering measurement. X-ray diffraction pattern indicates that the Er-Si-O films are similar to Er2SiO5 compound in the crystal structure. The fine structure of room-temperature photoluminescence of Er3+-related transitions suggests that Er has a local environment similar to the Er-O-6 octahedron. Our preliminary results show that the intensity of 1.53 mu m emission is enhanced by a factor of seven after nitrogen plasma treatment by NH3 gas with subsequent post-annealing. The full-width at half-maximum of 1.53 pm emission peak increases from 7.5 to 12.9 nm compared with that of the untreated one. Nitrogen plasma treatment is assumed to tailor Er3+ local environment, increasing the oscillator strength of transitions and thus the excitation/emission cross-section. (c) 2005 Elsevier B.V. All rights reserved.

In-situ synthesis of AlN powders and composite AlN powders with yttrium addition

Using Al-Mg and Al-Mg-Y alloys as raw materials and nitrogen as gas reactants, AIN powders and composite AIN powders by in-situ synthesis method were prepared. AIN lumps prepared by the nitriding of Al-Mg and Al-Mg-Y alloys have porous microstructure, which is favorable for pulverization. They have high purity, containing 1.23 % (mass fraction) oxygen impurity, and consisted of AIN single phase . The average particle size of AIN powders is 6.78 mum. Composite AlN powders consist of AlN phases and rare, earth oxide Y2O3 phase. The distribution of particle size of AIN powders shows two peaks. In view, of packing factor, AIN powders with such size distribution can easily be sintered to high density.

Growth of ZnO single crystal by chemical vapor transport method

ZnO crystals were grown by CVT method in closed quartz tube under seeded condition. Carbon was used as a transport agent to enhance the chemical transport of ZnO in the growth process. ZnO single crystals were grown by using GaN/sapphire and GaN/Si wafer as seeds. The property and crystal quality of the ZnO single crystals was studied by photoluminescence spectroscopy and X-ray diffraction technique.

Study on surface morphology of GaN growth by MOCVD on GaN/Si(111) template

The surface morphology of GaN grown by MOCVD on GaN/Si template was studied. Rough morphology and deep pinhole defects on some surface areas of the samples were observed and studied. The formation of rough morphology is possibly related to Ga-Si alloy produced due to poor thermal stability of template at high temperature. The deep pinhole defects generated are deep down to the surface of MBE-grown GaN/Si template. The stress originated from the large thermal expansion coefficient difference between GaN and Si may be related to the formation of the pinhole defects. The surface morphology of the GaN can be improved by optimizing the GaN/Si template and decreasing the growth temperature.

Growth and characterization of semi-insulating GaN films grown by MOCVD

High resistivity unintentionally doped GaN films were grown on (0001) sapphire substrates by metalorganic chemical vapor deposition. The surface morphology of the layer was measured by both atomic force microscopy and scanning electron microscopy. The results show that the films have mirror-like surface morphology with root mean square of 0.3 nm. The full width at half maximum of double crystal X-ray diffraction rocking curve for (0002) GaN is about 5.22 arc-min, indicative of high crystal quality. The resistivity of the GaN epilayers at room temperature and at 250 degrees C was measured to be approximate 10(9) and 10(6) Omega(.)cm respectively, by variable temperature Hall measurement. Deep level traps in the GaN epilayers were investigated by thermally stimulated current and resistivity measurements.

Growth of high quality semi-insulating InP single crystal by suppression of compensation defects

Deep level defects in as-grown and annealed SI-InP samples were investigated by thermally stimulated current spectroscopy. Correlations between electrical property, compensation ratio, thermal stability and deep defect concentration in SI-InP were revealed. An optimized crystal growth condition for high quality SI-InP was demonstrated based on the experimental results.

杯芳烃羧酸萃取稀土、钍与含杯配合物结构研究

本文以大环化合物杯芳烃羧酸为萃取体系，系统考察稀土元素在该体系中的萃取分离性能，比较了钍与稀土元素的萃取性质差异，从而为杯芳烃羧酸在该分离领域中的应用提供一定的实验数据，此外，采用无机水热合成制备了含杯[8]芳烃的三元超分子配位聚合物并表征其结构，具体研究内容如下： 1、 合成杯芳烃并进行化学修饰得萃取剂杯芳烃羧酸，采用熔点测定、元素分析、TG-DTA、FT-IR和1H-NMR等分析方法表征，并利用两相滴定法测定了杯芳烃羧酸的基本常数。 2、 研究杯芳烃羧酸-CHCl3/RE-HCl萃取体系碱金属离子、离子强度、酸度、温度和萃取剂浓度对Eu(III)的萃取分配比影响，并分析其萃取机理。在此基础上，探索杯芳烃羧酸的协同萃取性能，发现杯[4]芳烃羧酸与伯胺N1923的ABC酸碱耦合协萃体系对轻、中、重稀土有不同的协萃能力，协萃系数与原子序数呈“双峰效应”。 3、 在萃取热力学基础上，利用层流恒界面池研究杯[4]芳烃羧酸萃取Nd(III)的动力学性质，确定了萃取反应控制模式随条件不同有所变化，化学反应在相界面上进行，并获得了萃取反应速率方程。 4、 以杯芳烃羧酸-CHCl3/Th-HCl体系研究钍的萃取性能，考察了碱金属离子、离子强度、酸度、温度和萃取剂浓度对Th(IV)的萃取影响，比较其与稀土萃取性能的差异，并在此基础上进一步研究与伯胺N1923协同萃取钍的性能，分析了协同萃取反应机制。 5、 水热合成并表征了含磺化杯[8]芳烃，2，2’-联吡啶与镍的三元超分子配合物。磺化杯[8]在该配合物中呈“双-反向锥式”构型，分子间由氢键和C-H…π相互作用将四核Ni簇连接成三维超分子结构。

Cyanex923萃取稀土热力学、动力学及界面现象的研究

本文研究了中性萃取剂三烷基氧化膦(Cyanex 923)从硫酸介质中萃取与反萃三价稀土Yb(III)的热力学和动力学机理，对该萃取剂的界面活性进行了深入的研究，并详细探讨了其从硫酸介质中萃取Ce(IV)时液/液界面的吸附参数及萃合物的聚集。此外，还考察了一种羧酸类萃取剂仲辛基苯氧基取代乙酸(CA-12)所组成的萃取有机相中W/O微乳液的热力学稳定性与结构参数。 1. 研究了Cyanex 923从硫酸介质中萃取与反萃Yb(III)的热力学。考察了一些影响萃取与反萃的条件，如：酸度、盐析剂、温度、反萃剂种类等，得出了萃取机理与热力学函数，为分离Yb(III)与其它稀土元素提供了有用的参数。 2. 研究了Cyanex 923 从硫酸体系中萃取Yb(III)的动力学，通过考察搅拌强度、比界面积、温度、反应物浓度等各种因素对萃取速率的影响，确定其对Yb(III) 的萃取动力学为扩散控制过程，反应主要在液/液界面进行，控制步骤为反应物种通过界面凝滞膜的界面扩散过程，并推导出了萃取速率经验式。 3. 考察了温度、离子强度、酸度、添加剂和不同稀释剂对萃取剂Cyanex 923在Cyanex 923-稀释剂/Na2SO4-H2SO4界面的界面活性的影响，得到了Cyanex 923在不同条件下的界面吸附参数，对萃取剂界面活性与萃取动力学的关系进行了讨论。 4.考察了Cyanex 923-正庚烷/Ce(IV)-H2SO4 萃取体系在液/液界面的吸附参数，重点研究了体系的界面活性物种、萃合物聚集造成的界面现象及其对溶剂萃取过程的影响，详细地研究了Ce(IV)和H2SO4的萃取对萃取体系一些物化性质的影响,观测到了萃取体系中反胶束的存在。 5. 研究了皂化CA-12—添加剂组成的萃取有机相中W/O微乳液的热力学稳定性，考察了皂化率、电解质本性与浓度、pH值、温度对体系最大加溶水量的的影响，并考查了不同添加剂与含水量时微乳液形成的热力学函数及结构参数。