Growth and characterization of semi-insulating GaN films grown by MOCVD

High resistivity unintentionally doped GaN films were grown on (0001) sapphire substrates by metalorganic chemical vapor deposition. The surface morphology of the layer was measured by both atomic force microscopy and scanning electron microscopy. The results show that the films have mirror-like surface morphology with root mean square of 0.3 nm. The full width at half maximum of double crystal X-ray diffraction rocking curve for (0002) GaN is about 5.22 arc-min, indicative of high crystal quality. The resistivity of the GaN epilayers at room temperature and at 250 degrees C was measured to be approximate 10(9) and 10(6) Omega(.)cm respectively, by variable temperature Hall measurement. Deep level traps in the GaN epilayers were investigated by thermally stimulated current and resistivity measurements.

High resistivity unintentionally doped GaN films were grown on (0001) sapphire substrates by metalorganic chemical vapor deposition. The surface morphology of the layer was measured by both atomic force microscopy and scanning electron microscopy. The results show that the films have mirror-like surface morphology with root mean square of 0.3 nm. The full width at half maximum of double crystal X-ray diffraction rocking curve for (0002) GaN is about 5.22 arc-min, indicative of high crystal quality. The resistivity of the GaN epilayers at room temperature and at 250 degrees C was measured to be approximate 10(9) and 10(6) Omega(.)cm respectively, by variable temperature Hall measurement. Deep level traps in the GaN epilayers were investigated by thermally stimulated current and resistivity measurements.

zhangdi于2010-03-29批量导入

zhangdi于2010-03-29批量导入

Chinese Assoc Crystal Growth.; Crystal Mat Shandong Univ, State Key Lab.; CAS, Tech Inst Phys & Chem.; Res Inst Synthet Crystal.; Japanese Soc Promot Sci, 161 Comm.

Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China

Chinese Assoc Crystal Growth.; Crystal Mat Shandong Univ, State Key Lab.; CAS, Tech Inst Phys & Chem.; Res Inst Synthet Crystal.; Japanese Soc Promot Sci, 161 Comm.