Study on surface morphology of GaN growth by MOCVD on GaN/Si(111) template

The surface morphology of GaN grown by MOCVD on GaN/Si template was studied. Rough morphology and deep pinhole defects on some surface areas of the samples were observed and studied. The formation of rough morphology is possibly related to Ga-Si alloy produced due to poor thermal stability of template at high temperature. The deep pinhole defects generated are deep down to the surface of MBE-grown GaN/Si template. The stress originated from the large thermal expansion coefficient difference between GaN and Si may be related to the formation of the pinhole defects. The surface morphology of the GaN can be improved by optimizing the GaN/Si template and decreasing the growth temperature.

The surface morphology of GaN grown by MOCVD on GaN/Si template was studied. Rough morphology and deep pinhole defects on some surface areas of the samples were observed and studied. The formation of rough morphology is possibly related to Ga-Si alloy produced due to poor thermal stability of template at high temperature. The deep pinhole defects generated are deep down to the surface of MBE-grown GaN/Si template. The stress originated from the large thermal expansion coefficient difference between GaN and Si may be related to the formation of the pinhole defects. The surface morphology of the GaN can be improved by optimizing the GaN/Si template and decreasing the growth temperature.

zhangdi于2010-03-29批量导入

zhangdi于2010-03-29批量导入

Chinese Assoc Crystal Growth.; Crystal Mat Shandong Univ, State Key Lab.; CAS, Tech Inst Phys & Chem.; Res Inst Synthet Crystal.; Japanese Soc Promot Sci, 161 Comm.

Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China

Chinese Assoc Crystal Growth.; Crystal Mat Shandong Univ, State Key Lab.; CAS, Tech Inst Phys & Chem.; Res Inst Synthet Crystal.; Japanese Soc Promot Sci, 161 Comm.