Growth of high quality semi-insulating InP single crystal by suppression of compensation defects
| Data(s) |
2006
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|---|---|
| Resumo |
Deep level defects in as-grown and annealed SI-InP samples were investigated by thermally stimulated current spectroscopy. Correlations between electrical property, compensation ratio, thermal stability and deep defect concentration in SI-InP were revealed. An optimized crystal growth condition for high quality SI-InP was demonstrated based on the experimental results. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Zhao YW; Dong ZY; Duan ML; Sun WR; Yang ZX .Growth of high quality semi-insulating InP single crystal by suppression of compensation defects ,JOURNAL OF RARE EARTHS,2006,24(Sp.Iss.SI ):75-77 |
| Palavras-Chave | #半导体材料 #indium phosphide #defect #semi-insualting #STIMULATED CURRENT SPECTROSCOPY #CURRENT TRANSIENT SPECTROSCOPY #SEMI-INSULATING INP #DEEP-LEVEL DEFECTS #FE |
| Tipo |
期刊论文 |
