InN layers grown by MOCVD on SrTiO3 substrates

Epitaxial wurtzite InN thin films have been grown by metal-organic chemical vapor deposition on (1 1 1) SrTiO3 (STO) substrates. Interestingly, twin domain epitaxy induced by the surface reconstruction of STO is observed with the in-plane orientation relationships of [(1) over bar 1 0 0]InN parallel to [<(1)over bar > 1 0]STO and [2 <(1 1)over bar > 0]InN parallel to[<(1)over bar > 1 0]STO, which is helpful to release the strain. The InN films on STO substrates exhibit a strong photoluminescence emission around 0.78 eV. Particularly, using STO substrates opens up a possibility to integrate InN with the functional oxides. (C) 2009 Elsevier B.V. All rights reserved

ZnO 材料的MOCVD 生长研究

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-07T05:45:44Z No. of bitstreams: 1 王振华-ZnO材料的MOCVD生长研究.pdf: 1940715 bytes, checksum: 24795c3f40c326b4bbc7fa587639975e (MD5)

ZnMgO合金材料的MOCVD生长及物性研究

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SrTiO3衬底上MOCVD生长ZnO和InN薄膜

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InGaN薄膜材料的MOCVD生长及物性研究

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