Growth and characterization of GaxIn1-xAs1-ySby epitaxial layers grown by LP-MOCVD


Autoria(s): Jingwei Wang; Yiding Wang; Tao Wang; Shuren Yang; Xiaoting Li; Jingzhi Yin; Xiaofeng Sai; SaiHongkai Gao
Data(s)

2006

Identificador

http://ir.opt.ac.cn/handle/181661/8046

http://www.irgrid.ac.cn/handle/1471x/71001

Idioma(s)

英语

Fonte

Jingwei Wang, Yiding Wang, Tao Wang, Shuren Yang.Growth and characterization of GaxIn1-xAs1-ySby epitaxial layers grown by LP-MOCVD.Proc. SPIE ,2006,6029(2):602912-1~6029126

Palavras-Chave #电子、电信技术::半导体材料 #LP-MOCVD #mismatched #GaInAsSb #surface morphology
Tipo

会议论文