LP-MOCVD growth and characterisation of InAsSb ternary

Autoria(s): Li XT(李晓婷)
Data(s)

2005
Identificador

http://ir.opt.ac.cn/handle/181661/5652

http://www.irgrid.ac.cn/handle/1471x/73308
Idioma(s)

英语
Direitos

1
Fonte

李晓婷.LP-MOCVD growth and characterisation of InAsSb ternary,Chinese Journal of Semiconductors,2005,26(12):45-49
Palavras-Chave #半导体技术
Tipo

期刊论文
Acesso ao item digital