a-SiCx∶H和β-SiC中Er缺陷结构及其1.54μm发光探索

材料科学开放实验室基金,光学信息技术科学教育部开放实验室基金

掺Er凝胶玻璃中Er离子发光性质的研究

用溶胶－凝胶方法合成了掺铒（掺杂浓度10~20/cm~3）的二氧化硅玻璃。在室温下可产生1.45μm波长的红外荧光。实验结果表明

稀土（Er）和氧（O）双掺杂GaAs和Si的高效发光的研究

用光致发光谱(PL)、傅里叶变换红外吸收谱(FTIR)和X射线衍射谱(XRD)等研究了稀土(Er)和氧(O)双离子注入GaAs和Si的发光特性和高效发光机理。测量并分析了该材料的FTIR和XRD谱;对该材料的高效发光机制作了较深入地探讨和澄清。

Crystal-Field Symmetry of Luminescence Center in Er-Implanted Silicon

于2010-11-23批量导入

Er离子在Inp、GaAs和Si中的1.54μm特征发光峰

分别在InP、GaAs和Si中以7×10＜′14＞和1×10＜′15＞cm＜′－2＞的剂量进行Er离子注入, 并采用闭管、快速和炉退火等热处理。低温光致发光（PL）、反射式高等电子衍射和卢瑟福背散射实验研究表明, 上述样品中Er＜′3＋＞离子特征发光的中心波长均出现在1．5μm处, 其中InP的发光峰最强, 而注入损伤的恢复是影响Er＜′3＋＞发光的重要因素之一。卢瑟福背散射分析进一步证实退火后Er原子在Si中向表面迁移, 而在InP中的外扩散较小, 并比较了Er在InP和Si晶格中的占位情况。图7参12

Er~+注入单晶硅中非晶层晶化过程的TEM研究

于2010-11-23批量导入

The influence of oxygen content on photoluminescence from Er-doped SiOx

SiOx films with oxygen concentrations ranging 13-46 at.% were deposited by plasma enhanced chemical vapor deposition (PECVD) technique using: pure SiH4 and N2O mixture. Erbium was then implanted at an energy of 500 KeV with dose of 2x10(15) ions/cm(2). The samples were subsequently annealed in N-2 for 20 sec at temperatures of (300-950 degrees C). Room temperature (RT) photo-luminescence (PL) data were collected by Fourier Transform Infrared Spectroscopy (FTIS) with an argon laser at a wavelength of 514.5 nm and an output power from 5 to 2500 mw. The intense room-temperature luminescence was observed around 1.54 mu m. The luminescence intensity increases by 2 orders of magnitude as compared with that of Er-doped Czochralski (CZ) Si. We found that the Er3+ luminescence depends strongly on the SiOx microstructure. Our experiment also showed that the silicon grain radius decreased with increasing oxygen content and finally formed micro-crystalline silicon or nano-crystalline silicon. As a result, these silicon small particles could facilitate the energy transfer to Er3+ and thus enhanced the photoluminescence intensity.

Study of infrared luminescence from Er-implanted GaN films

In this study, we report the dependences of infrared luminescence properties of Er-implanted GaN thin films (GaN:Er) on the kinds of substrates used to grow GaN, the growth techniques of GaN, the implantation parameters and annealing procedures. The experimental results showed that the photoluminescence (PL) intensity at 1.54 mum was severely influenced by different kinds of substrates. The integrated PL peak intensity from GaN:Er /Al2O3 (00001) was three and five times stronger than that from GaN:Er /Si (111) grown by molecular beam epitaxy (MBE) and by metalorganic chemical vapor deposition (MOCVD), respectively. The PL spectra observed from GaN:Er/Al2O3 (0001) grown by MOCVD and by MBE displayed a similar feature, but those samples grown by MOCVD exhibited a stronger 1.54 mum PL. It was also found that there was a strong correlation between the PL intensity with ion implantation parameters and annealing procedures. Ion implantation induced damage in host material could be only partly recovered by an appropriate annealing temperature procedure. The thermal quenching of PL from 15 to 300 K was also estimated. In comparison with the integrated PL intensity at 15 K, it is reduced by only about 30 % when going up to 300 K for GaN:Er/Al2O3 sample grown by MOCVD. Our results also show that the strongest PL intensity comes from GaN:Er grown on Al2O3 substrate by MOCVD. (C) 2004 Elsevier B.V. All rights reserved.

Correlation between Er3+ emission and the microstructure of a-SiOx : H < Er > films

Photoluminescence (PL) from Er-implanted hydrogenated amorphous silicon suboxide (a-SiOX:H<Er>(x<2.0)) films was measured. Two luminescence bands with maxima at lambda congruent to 750 nm and lambda congruent to 1.54mum, ascribed to the a-SiOX:H intrinsic emission and Er3+ emission, were observed. Peak intensities of the two bands follow the same trend as a function of annealing temperature from 300 to 1000degreesC. Micro-Raman results indicate that the a-SiOX:H<Er> films are a mixture of two phases, an amorphous SiOX matrix and amorphous silicon (a-Si) domains embedded there in. FTIR spectra confirm that hydrogen effusion from a-SiOX:H<Er> films occurs during annealing. Hydrogen effusion leads to a reconstruction of the microstructure of a-Si domains, thus having a strong influence on Er3+ emission. Our study emphasizes the role of a-Si domains on Er3+ emission in a-SiOX:H<Er> films.

System size dependence of associated yields in hadron-triggered jets STAR Collaboration

We present results on the system size dependence of high transverse momentum di-hadron correlations at root s(NN) = 200 GeV as measured by STAR at RHIC. Measurements in d + Au, Cu + Cu and Au + Au collisions reveal similar jet-like near-side correlation yields (correlations at small angular separation Delta phi similar to 0, Delta eta similar to 0) for all systems and centralities. Previous measurements have shown Chat the away-side (Delta phi similar to pi) yield is suppressed in heavy-ion collisions. We present measurements of the away-side Suppression as a function of transverse momentum and centrality in Cu + Cu and Au + Au collisions. The suppression is found to be similar in Cu + Cu and An + An collisions at a similar number of participants. The results are compared to theoretical calculations based on the patron quenching model and the modified fragmentation model. The observed differences between data and theory indicate that the correlated yields presented here will further constrain dynamic energy loss models and provide information about the dynamic density profile in heavy-ion collisions. (C) 2009 Elsevier B.V. All rights reserved.

Experimental study of the beta-delayed proton decays of Er-145,Er-147

The beta-delayed proton decays of Er-145,Er-147 have been studied experimentally using the Ni-58 + Mo-92 reaction at beam energy of 383 MeV. On the basis of a He-jet apparatus coupled with a tape transport system, the beta-delayed proton radioactivities both from the nu s(1/2) ground state and the nu h(11/2) isomer in Er-145,Er-147 were observed by proton-gamma coincidence measurements. By analyzing the time distributions of the 4(+) -> 2(gamma)(+) transitions in the granddaughter nuclei Dy-144,Dy-146, the half-lives of 1.0 +/- 0.3 s and 1.6 +/- 0.2 s have been deduced for the nu h(11/2) isomers in Er-145,Er-147, respectively.

Properties of the beta-Delayed Proton Decay of Er-147

The beta-delayed proton decay of Er-147 is studied experimentally using the Ni-58+Mo-92 reaction at a beam energy of 383 MeV. Based on a He-jet apparatus coupled with a tape transport system, the beta-delayed proton radioactivities both from the nu s(1/2) ground state and the nu h(11/2) isomer in Er-147 are identified by proton-gamma coincidence measurements. By analyzing the time distribution of the 4(+) -> 2(+) gamma transition in the grand-daughter nucleus Dy-146, a half-life of 1.6 +/- 0.2 s is determined for the nu h(11/2) isomer in Er-147. The half-life for the ground state of Er-147 is estimated to be 3.2 +/- 1.2 s.

~(145)Er的β延发质子衰变性质研究；Properties of β-delayed Proton Decay of ~(145)Er

通过92Mo(58Ni,2p3n)熔合蒸发反应生成了非常缺中子核145Er。利用氦喷嘴带传输系统把研究目标核传输到低本底测量站,进行了质子-γ符合测量,得到了不受同量异位素干扰的145Er的β延发质子谱。经过仔细分析与延发质子符合的γ谱,发现了145Er的11/2-同核异能态具有β延发质子衰变性质。经拟合退激144Dy不同激发态γ跃迁的衰变曲线,得出145Er的1/2+基态和11/2-同核异能态的半衰期分别为(1.6±0.6)和(0.6±0.1)s。最后,简单介绍了中重质量区缺中子新核素的合成及衰变研究计划。

放射性核素引起反应中同位素分布的同位旋效应及19Na产生截面的ya���究

本论文介绍了放射性核束物理研究的现状以及当前常用的几种同位旋相关的重离子微观输运理论，对传统的 Boltzmann-Langevin 方程（BLE）考虑了同位旋相关的平均场、核子-核子碰撞截面和泡里阻塞，面且在初始化相空间的抽样中区分了中子和质子，并合模型也考虑了同位旋效应，建立了同位旋相关的 Boltzmann-Langevin 方程（IBLE）。利用IBLE对放射性核引起反应中的同位素分布，~(19)Na 的产生截面，以及中能重离子碰撞中的径向膨胀流进行了系统的研究，并对超重核的合成进行了一些初步的讨论。利用 IBLE 分别研究了不同弹核 ~(14)O，~(16)O 和 ~(18)O 在入射能量为 28.7MeV/u 下轰击不同靶核~7Be 和 ~9Be的反应，计算生成碎片的产生截面，发现用丰中子（缺中子）炮弹或丰中子（缺中子）靶进行反应，所得到的产物均有丰中子（缺中子）的碎片出现。同位素分布宽度和峰位入射体系密切相关，产生碎片的电荷数越接近于入射弹核的电荷数，则同位素分布的宽度越大，峰位偏离β稳定线值越远，其同位旋效应越明显。在28.7 MeV/u入射能量下，对反应系统 ~(17-20,22)Ne + ~(12)C 和 ~(20)Ne + ~9 进行了研究。对核素 ~(19)Na 产生截面进行计算和比较后，发现缺中子核引起的反应，具有更大~(19)Na的产生截面。通过研究反应系统 ~(40)Ca + ~(58)Ni 和 ~(40)Ca + ~(58)Fe 的径向膨胀流随入射能量的变化关系，发现径向膨胀流存在着强烈的同位旋相关性。利用径向膨胀流随入射能量的变化关系和拟和结果，从理论上证实了存在使径向膨胀流为零的特定入射能量，发现对于不同的反应体系这个能量是不同的，它随同位旋自由度的变化而变化。

~(153)Er, ~(157)Yb(EC+#beta#~+)衰变纲图的首次建立

用蒸发中子反应产生~(157)Tb和~(153)Er，收集活性样品，作x, #gamma# 单谱及符合谱测量，对~(157)Yb和~(153)Er的(EC+#beta#~+)衰变进行了研究，给出了~(157)Yb及~(153)Er的衰变纲图，其中~(157)Yb的衰变纲图包括25条新#gamma#射线，分析~(157)Yb的衰变纲图，~(153)Er的衰变纲图包括15条#gamma#射线，并指定出~(153)Er半衰变期值，该值与文献给出值符合得很好。指定了~(153)Er的衰变纲图中能级状况