Correlation between Er3+ emission and the microstructure of a-SiOx : H < Er > films
Data(s) |
2002
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Resumo |
Photoluminescence (PL) from Er-implanted hydrogenated amorphous silicon suboxide (a-SiOX:H<Er>(x<2.0)) films was measured. Two luminescence bands with maxima at lambda congruent to 750 nm and lambda congruent to 1.54mum, ascribed to the a-SiOX:H intrinsic emission and Er3+ emission, were observed. Peak intensities of the two bands follow the same trend as a function of annealing temperature from 300 to 1000degreesC. Micro-Raman results indicate that the a-SiOX:H<Er> films are a mixture of two phases, an amorphous SiOX matrix and amorphous silicon (a-Si) domains embedded there in. FTIR spectra confirm that hydrogen effusion from a-SiOX:H<Er> films occurs during annealing. Hydrogen effusion leads to a reconstruction of the microstructure of a-Si domains, thus having a strong influence on Er3+ emission. Our study emphasizes the role of a-Si domains on Er3+ emission in a-SiOX:H<Er> films. Photoluminescence (PL) from Er-implanted hydrogenated amorphous silicon suboxide (a-SiOX:H<Er>(x<2.0)) films was measured. Two luminescence bands with maxima at lambda congruent to 750 nm and lambda congruent to 1.54mum, ascribed to the a-SiOX:H intrinsic emission and Er3+ emission, were observed. Peak intensities of the two bands follow the same trend as a function of annealing temperature from 300 to 1000degreesC. Micro-Raman results indicate that the a-SiOX:H<Er> films are a mixture of two phases, an amorphous SiOX matrix and amorphous silicon (a-Si) domains embedded there in. FTIR spectra confirm that hydrogen effusion from a-SiOX:H<Er> films occurs during annealing. Hydrogen effusion leads to a reconstruction of the microstructure of a-Si domains, thus having a strong influence on Er3+ emission. Our study emphasizes the role of a-Si domains on Er3+ emission in a-SiOX:H<Er> films. 于2010-11-15批量导入 zhangdi于2010-11-15 17:02:08导入数据到SEMI-IR的IR Made available in DSpace on 2010-11-15T09:02:08Z (GMT). No. of bitstreams: 1 2829.pdf: 744167 bytes, checksum: 89cbd356eb995a3d9cb7a7b3fd727f32 (MD5) Previous issue date: 2002 Chinese Mat Res Soc.; Minist Sci & Technol China.; Natl Nat Sci Fdn China.; China Assoc Sci & Technol.; Chinese Acad Sci.; Chinese Acad Engn.; Govt Shaanxi Province & Xian City.; China Electr Mat Assoc. Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China Chinese Mat Res Soc.; Minist Sci & Technol China.; Natl Nat Sci Fdn China.; China Assoc Sci & Technol.; Chinese Acad Sci.; Chinese Acad Engn.; Govt Shaanxi Province & Xian City.; China Electr Mat Assoc. |
Identificador | |
Idioma(s) |
英语 |
Publicador |
WORLD SCIENTIFIC PUBL CO PTE LTD JOURNAL DEPT PO BOX 128 FARRER ROAD, SINGAPORE 912805, SINGAPORE |
Fonte |
Chen CY; Chen WD; Song SF; Hsu CC .Correlation between Er3+ emission and the microstructure of a-SiOx : H < Er > films .见:WORLD SCIENTIFIC PUBL CO PTE LTD .INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29),JOURNAL DEPT PO BOX 128 FARRER ROAD, SINGAPORE 912805, SINGAPORE ,2002,4246-4249 |
Palavras-Chave | #半导体材料 #HYDROGENATED AMORPHOUS-SILICON #PHOTOLUMINESCENCE #LUMINESCENCE #INTENSITY #SYSTEM |
Tipo |
会议论文 |