Pi-shaped MEMS architecture for lowering actuation voltage of RF switching

A wide band low actuation capacitive coupling electrostatic RF MEMS switching device is presented in this paper. The device includes a pi-shaped matching architecture containing two switches connected by a high impedance short transmission line. The device can act as a switch for any desired frequency whilst requiring only 12volts for actuation. By optimizing the length and the characteristic impedance of the transmission line, the switch can be tailored for desired frequency bands. The switch is calculated and simulated for Ka to V frequency bands demonstrating excellent improvements of RF characteristics.

Low actuation-voltage shift in MEMS switch using ramp dual-pulse

This paper proposes a ramp dual-pulse actuation-voltage waveform that reduces actuation-voltage shift in capacitive microelectromechanical system (MEMS) switches. The proposed waveform as well as two reported waveforms (dual pulse, and novel dual-pulse) are analyzed using equivalent-circuit and equation models. Based on the analysis outcome, the paper provides a clear understanding of trapped charge density in the dielectric. The results show that the proposed actuation-voltage waveform successfully reduces trapped charge and increases lifetime due to lowering of actuation-voltage shift. Using the proposed actuation-voltage waveform, the membrane reaches a steady state on the electrode faster.

Accurate modeling of low actuation voltage RFMEMS switches using artificial neural networks

This paper presents a fast and accurate method for extracting the scattering parameters of a RF MEMS switch by using its essential parameters. A neural network is developed for parametric modeling of the switch. The essential parameters of the switch are analyzed in terms of its return loss and isolation with variation of its geometrical component values. Simulation results show that the proposed approach can be used to accurately model the RF characteristics of RF-MEMS switches. The results show good agreement between the neural network prediction and electromagnetic simulations.

Review of low actuation voltage RF MEMS electrostatic switches based on metallic and carbon alloys

Radio frequency micro electro mechanical systems (RF MEMS) have enabled a new generation of devices that bring many advantages due to their very high performances. There are many incentives for the integration of the RF MEMS switches and electronic devices on the same chip. However, the high actuation voltage of RF MEMS switches compared to electronic devices poses a major problem. By reducing the actuation voltage of the RF MEMS switch, it is possible to integrate it into current electronic devices. Lowering the actuation voltage will have an impact on RF parameters of the RF MEMS switches. This investigation focuses on recent progress in reducing the actuation voltage with an emphasis on a modular approach that gives acceptable design parameters. A number of rules that should be considered in design and fabrication of low actuation RF MEMS switches are suggested.

Design and analysis of a low actuation voltage electrowetting-on-dielectric device

This paper presents an Electrowetting-on-Dielectric (EWOD) device with optimized insulating layers operated by low actuation voltage. The device consists of an electrode array on a silicon substrate, covered by a dielectric layer and a hydrophobic layer. To characterize the performance of the device, simulations are performed for the dielectric layer of Sio₂ and the hydrophobic layer of Sio₂, Su-8 and Parylene C at different voltages. The volume finite difference approach of the Coventorware software was used to carry out the simulations. Two different molar of di-ionized water droplet were considered in the simulations. It was observed that the device having the Sio₂ dielectric layer and the Parylene C hydrophobic layer moved the 1M KCL (potassium chloride) droplet at the actuation voltage of 25V.

RF techniques for lowering the actuation voltage of RF MEMS shunt capacitor switch for C-K band

Increasing the capacitance ratio in RF MEMS shunt capacitive switch will increase its RF performance but also raise its actuation voltage. To improve the RF performance of the switch without increasing its capacitance ratio, this paper explores two methods: reducing the LC resonance from the mm-wave into the X-band by using an inductive bridge, and using two short high impedance transmission lines at both ends of the CPW line. Accordingly, this paper presents the design and simulation of an electro-static low actuation voltage and a very high isolation multipurpose switch with a very large bandwidth. The simulation results are presented and discussed.

Development of a low actuation voltage electrostatic RF MEMS switch

The research focused on the design, fabrication and measurement of a low actuation voltage micro electro mechanical high frequency switch. The fabricated micro switch offers outstanding radio frequency parameters for a very large frequency band, with actuation voltage and switching time less than 20 volts and 3 micro seconds, respectively.

Design and simulation of a low-actuation-voltage MEMS switch

This paper presents a low-actuation-voltage micro-electromechanical system (MEMS) capacitive shunt switch which has a very large bandwidth (4 GHz to 24 GHz). In this work, the isolation of MEMS switch is improved by adding two short high impedance transmission lines at the beginning and end of a coplanar waveguide (CPW). Simulating the switch demonstrates that a return loss (S11) is less than -26 dB for the entire frequency band, and perfect matching at 20 GHz in upstate position. A ramp dual pulse driver is also designed for reducing the capacitive charge injection for considering the reliability of the switch. The simulation results show that the shifting of voltage due to the capacitive charge is reduced by more than 35% of the initial value. Finally, the dynamic behavior of the MEMS switch is simulated by modal analysis and using CoventorWare to calculate the natural frequencies of the switch and its mode shapes. The switching ON and OFF time are 4.48 and 2.43 μs, respectively, with an actuation voltage of less than 15 V.

Design and fabrication of an electrode for low-actuation-voltage electrowetting-on-dielectric devices

This paper presents the design and fabrication of an electrode for low-actuation-voltage electrowetting-on-dielectric (EWOD) devices. The electrode which takes advantage of a novel shape is used to develop an EWOD device. The fabrication process for the electrode and the device development includes laser exposure, wet developing, etching, and stripping. A dielectric layer of 5% (wt./wt.) Polyvinylidene difluoride (PVDF) is used for the electrode insulation. In addition, a very thin (50 nm) layer of Teflon is coated on the EWOD surface to provide hydrophobicity. It is observed that a thin and high dielectric-constant layer can reduce the actuation voltage in the EWOD device. An actuation voltage of 14.8 V was achieved by the EWOD device.

Reducing electrowetting-on-dielectric actuation voltage using a novel electrode shape and a multi-layer dielectric coating

This paper presents design and fabrication of an electrowetting-on-dielectric (EWOD) device using a novel electrode shape and a multi-layer dielectric coating that reduce the actuation voltage of the device to less than 12.6 V. The fabrication of the EWOD electrodes is carried out in several steps including laser exposure, wet developing, etching, and stripping. A high-dielectric-constant multi-layer dielectric coating containing a 770 nm thick Polyvinylidene difluoride (PVDF) layer and a 1 µm thick Cyanoethyl pullulan (CEP) layer, is deposited on the EWOD electrodes for insulation. This multi-layer dielectric structure exhibits a high capacitance per unit area, and the novel electrode shape changes the actuation force at the droplet contact line reducing the voltage required to operate the device. In addition, an overlaying Teflon layer of 50 nm is placed on top of the dielectric structure to provide a hydrophobic surface for droplet manipulation. It is observed from the experiments that the electrode shape and the dielectric structure have contributed to the reduction of the actuation voltage of the EWOD device.

Design and simulation of a low voltage wide band RF MEMS switch

This paper presents design of an electrostatic wide band shunt capacitive coupling RF MEMS switch with low actuation voltage. The key factors of the RF MEMS switch design are the proper scattering parameters, low actuation voltage, and the cost of the fabrication process. An overview of the recent low actuation voltage RFMEMS switches has been presented. These designs still suffer from the complexity of process, lack of reliability, limitation of frequency band, and process cost. RF characteristics of a shunt RF MEMS switches are specified mostly by coupling capacitor in upstate position of the membrane Cu. This capacitor is in trade-off with actuation voltage. In this work, the capacitor is eliminated by using two short high impedance transmission lines, at the input and output of the switch. The simulation results demonstrate an improvement in the RF characteristic of the switch.

Design and simulation of a tunable MEMS filter for wireless biomedical signal transceivers

This paper presents a new architecture for a high quality tunable MEMS filter that can be used in wireless biomedical signal transceivers. It consists of a π match circuit with two shunt capacitive coupling switches separated by a piece of high impedance short transmission line, and also a series switch placed at the quarter wavelength distance away from the π match circuit. The low actuation voltage and also tunability are important features of the design objective. All portions of the filter can be realized simultaneously. Thus, the filter docs not require any extra steps during its fabrication, and is not costly. The simulation results confirm the good performance of the filter.