Thermal modelling of commercial lithium-ion batteries

The accelerating adoption of electrical technologies in vehicles over the recent years has led to an increase in the research on electrochemical energy storage systems, which are among the key elements in these technologies. The application of electrochemical energy storage systems for instance in hybrid electrical vehicles (HEVs) or hybrid mobile working machines allows tolerating high power peaks, leading to an opportunity to downsize the internal combustion engine and reduce fuel consumption, and therefore, CO2 and other emissions. Further, the application of electrochemical energy storage systems provides an option of kinetic and potential energy recuperation. Presently, the lithium-ion (Li-ion) battery is considered the most suitable electrochemical energy storage type in HEVs and hybrid mobile working machines. However, the intensive operating cycle produces high heat losses in the Li-ion battery, which increase its operating temperature. The Li-ion battery operation at high temperatures accelerates the ageing of the battery, and in the worst case, may lead to a thermal runaway and fire. Therefore, an appropriate Li-ion battery cooling system should be provided for the temperature control in applications such as HEVs and mobile working machines. In this doctoral dissertation, methods are presented to set up a thermal model of a single Li-ion cell and a more complex battery module, which can be used if full information about the battery chemistry is not available. In addition, a non-destructive method is developed for the cell thermal characterization, which allows to measure the thermal parameters at different states of charge and in different points of cell surface. The proposed models and the cell thermal characterization method have been verified by experimental measurements. The minimization of high thermal non-uniformity, which was detected in the pouch cell during its operation with a high C-rate current, was analysed by applying a simplified pouch cell 3D thermal model. In the analysis, heat pipes were incorporated into the pouch cell cooling system, and an optimization algorithm was generated for the estimation of the optimalplacement of heat pipes in the pouch cell cooling system. An analysis of the application of heat pipes to the pouch cell cooling system shows that heat pipes significantly decrease the temperature non-uniformity on the cell surface, and therefore, heat pipes were recommended for the enhancement of the pouch cell cooling system.

Compliance of crane electrics with electrical safety standards and codes

Master’s thesis focuses on the questions of crane electrics compliance with electrical safety standards. Overview and short comparison of the world’s effective standards in the field is made in order to understand their demands. Basic concepts of a proper electrical circuit design are presented. Characteristics, construction and operation principles of overcurrent protective devices are studied in details. Electrics of the basic crane is designed according to the assumed customer’s demands, compliance with the requirements of the standards is checked. Solutions to achieve better compliance in some issues are proposed. Accent is made on the National Electrical Code (NEC) and standards by Underwriters Laboratories (UL) latests demands. Requirements of the International Electrotechnical Commission (IEC) are also taken into account.

Transient current technique simulation of semiconductor detectors

Nowadays advanced simulation technologies of semiconductor devices occupies an important place in microelectronics production process. Simulation helps to understand devices internal processes physics, detect new effects and find directions for optimization. Computer calculation reduces manufacturing costs and time. Modern simulation suits such as Silcaco TCAD allow simulating not only individual semiconductor structures, but also these structures in the circuit. For that purpose TCAD include MixedMode tool. That tool can simulate circuits using compact circuit models including semiconductor structures with their physical models. In this work, MixedMode is used for simulating transient current technique setup, which include detector and supporting electrical circuit. This technique was developed by RD39 collaboration project for investigation radiation detectors radiation hard properties.

Electrical Equivalent Circuit for Dry Bacteriorhodopsin Sensor

Bacteriorhodopsin (BR) is a photosensitive protein which functions as a light-driven proton pump. Due to its photoactivity, BR could be used in photosensing and information processing which has inspired researchers to study the photoelectric response and the appropriate measurement instrumentation for BR. In this thesis, the measurement instrumentation connected to a dry BR sensor was confirmed to affect the photovoltage response measured by using voltage amplifiers. Changing of the input impedance of the measurement instrumentation was shown to alter a part of the measured photovoltage response. The photocurrent measurements using transimpedance amplifier and the presented electrical equivalent circuit were used to show that the photocurrent measurements have no significant effect on the photoelectric response. The photocurrent was shown to be a derivate of the photovoltage response measured from the dry BR sensor when it was compared to the response measured with a voltage amplifier. This confirmed that another part of the photovoltage response was not affected by the measurement instrumentation. The time-variant behavior of the dry BR sensor was confirmed in both the photocurrent and the photovoltage measurements. This was caused by the fact that the capacitance of the dry BR sensor changes with the excitation light intensity.

Heating control of an electrical motor

Electrical motors on a ship attackable to different factors which decrease these lifetimes. One of the main external factors on a ship which usually is a reason of the motor failure is a moisture condensation which decreases the motor winding insulation and increase a probability of the short circuit. Therefore, the protection against moisture is necessary for ship electrical motors. The motor should be protected against moisture all time when it does not operate. The necessity of such protection requires a lot of energy consumption. This master’s thesis is focused on the creation of the electrical motor thermal model and on the different methods of the motor protection against moisture analysis with energy consumption point of view.

Design of an amplifier and an instrumentation setup for a harsh environment heat flux measurement application – case axial flux electric machine

Measurement is a tool for researching. Therefore, it is important that the measuring process is carried out correctly, without distorting the signal or the measured event. Researches of thermoelectric phenomena have been focused more on transverse thermoelectric phenomena during recent decades. Transverse Seebeck effect enables to produce thinner and faster heat flux sensor than before. Studies about transverse Seebeck effect have so far focused on materials, so in this Master’s Thesis instrumentation of transverse Seebeck effect based heat flux sensor is studied, This Master’s Thesis examines an equivalent circuit of transverse Seebeck effect heat flux sensors, their connectivity to electronics and choosing and design a right type amplifier. The research is carried out with a case study which is Gradient Heat Flux Sensors and an electrical motor. In this work, a general equivalent circuit was presented for the transverse Seebeck effect-based heat flux sensor. An amplifier was designed for the sensor of the case study, and the solution was produced for the measurement of the local heat flux of the electric motor to improve the electromagnetic compatibility.

Symmetristen komponenttien mallinnus

Tässä insinöörityössä suunniteltiin Helsingin ammattikorkeakoululle jakeluverkoissa tapahtuvien oikosulkujen symmetristen komponenttien laskutavan havainnollistamiseen sopiva sijaiskytkentä. Sijaiskytkennässä tärkeitä huomioitavia asioita olivat mm. jännitetaso, havainnollistavien muuntajien oikosulkukestoisuus, jatkokäyttö laboratoriotyönä ja yleinen havainnollistavuus. Työssä on aluksi perehdytty symmetristen komponenttien ja jakeluverkoissa tapahtuvien oikosulkujen teoriaan. Tämän jälkeen mitoitettiin tarvittavan kytkennän komponenttien jännite- ja virtakestoisuudet mahdolliset lisäkäytöt huomioiden. Näiden rajoitusten mukaan perusteella työtä ruvettiin toteuttamaan. Työssä tilattiin sähkön 40 V:n pääjännitetasolle alentava muuntaja syöttämään oikosulun kestävää muuntajaa, jolla simuloitiin jakeluverkon yleisimpiä vikatyyppejä. Jälkimmäiselle muuntajalle mitoitettiin ja hankittiin sisäistä impedanssia vastaava induktanssi. Tämän avulla rakennettiin kokonaisuus, jonka avulla voidaan simuloida kaikkia tapahtuvia oikosulkuja vastaavat sijaiskytkennät. Työhön jätettiin kehittämisvaraa ja muita laboratoriotyön rakentamismahdollisuuksia tulevien insinööritöiden tekijöille.

Relationship between electrical conductivity and water content in peat growth medium

Tiivistelmä: Turvekasvualustan sähkönjohtavuuden ja vesipitoisuuden riippuvuus mitattuna TDR-käsimittarilla

Relationship of breast fillet deboning time to shear force, pH, cooking loss and color in broilers stunned by high electrical current

Selostus: Korkealla virranvoimakkuudella tainnutettujen broilereiden rintafileen irroitushetken vaikutus lihaksen leikkausvoiman vastukseen, pH:hon, keittohävikkiin ja väriin

Measurement of the tree root growth using electrical impedance spectroscopy

Abstract

Quantum transport phenomena and shallow impurity states in CdSb

This work is dedicated to investigation of the energy spectrum of one of the most anisotropic narrow-gap semiconductors, CdSb. At the beginning of the present studies even the model of its energy band structure was not clear. Measurements of galvanomagnetic effects in wide temperature range (1.6 - 300 K) and in magnetic fields up to 30 T were chosen for clarifying of the energy spectrum in the intentionally undoped CdSb single crystals and doped with shallow impurities (In, Ag). Detection of the Shubnikov - de Haas oscillations allowed estimating the fundamental energy spectrum parameters. The shapes of the Fermi surfaces of electrons (sphere) and holes (ellipsoid), the number of the equivalent extremums for valence band (2) and their positions in the Brillouin zone were determined for the first time in this work. Also anisotropy coefficients, components of the tensor of effective masses of carriers, effective masses of density of states, nonparabolicity of the conduction and valence bands, g-factor and its anisotropy for n- and p-CdSb were estimated for the first time during these studies. All the results obtained are compared with the cyclotron resonance data and the corresponding theoretical calculations for p-CdSb. This is basic information for the analyses of the complex transport properties of CdSb and for working out the energy spectrum model of the shallow energy levels of defects and impurities in this semiconductor. It was found out existence of different mechanisms of hopping conductivity in the presence of metal - insulator transition induced by magnetic field in n- and p-CdSb. Quite unusual feature opened in CdSb is that different types of hopping conductivity may take place in the same crystal depending on temperature, magnetic field or even orientation of crystal in magnetic field. Transport properties of undoped p-CdSb samples show that the anisotropy of the resistivity in weak and strong magnetic fields is determined completely by the anisotropy of the effective mass of the holes. Temperature and magnetic field dependence of the Hall coefficient and magnetoresistance is attributed to presence of two groups of holes with different concentrations and mobilities. The analysis demonstrates that below Tcr ~ 20 K and down to ~ 6 - 7 K the low-mobile carriers are itinerant holes with energy E2 ≈ 6 meV. The high-mobile carriers, at all temperatures T < Tcr, are holes activated thermally from a deeper acceptor band to itinerant states of a shallower acceptor band with energy E1 ≈ 3 meV. Analysis of temperature dependences of mobilities confirms the existence of the heavy-hole band or a non-equivalent maximum and two equivalent maxima of the light-hole valence band. Galvanomagnetic effects in n-CdSb reveal the existence of two groups of carriers. These are the electrons of a single minimum in isotropic conduction band and the itinerant electrons of the narrow impurity band, having at low temperatures the energies above the bottom of the conduction band. It is found that above this impurity band exists second impurity band of only localized states and the energy of both impurity bands depend on temperature so that they sink into the band gap when temperature is increased. The bands are splitted by the spin, and in strong magnetic fields the energy difference between them decreases and redistribution of the electrons between the two impurity bands takes place. Mobility of the conduction band carriers demonstrates that scattering in n-CdSb at low temperatures is strongly anisotropic. This is because of domination from scattering on the neutral impurity centers and increasing of the contribution to mobility from scattering by acoustic phonons when temperature increases. Metallic conductivity in zero or weak magnetic field is changed to activated conductivity with increasing of magnetic field. This exhibits a metal-insulator transition (MIT) induced by the magnetic field due to shift of the Fermi level from the interval of extended states to that of the localized states of the electron spectrum near the edge of the conduction band. The Mott variablerange hopping conductivity is observed in the low- and high-field intervals on the insulating side of the MIT. The results yield information about the density of states, the localization radius of the resonant impurity band with completely localized states and about the donor band. In high magnetic fields this band is separated from the conduction band and lies below the resonant impurity bands.