Electrical and optical properties of Li-doped MBE-grown p-type ZnSe films


Autoria(s): Hingerl, K.; Sitter, H.; Lilja, J.; Kuusisto,E.; Imai, K.; Pessa, M.; Kudlek, G.; Gutowski, J.
Data(s)

25/07/2007

25/07/2007

1991

Identificador

http://www.doria.fi/handle/10024/7105

Publicador

Institute of Physics Publishing

Bristol

Relação

Semiconductor Science and Technology, Volume 6, Number 9A, 1991, pp. A72-A75(1)

ISSN 0268-1242

Palavras-Chave #Epitaxial growth #molecular beam epitaxy #zinc selenide
Tipo

Artikkeli: tieteellisessä alkuperäisjulkaisussa