Electrical and optical properties of As- and Li-doped ZnSe films


Autoria(s): Toivonen, M.; Rothemund, W.; Lilja, J.; Pessa, M.; Jantsch, W.; As, D. J.; Hingerl, K.; Sitter, H.; Juza, P.
Data(s)

26/07/2007

26/07/2007

1991

Identificador

0-8194-0422-5

http://www.doria.fi/handle/10024/7165

Idioma(s)

en

Publicador

USA: SPIE

Relação

Proceedings of SPIE -- Volume 1361 Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, Manijeh Razeghi, Editor, March 1991.

Palavras-Chave #Epitaxial growth #zinc selenide #molecular beam epitaxy
Tipo

Artikkeli: tieteellisessä alkuperäisjulkaisussa