Electrical and optical properties of As- and Li-doped ZnSe films


Autoria(s): Rothemund, W.; Toivonen, M.; Juza, P.; As, D. J.; Jantsch, W.; Pessa, M.; Sitter, H.; Hingerl, K.; Lilja, J.
Data(s)

25/07/2007

25/07/2007

1991

Identificador

http://www.doria.fi/handle/10024/7090

Publicador

USA

SPIE

Relação

Proceedings of SPIE -- Volume 1361 Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, Manijeh Razeghi, Editor, March 1991, pp. 943-953

Palavras-Chave #Epitaxial growth #zinc selenide #molecular beam epitaxy
Tipo

Artikkeli: tieteellisessä alkuperäisjulkaisussa