Quantum ground state of self-organized atomic crystals in optical resonators

Cold atoms, driven by a laser and simultaneously coupled to the quantum field of an optical resonator, may self-organize in periodic structures. These structures are supported by the optical lattice, which emerges from the laser light they scatter into the cavity mode and form when the laser intensity exceeds a threshold value. We study theoretically the quantum ground state of these structures above the pump threshold of self-organization by mapping the atomic dynamics of the self-organized crystal to a Bose-Hubbard model. We find that the quantum ground state of the self-organized structure can be the one of a Mott insulator, depending on the pump strength of the driving laser. For very large pump strengths, where the intracavity-field intensity is maximum and one would expect a Mott-insulator state, we find intervals of parameters where the phase is compressible. These states could be realized in existing experimental setups.

Bilinear-biquadratic spin-1 chain undergoing quadratic Zeeman effect

The Heisenberg model for spin-1 bosons in one dimension presents many different quantum phases, including the famous topological Haldane phase. Here we study the robustness of such phases in front of a SU(2) symmetry-breaking field as well as the emergence of unique phases. Previous studies have analyzed the effect of such uniaxial anisotropy in some restricted relevant points of the phase diagram. Here we extend those studies and present the complete phase diagram of the spin-1 chain with uniaxial anisotropy. To this aim, we employ the density-matrix renormalization group together with analytical approaches. The complete phase diagram can be realized using ultracold spinor gases in the Mott insulator regime under a quadratic Zeeman effect.

Entanglement control via reservoir engineering in ultracold atomic gases

We study the entanglement of two impurity qubits immersed in a Bose-Einstein condensate (BEC) reservoir. This open quantum system model allows for interpolation between a common dephasing scenario and an independent dephasing scenario by modifying the wavelength of the superlattice superposed to the BEC, and how this influences the dynamical properties of the impurities. We demonstrate the existence of rich dynamics corresponding to different values of reservoir parameters, including phenomena such as entanglement trapping, revivals of entanglement, and entanglement generation. In the spirit of reservoir engineering, we present the optimal BEC parameters for entanglement generation and trapping, showing the key role of the ultracold-gas interactions. Copyright (C) EPLA, 2013

Characterization of Bose-Hubbard models with quantum nondemolition measurements

We propose a scheme for the detection of quantum phase transitions in the one-dimensional (1D) Bose-Hubbard (BH) and 1D Extended Bose-Hubbard (EBH) models, using the nondemolition measurement technique of quantum polarization spectroscopy. We use collective measurements of the effective total angular momentum of a particular spatial mode to characterize the Mott insulator to superfluid phase transition in the BH model and the transition to a density wave state in the EBH model. We extend the application of collective measurements to the ground states at various deformations of a superlattice potential.

Material effects on stress-induced defect generation in trenched silicon-on-insulator structures

We have investigated the influence of the material properties of the silicon device layer on the generation of defects, and in particular slip dislocations, in trenched and refilled fusion-bonded silicon-on-insulator structures. A strong dependence of the ease of slip generation on the type of dopant species was observed, with the samples falling into three basic categories; heavily boron-doped silicon showed ready slip generation, arsenic and antimony-doped material was fairly resistant to slip, while silicon moderately or lightly doped with phosphorous or boron gave intermediate behavior. The observed behavior appears to be controlled by differences in the dislocation generation mechanism rather than by dislocation mobility. The introduction of an implanted buried layer at the bonding interface was found to result in an increase in slip generation in the silicon, again with a variation according to the dopant species. Here, the greatest slip occurred for both boron and antimony-implanted samples. The weakening of the implanted material may be related to the presence of a band of precipitates observed in the silicon near the bonding interface. (C) 2001 The Electrochemical Society.