Study of dislocations and stress in silicon-on-insulator tubs using transmission electron microscopy and finite element modelling


Autoria(s): McMullan, A.J.; O'Mahoney, D.; Nevin, W.A.; Paxton, Anthony; Gregg, Marty
Data(s)

01/04/2003

Identificador

http://pure.qub.ac.uk/portal/en/publications/study-of-dislocations-and-stress-in-silicononinsulator-tubs-using-transmission-electron-microscopy-and-finite-element-modelling(6bf7785f-0f07-4a8a-a6c5-695890336af3).html

http://www.scopus.com/inward/record.url?scp=3042781021&partnerID=8YFLogxK

Idioma(s)

eng

Direitos

info:eu-repo/semantics/restrictedAccess

Fonte

McMullan , A J , O'Mahoney , D , Nevin , W A , Paxton , A & Gregg , M 2003 , ' Study of dislocations and stress in silicon-on-insulator tubs using transmission electron microscopy and finite element modelling ' Paper presented at 7th International Symposium on Semiconductor Wafer Bonding , Paris , France , 01/04/2003 - 01/04/2003 , pp. 39-48 .

Tipo

conferenceObject