Cuprous oxide catalyzed air oxidation of thiosulfate and tetrathionate

Thiosulfate (S2O32−) and tetrathionate (S4O62−)are oxidized to sulfate by air at atmospheric pressure and 50–70°C in the presence of cuprous oxide (Cu2O) as catalyst. Sulfate is produced from S2O32− by series-parallel reaction paths involving S4O62− as an intermediate. The rate data obtained for air oxidation of S2O32− on Cu2O agree well with a pseudo-homogeneous first order kinetic scheme, yielding values of rate constants for series parallel reaction paths which have been used in modelling the catalyzed air oxidation of S2O32−. Air oxidation of S4O62− on Cu2O proceeds at a higher rate in the presence of S2O32− than in its absence. Cu2O is less active than Cu2S for the air oxidation of S2O32−, as shown by the rate constant values which for Cu2O catalyzed oxidation are an order of magnitude smaller than those for the Cu2S catalyzed oxidation.

Constant conductance fluctuations in disordered metals

We discuss the effect of fluctuations of the random potential in directions transverse to the current flow in a modified Migdal-Kadanoff approach to probabilistic scaling of conductance with size L, in d-dimensional metallic systems. The conductance cumulants are finite and vary as Ld−1−n for n greater-or-equal, slanted 2 i.e. conductance fluctuations are constant for d = 3. The mean conductance has a non-classical correction with Image Full-size image (<1K) for d greater-or-equal, slanted 2. The form of the higher cumulants is strongly influenced by the transverse potential fluctuations and may be compared with the results of perturbative diagrammatic approaches.

Metallization and crystallization of semiconducting amorphous Ga20Te80 alloy under high pressure

Pressure and temperature dependence of the electrical resistivity of amorphous Ga20Te80 alloy is reported for the first time. The alloy undergoes a pressure induced amorphous semiconductor-to-crystalline metal phase transition at 6.5 ± 0.5 GPa. The high pressure crystalline phase is a mixture of Te and GaTe3 phases.

Pressure-induced electronic and structural transformations in bulk gese2 glass

The pressure dependence of the electrical of the electrical resistivity of bulk GeSe2 glass shows a semiconductor-to-metal transition at 7 GPa pressure. The high pressure phase is examined using he x-ray diffractometer and is found to be crystalline, with a face-centered cubic structure having a =4.06A. The electrical conductivity has also been studied as a function of temperature at various pressures.

High pressure induced crystallization of rapidly solidified Al---Fe and Al---Mn quasi-crystalline alloysstar

The presence of phases showing icosahedral point symmetry was reported by Shechtman, Blech, Gratias and Cahn in rapidly quenched alloys of Al---Mn, Al---Fe and Al---Cr, and subsequently many other splat-cooled alloys with the i phase have been reported. In this paper we present the first results of high pressure experiments carried out on Al---Fe and Al---Mn quasi-crystals. The experiments performed at room temperature showed irreversible quasi-crystal-to-crystal transitions in Al---Mn and Al---Fe alloys. The transition pressures are 49 kbar for Al78Mn22, 93 kbar for Al86Mn14, 79 kbar for Al86Fe14, 54 kbar for Al82Fe18 and 108 kbar for Al75Fe25. The high pressure phases are found to be the equilibrium phases.

Electrical transport in layered crystalline semiconductors GeS doped with Ag, P impurities at high pressure

A study of the transport properties of layered crystalline semiconductors GeS (undoped and doped with Ag, P impurity) under quasihydrostatic pressure using Bridgman anvil system is made for the first time. Pressure-induced effects in undoped crystals reveal initial rise in resistivity followed by two broad peaks at higher pressures. Silver doping induces only minor changes in the behaviour except removing the second peak. Phosphorous impurity is found to have drastic effect on the transport properties. Temperature dependence of the resistivity exhibits two activation energies having opposite pressure coefficients. Results are discussed in the light of intrinsic features of the layered semiconductors.

Pressure induced effects in bulk amorphous n-type semiconductors(GeSe3.5)100âxBix

The effect of pressure on the electrical resistivity of amorphous n-type (GeSe3.5)100�xBix been studied in a Bridgeman anvil system up to a pressure of 90 kbar down to liquid nitrogen temperature. A continuous amorphous semiconductor to metal-like solid transition in the undoped GeSe3.5 is observed at room temperature. Incorporation of Bi in the GeSe3.5 network is found to significantly disturb the behaviour of the resistivity with pressure. With increasing Bi concentration a much broader variation in resistivity with pressure is observed. The temperature dependence of the resistivity and activation energy at different pressures is also measured and they are found to be composition dependent. Results are discussed in the light of the Phillips Model of ordered clusters in chalcogenide semiconductors.

Generation of rotationally dominated galaxies by mergers of pressure-supported progenitors

Through the analysis of a set of numerical simulations of major mergers between initially non-rotating, pressure-supported progenitor galaxies with a range of central mass concentrations, we have shown that: (1) it is possible to generate elliptical-like galaxies, with outside one effective radius, as a result of the conversion of orbital- into internal-angular momentum; (2) the outer regions acquire part of the angular momentum first; (3) both the baryonic and the dark matter components of the remnant galaxy acquire part of the angular momentum, the relative fractions depending on the initial concentration of the merging galaxies. For this conversion to occur the initial baryonic component must be sufficiently dense and/or the encounter should take place on an orbit with high angular momentum. Systems with these hybrid properties have recently been observed through a combination of stellar absorption lines and planetary nebulae for kinematic studies of early-type galaxies. Our results are in qualitative agreement with these observations and demonstrate that even mergers composed of non rotating, pressure-supported progenitor galaxies can produce early-type galaxies with significant rotation at large radii.

Embedding Of Non-Simple Lie-Groups, Coupling-Constant Relations And Non-Uniqueness Of Models Of Unification

A general derivation of the coupling constant relations which result on embedding a non-simple group like SU L (2) @ U(1) in a larger simple group (or graded Lie group) is given. It is shown that such relations depend only on the requirement (i) that the multiplet of vector fields form an irreducible representation of the unifying algebra and (ii) the transformation properties of the fermions under SU L (2). This point is illustrated in two ways, one by constructing two different unification groups containing the same fermions and therefore have same Weinberg angle; the other by putting different SU L (2) structures on the same fermions and consequently have different Weinberg angles. In particular the value sin~0=3/8 is characteristic of the sequential doublet models or models which invoke a large number of additional leptons like E 6, while addition of extra charged fermion singlets can reduce the value of sin ~ 0 to 1/4. We point out that at the present time the models of grand unification are far from unique.

Study of effects of dopants on structure of vitreous semiconductors (GeSe3.5)100-xMx (M = Bi, Sb) using high pressure techniques

An investigation of the problem of controlled doping of amorphous chalcogenide semiconductors utilizing a Bridgman anvil high pressure technique, has been undertaken. Bulk amorphous semiconducting materials (GeSe3.5)100-x doped with M = Bi (x = 2, 4, 10) and M = Sb (x = 10) respectively are studied up to a pressure of 100 kbar down to liquid nitrogen temperature, with a view to observe the impurity induced modifications. Measurement of the electrical conductivity of the doped samples under quasi-hydrostatic pressure reveals that the pressure induced effects in lightly doped (2 at % Bi) and heavily doped (x = 4, 10) semiconductors are markedly different. The pressure effects in Sb-doped semiconductors are quite different from those in Bi-doped material.

Measurement of resistivity and dielectric constant of beach-sand minerals

Resistivity and dielectric constant are important parameters which influence the separation of particles in a drum-type electrostatic separator. The paper provides details of the measurement of the parameters and data on the magnitude of resistivity and dielectric constant of the minerals of beach sand.

Evidence for a new metastable crystalline compound in Ge---Te system

Pressure dependence of the electrical resistivity of bulk, melt quenched GexTe100−x glasses (15 less-than-or-equals, slant x less-than-or-equals, slant 28) has been studied up to 8GPa pressure. All the glasses exhibit a sharp, discontinuous glass to crystal transition under pressure. The high pressure crystalline phases are identified to have a face centered cubic structure. The value of the cell constant is 0.779nm for 15 less-than-or-equals, slant x less-than-or-equals, slant 17, 0.642nm for x=20 and 0.55lnm for 22 ≤ x ≤ 28 samples respectively. The cell constants of the high pressure crystalline phases suggest the possible existance of a new metastable crystalline compound in the Ge---Te system with F.C.C. structure and cell constant equal to 1.109nm as reported by Moore et al.

Pressure-induced polymorphous crystallization in bulk Si20Te80 glass

The effect of pressure on the electrical resistivity of bulk Si20Te80 glass has been studied up to a pressure of 8 GPa. A discontinuous transition occurs at a pressure of 7 GPa. The X-ray diffraction studies on the pressure quenched sample show that the high pressure phase is crystalline with hexagonal structure (c/a = 1.5). On heating, the high pressure hexagonal phase has on exothermic decomposition atT = 586 K into two crystalline phases, which are the stable phases tellurium and SiTe2 obtained by simple heating of the glass.