Pressure-induced electronic and structural transformations in bulk gese2 glass


Autoria(s): Prasad, MVN; Parthasarathy, G; Gopal, ESR; Asokan, S
Data(s)

1984

Resumo

The pressure dependence of the electrical of the electrical resistivity of bulk GeSe2 glass shows a semiconductor-to-metal transition at 7 GPa pressure. The high pressure phase is examined using he x-ray diffractometer and is found to be crystalline, with a face-centered cubic structure having a =4.06A. The electrical conductivity has also been studied as a function of temperature at various pressures.

Formato

application/pdf

Identificador

http://eprints.iisc.ernet.in/21921/1/2fulltext.pdf

Prasad, MVN and Parthasarathy, G and Gopal, ESR and Asokan, S (1984) Pressure-induced electronic and structural transformations in bulk gese2 glass. In: Pramana, 23 (1). pp. 31-37.

Publicador

Indian Academy of Sciences

Relação

http://www.ias.ac.in/j_archive/pramana/23/vol23contents.html

http://eprints.iisc.ernet.in/21921/

Palavras-Chave #Physics
Tipo

Journal Article

PeerReviewed