Pressure-induced polymorphous crystallization in bulk Si20Te80 glass
Data(s) |
01/02/1986
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Resumo |
The effect of pressure on the electrical resistivity of bulk Si20Te80 glass has been studied up to a pressure of 8 GPa. A discontinuous transition occurs at a pressure of 7 GPa. The X-ray diffraction studies on the pressure quenched sample show that the high pressure phase is crystalline with hexagonal structure (c/a = 1.5). On heating, the high pressure hexagonal phase has on exothermic decomposition atT = 586 K into two crystalline phases, which are the stable phases tellurium and SiTe2 obtained by simple heating of the glass. |
Formato |
application/pdf |
Identificador |
http://eprints.iisc.ernet.in/22807/1/jl_mat_sci_21-2_625_1986.pdf Asokan, S and Gopal, ESR and Parthasarathy, G (1986) Pressure-induced polymorphous crystallization in bulk Si20Te80 glass. In: Journal of Materials Science, 21 (2). pp. 625-629. |
Publicador |
Springer |
Relação |
http://dx.doi.org/10.1007/BF01145533 http://eprints.iisc.ernet.in/22807/ |
Palavras-Chave | #Instrumentation and Applied Physics (Formally ISU) #Physics |
Tipo |
Journal Article PeerReviewed |