Metallization and crystallization of semiconducting amorphous Ga20Te80 alloy under high pressure
| Data(s) |
05/09/1988
|
|---|---|
| Resumo |
Pressure and temperature dependence of the electrical resistivity of amorphous Ga20Te80 alloy is reported for the first time. The alloy undergoes a pressure induced amorphous semiconductor-to-crystalline metal phase transition at 6.5 ± 0.5 GPa. The high pressure crystalline phase is a mixture of Te and GaTe3 phases. |
| Formato |
application/pdf |
| Identificador |
http://eprints.iisc.ernet.in/21894/1/pdf.pdf Parthasarathy, G and Asokan, S and Titus, SSK and Krishna, RR (1988) Metallization and crystallization of semiconducting amorphous Ga20Te80 alloy under high pressure. In: Physics Letters A, 131 (7-8). pp. 441-444. |
| Publicador |
Elsevier Science |
| Relação |
http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TVM-46JYKPJ-1F&_user=512776&_coverDate=09%2F05%2F1988&_rdoc=9&_fmt=high&_orig=browse&_srch=doc-info%28%23toc%235538%231988%23998689992%23333549%23FLP%23display%23Volume%29&_cdi=5538&_sort=d&_docan http://eprints.iisc.ernet.in/21894/ |
| Palavras-Chave | #Instrumentation and Applied Physics (Formally ISU) |
| Tipo |
Journal Article PeerReviewed |
