Electrical transport in layered crystalline semiconductors GeS doped with Ag, P impurities at high pressure


Autoria(s): Parthasarathy, G; Gopal, ESR
Data(s)

1984

Resumo

A study of the transport properties of layered crystalline semiconductors GeS (undoped and doped with Ag, P impurity) under quasihydrostatic pressure using Bridgman anvil system is made for the first time. Pressure-induced effects in undoped crystals reveal initial rise in resistivity followed by two broad peaks at higher pressures. Silver doping induces only minor changes in the behaviour except removing the second peak. Phosphorous impurity is found to have drastic effect on the transport properties. Temperature dependence of the resistivity exhibits two activation energies having opposite pressure coefficients. Results are discussed in the light of intrinsic features of the layered semiconductors.

Formato

application/pdf

Identificador

http://eprints.iisc.ernet.in/22054/1/37.pdf

Parthasarathy, G and Gopal, ESR (1984) Electrical transport in layered crystalline semiconductors GeS doped with Ag, P impurities at high pressure. In: Journal of Physics and Chemistry of Solids, 45 (11-12). pp. 1189-1194.

Publicador

Elsevier Science

Relação

http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TXR-46MF60P-NK&_user=512776&_rdoc=1&_fmt=&_orig=search&_sort=d&_docanchor=&view=c&_acct=C000025298&_version=1&_urlVersion=0&_userid=512776&md5=1ffa619731e67b7f495ae8f0e93a7689

http://eprints.iisc.ernet.in/22054/

Palavras-Chave #Physics
Tipo

Journal Article

PeerReviewed