Surface morphology evolution of strained InAs/GaAs(331)a films

Surface morphology evolution of strained InAs/GaAs(331)A films was systematically investigated in this paper. Under As-rich conditions, InAs elongated islands aligned along [1 (1) over bar0] are formed at a substrate temperature of 510 degrees C. We explained it as a result of the anisotropic diffusion of adatoms. Under In-rich conditions, striking change has occurred with respect to the surface morphology of the InAs layers. Instead of anisotropic InAs elongated islands, unique island-pit pairs randomly distributed on the whole surface were observed. Using cooperative nucleation mechanisms proposed by Jesson et al. [Phys. Rev. Lett. 77, 1330 (1996)], we interpret the resulting surface morphology evolution.

Surface morphology evolution of poly (styrene-block-4-vinylpyridine) (PS-b-P4VP)(H+) and poly(methyl methacrylate)-dibenzo-18-crown-6-poly(methyl methacrylate) (PMCMA) supramolecular film

Well-ordered nanostructured polymeric supramolecular thin films were fabricated from the supramolecular assembly of poly(styrene-block-4-vinylpyridine) (PS-b-P4VP)(H+) and poly(methyl methacrylate)-dibenzo-18-crown-6-poly(methyl methacrylate) (PMCMA). A depression Of cylindrical nanodomains was formed by the block of P4VP(H+) and PMCMA associates surrounded by PS. The repulsive force aroused from the incompatibility between the block of P4VP(H+) and PMCMA was varied through changing the molecule weight (M-w) of PMCMA, the volume fraction of the block of P4VP(H+), and annealing the film at high temperature. Increasing the repulsive force led to a change of overall morphology from ordered nanoporous to featureless structures. The effects of solvent nature and evaporation rate on the film morphology were also investigated. Further evolution of surface morphologies from nanoporous to featureless to nanoporous structures was observed upon exposure to carbon bisulfide vapors for different treatment periods. The wettability of the film surface was changed from hydrophilicity to hydrophobicity due to the changes of the film surface microscopic composition.

Surface morphology evolution of a thin polymeric supramolecular film by tuning interactions

A polymeric supramolecule consisting of symmetric polystyrene-block-poly(4-vinylpytidine) (PS-b-P4VP), dodecylbenzenesulfonic acid (DBSA), and 3-pentadecylphenol (PDP) was formed by proton transfer and hydrogen bonding. The surface morphology,of a thin film of the polymeric supramolecule has been investigated. The spherical PS microdomains embedded in a P4VP(DBSA)(1.0)(PDP)(1.0) matrix are observed for the as-cast film because the weight fraction, f(comb), of the P4VP(DBSA) (1.0)(PDP)(1.0) blocks is much higher than that of PS as a result of the non-covalent interactions of P4VP and DBSA and DBSA and PDR Upon annealing the PS-b-P4VP(1:1)(DBSA)(1.0)(PDP)(1.0) film at high temperatures, the hydrogen bonding between the DBSA and PDP diminishes, which leads to a change of overall morphology from an ordered sphere to a pitted structure.

Solvent and polymer concentration effects on the surface morphology evolution of immiscible polystyrene/poly(methyl methacrylate) blends

The effects of solvent nature on the surface topographies of polystyrene (PS)/poly(methyl methacrylate) (PMMA) blend films spin-coated onto the silicon wafer were investigated. Four different solvents, such as ethylbenzene, toluene, tetrahydrofuran and dichloromethane, were chosen. They are better solvents for PS than that for PMMA. When dichloromethane, tetrahydrofuran and toluene were used, PMMA-rich phase domains protruded from the background of PS. When ethylbenzene was used, PS-rich phase domains elevated on the average height of PMMA-rich phase domains. In addition, continuous pits, networks and isolated droplets consisted of PS formed on the blend film surfaces with the decrease of polymer concentrations. The mechanism of the surface morphology evolution was discussed in detail.

Polymer concentration, shear and stretch field effects on the surface morphology evolution during the spin-coating

Polymer concentration and shear and stretch field effects on the surface morphology evolution of three different kinds of polymers (polystyrene (PS), polybutadiene (PB) and polystyrene-b-polybutadiene-b-polystyrene (SBS)) during the spin-coating were investigated by means of atomic force microscopy (AFM). For PS and SBS, continuous film, net-like structure and particle structure were observed at different concentrations. For PB, net-like structures were not observed and continuous films and radial array of droplets emerged. Moreover, we compared surface morphology transitions on different substrate locations from the center to the edge. For PS, net-like structure, broken net-like structure and irregular array of particles were observed. For SBS, net-like structure, periodically orientated string-like structure and broken-line structure appeared. But for PB, flower-like holes in the continuous film, distorted stream-like structure and irregular distributions of droplets emerged. These different transitions of surface morphologies were discussed in terms of individual material property.

Surface morphology evolution of thin triblock copolymer films during spin coating

The surface morphology evolution of thin poly(styrene-block-ethylene/butylenes-block-styrene) (SEBS) triblock copolymer films as a function of the copolymer concentration was investigated by means of dynamic mode atomic force microscopy. At a relatively low copolymer concentration (0.025% w/v), the periodically orientated stripes were observed. This kind of surface patterning produced in the spin-coating process has not been reported in the literature before. It has been shown by our experiment that a shearing and stretching field can cause flexible polymer coils or aggregates to orientate during the spin coatings At a copolymer concentration of 0.05% w/v, SEBS molecule aggregates form network structures in the whole film. With further increase of the copolymer concentration, a continuous film with a microphase-separated structure was visualized.

Surface morphology and optical property of 1.3 mu m In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE

Surface morphology and optical properties of 1.3 mum self-organized InGaAs/GaAs quantum dots structure grown by molecular beam epitaxy have been investigated by atomic force microscopy and photoluminescence measurements. It has been shown that the surface morphology evolution and emission wavelengths of InGaAs/GaAs QDs can be controlled effectively via cycled monolayer deposition methods due to the reduction of the surface strain. Our results provide important information for optimizing the epitaxial parameters for obtaining 1.3 mum long wavelength emission quantum dots structures. (C) 2002 Elsevier Science B.V. All rights reserved.

Surface morphology and optical property of 1.3 mu m In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE

Surface morphology and optical properties of 1.3 mum self-organized InGaAs/GaAs quantum dots structure grown by molecular beam epitaxy have been investigated by atomic force microscopy and photoluminescence measurements. It has been shown that the surface morphology evolution and emission wavelengths of InGaAs/GaAs QDs can be controlled effectively via cycled monolayer deposition methods due to the reduction of the surface strain. Our results provide important information for optimizing the epitaxial parameters for obtaining 1.3 mum long wavelength emission quantum dots structures. (C) 2002 Elsevier Science B.V. All rights reserved.

Evolution of surface morphology and photoluminescence characteristics of 1.3-mu m In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy

Evolution of surface morphology and optical characteristics of 1.3-mu m In0.5Ga0.5As/GaAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) are investigated by atomic force microscopy (AFM) and photoluminescence (PL). After deposition of 16 monolayers (ML) of In0.5Ga0.5As, QDs are formed and elongated along the [110] direction when using sub-ML depositions, while large size InGaAs QDs with better uniformity are formed when using ML or super-ML depositions. It is also found that the larger size QDs show enhanced PL efficiency without optical nonlinearity, which is in contrast to the elongated QDs.

The influence of the microstructure evolution on the surface morphology in the annealing process of helium-implanted spinel

Single-crystalline spinel (MgAl2O4) specimens were implanted with helium ions of 100 keV at three successively increasing fluences of (0.5, 2.0 and 8.0) x 10(16) ions/cm(2) at room temperature. The specimens were subsequently annealed in vacuum at different temperatures ranging from 500 to 1100 degrees C. Different techniques, including Fourier transformed infrared spectroscopy (FTIR), thermal desorption spectrometry (TDS), atomic force microscopy (AFM) and scanning electron microscopy (SEM) were used to investigate the specimens, It was found that the absorbance peak in the FTIR due to the stretching vibration of the Al-O bond shifts to smaller wave numbers with increasing fluence, shifting back to larger wave numbers with an increase of annealing temperature. The absorbance peak shift has a linear relationship with the fluence increase in the as-implanted state, while it does not have a linear relationship with the fluence increase after the annealing process. Surface deformation occurred in the specimens implanted with fluences of 2.0 and 8.0 x 10(16) ions/cm(2) in the annealing process. The phenomena described above can be attributed to differences in defect formation in the specimens. (C) 2008 Elsevier B.V. All rights reserved.

Influence of indium composition on the surface morphology of self-organized InxGa1-xAs quantum dots on GaAs substrates

InxGa1-xAs self-organized quantum dots with x=1.0, 0.5, and 0.35 have been grown by molecular beam epitaxy. The areal density, distribution, and shapes have been found to be dependent on x. The dot shape changes from a round shape for x=1.0 to an elliptical shape for x less than or equal to 0.5. The major axis and minor axis of the elliptical InxGa1-xAs dots are along the [(1) over bar 10] and [110] directions, respectively. The ordering phenomenon is also discussed. It is suggested that the dot-dot interaction may play important roles in the self-organization process. (C) 2000 American Institute of Physics. [S0021-8979(00)10701-7].

Morphology Evolution of (331)A High-Index Surfaces During Atomic Hydrogen Assisted Molecular Beam Epitaxy (MBE)

Step like morphology of (331)A high-index surfaces during atomic hydrogen assisted molecular beam epitaxy (MBE) growth has been investigated. Atomic Force Microscope (AFM) measurements show that in conventional MBE, the step heights and terrace widths of GaAs layers increase monotonically with increasing substrate temperatures. The terrace widths and step densities increase with increasing the GaAs layer thickness and then saturates. And, in atomic hydrogen assisted MBE, the terrace width reduces and density increases when depositing the same amount of GaAs. It attributes this to the reduced surface migration length of Ga adatoms with atomic hydrogen. Laterally ordered InAs self-aligned nano-wires were grown on GaAs (331)A surfaces and its optical polarization properties were revealed by photoluminescence measurements.

Surface morphology control of immiscible polymer-blend thin films

The effects of the molecular weights (molecular weight of polystyrene, M-w,M-PS, varying from 2.9 to 129 k) on the surface morphologies of spin-coated and annealed polystyrene/poly (methyl methacrylate) (PS/PMMA = 50/50, w/w) blend films were investigated by atomic force microscopy and X-ray photoelectron spectroscopy. For the spin-coated films, when the M-w,M-PS varied from 2.9 to 129 k, three different kinds of surface morphologies (a nanophase-separated morphology, a PMMA cellular or network-like morphology whose meshes filled with PS, a sea-island like morphology) were observed and their formation mechanisms are discussed, respectively. Upon annealing, two different morphology-evolution processes were observed. It is found that a upper PS-rich phase layer is formed when M-w,M-PS < 4 k, and this behavior is mainly attributed to the low interfacial tension between PS and PMMA component. When M-w,M-PS > 4 k, the PS-rich phase forms droplets on top of the PMMA-rich phase layer which wets the SiOx substrate. These results indicate that the surface morphology of the polymer blend films can be controlled by the polymer molecular weight and annealing conditions.

Influence of thermal annealing on optical properties and surface morphology of NiOx thin films

NiOx thin films were deposited by reactive DC-magnetron sputtering from a nickel metal target in Ar + O-2 with the relative O-2 content of 5%. Thermal annealing effects on optical properties and surface morphology of NiOx, films were investigated by X-ray photoelectron spectroscopy, thermogravimetric analysis, scanning electron microscope and optical measurement. The results showed that the changes in optical properties and surface morphology depended on the temperature. The surface morphology of the films changed obviously as the annealing temperature increased due to the reaction NiOx -> NiO + O-2 releasing O-2. The surface morphology change was responsible for the variation of the optical properties of the films. The optical contrast between the as-deposited films and 400 degrees C annealed films was about 52%. In addition, the relationship of the optical energy band gap with the variation of annealing temperature was studied. (c) 2006 Elsevier B.V. All rights reserved.

Surface morphology and properties of zirconia thin films prepared at different deposition rates

ZrO2 thin films were prepared on BK7 glass substrates by electron beam evaporation deposition method. The influence of deposition rate varying from 1.2 to 6.3 nm s(-1) on surface morphology and other properties of ZrO2 films were examined. With increasing deposition rate, the surface defect density increased. The decrease in half width at full maximum in X-ray diffraction pattern with deposition rate indicates an increase in crystal dimension with increasing deposition rate. Electron beam deposited ZrO2 films are known to be inhomogeneous. From the change of the peak transmittance value, it can be deduced that the inhomogeneity of ZrO2 films strengthened gradually with increasing deposition rate. The type of surface defects changed from nodules to craters when the deposition rate was high enough.