Evolution of surface morphology and photoluminescence characteristics of 1.3-mu m In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy


Autoria(s): Wei QX; Ren ZW; He ZH; Niu ZC
Data(s)

2009

Resumo

Evolution of surface morphology and optical characteristics of 1.3-mu m In0.5Ga0.5As/GaAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) are investigated by atomic force microscopy (AFM) and photoluminescence (PL). After deposition of 16 monolayers (ML) of In0.5Ga0.5As, QDs are formed and elongated along the [110] direction when using sub-ML depositions, while large size InGaAs QDs with better uniformity are formed when using ML or super-ML depositions. It is also found that the larger size QDs show enhanced PL efficiency without optical nonlinearity, which is in contrast to the elongated QDs.

National Natural Science Foundation of China 10734060 National Basic Research Program of China 2006CB921504 This work was supported by the National Natural Science Foundation of China (No. 10734060) and the National Basic Research Program of China (No. 2006CB921504).

Identificador

http://ir.semi.ac.cn/handle/172111/7137

http://www.irgrid.ac.cn/handle/1471x/63306

Idioma(s)

英语

Fonte

Wei QX ; Ren ZW ; He ZH ; Niu ZC .Evolution of surface morphology and photoluminescence characteristics of 1.3-mu m In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy ,CHINESE OPTICS LETTERS,2009 ,7(1):52-55

Palavras-Chave #光电子学 #1.3 MU-M #ROOM-TEMPERATURE #OPTICAL-PROPERTIES #CAP LAYER #GAAS #DEPOSITION
Tipo

期刊论文