Application of sample-and-hold circuits in the laser frequency-shifting

A new method of frequency-shifting for a diode laser is realized. Using a sample-and-hold circuit, the error signal can be held by the circuit during frequency shifting. It can avoid the restraint of locking or even lock-losing caused by the servo circuit when we input a step-up voltage into piezoelectric transition (PZT) to achieve laser frequency-shifting.

适合于小飞机防撞系统的机载小型激光测距仪

报道了一种重量轻、功耗低、适合于小飞机防撞系统应用的小型激光测距仪。系统基于脉冲激光测距原理，采用905nm半导体脉冲激光器、电感升压式偏置高压电源和可编程逻辑器件（PLD），研制出重量不大于100g，功耗不大于625mW，测量范围100m，盲区3．0m，分辨率±1m的机载小型激光测距仪。实验测试结果表明，其各项技术性能指标符合无人驾驶小飞机防撞系统的应用要求。

In situ synthesis of ZrO2/ZrW2O8 composites with near-zero thermal expansion

In this paper, ZrO2 and WO3 were used as the raw materials to prepare ZrO2/ZrW2O8 composites by in situ reaction method and the thermal expansion property of the composites was studied. This novel method included a heating step up to 1473 K for 24 h, which combines the synthesizing and sintering of ZrW2O8. The result indicates that ZrO2/ZrW2O8 composite shows near-zero thermal expansion when the weight ratio of ZrO2 and WO3 is 2.5:1. Compared with composites prepared previously by non-reactive sintering of ZrO2 and ZrW2O8, the composites show higher relative density and lower porosity.

Surface Disorder of GaN Irradiated by Highly Charged Arq+-Ions

Surface damage of gallium nitride films irradiated by Arq+ (6 ≤ q ≤ 16) ions at room temperature is studied by the atomic force microscopy. It is found that when charge state exceeds a threshold value, significant swelling was turned into obvious erosion in the irradiated region. The surface change of the irradiated region strongly depends on the charge state and ion fluence. On the other hand, surface change is less dependent on the kinetic energy nearly in the present experimental range (120 keV≤ Ek ≤ 220 keV). For q ≤ 14, surface of the irradiated region iscovered with an amorphous layer, rough and bulgy. A step-up appears between the irradiated and un-irradiated region. Moreover, the step height and the surface roughness are functions of the ion dose and charge state...

Surface erosion of GaN bombarded by highly charged Pb-208(q+)-Ions

Surface change of gallium nitride specimens after bombardment by highly charged Pbq+-ions (q = 25, 35) at room temperature is studied by means of atomic force microscopy. The experimental results reveal that the surface of GaN specimens is significantly etched and erased. An unambiguous step-up is observed. The erosion depth not only strongly depends on the charge state of ions, but also is related to the incident angle of Pbq+-ions and the ion dose. The erosion depth of the specimens in 60 incidence (tilted incidence) is significantly deeper than that of the normal incidence. The erosion behaviour of specimens has little dependence on the kinetic energy of ion (E-k = 360, 700 keV). On the other hand, surface roughness of the irradiated area is obviously decreased due to erosion compared with the un-irradiated area. A fiat terrace is formed.

Performance Enhancement of Polymer Light-Emitting Diodes by Using Ultrathin Fluorinated Polyimide Modifying the Surface of Poly(3,4-ethylene dioxythiophene):Poly(styrenesulfonate)

Herein, an insulating fluorinated polyimide (F-PI) is utilized as an ultrathin buffer layer of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) in polymer light-emitting diodes to enhance the device performance. The selective solubility of F-PI in common solvents avoids typical intermixing interfacial problems during the sequential multilayer spin-coating process. Compared to the control device, the F-PI modification causes the luminous and power efficiencies of the devices to be increased by a factor of 1.1 and 4.7, respectively, along with almost 3-fold device lifetime enhancement. Photovoltaic measurement, single-hole devices, and X-ray photoelectron spectroscopy, are utilized to investigate the underlying, mechanisms, and it is found that the hole injection barrier is lowered owing to the interactions between the PEDOT:PSS and F-PI. The F-PI modified PEDOT:PSS layer demonstrates step-up ionization potential profiles from the intrinsic bulk PEDOT:PSS side toward the F-PI-modified PEDOT:PSS surface, which facilitate the hole injection.

Step Structure in Cold-Rolled Deformed Nanocrystalline Nickel

The microstructure characteristic of the cold-rolled deformed nanocrystalline nickel metal is studied by transmission electron microscopy. The results show that there are step structures nearby the grain boundary (GB), and the contrast of stress field in front of the step corresponds to the step in the shape. It is indicated that the interaction between twins and dislocations is not a necessary condition to realizing the deformation. In the later stage of the deformation when the grain size becomes about 100nm, the deformation can depend upon the moving of the boundary of the stack faults (SFs) which result from the partial dislocations emitted from GBs. However, when the size of SFs grows up, the local internal stress which is in front of the step gradually becomes higher. When this stress reaches a critical value which stops the gliding of the partial dislocations, the SFs will stop to grow up and leave a step structure behind.

Classified one-step modified signed-digit arithmetic and its optical implementation

Based on the two-step modified signed-digit (MSD) algorithm, we present a one-step algorithm for the parallel addition and subtraction of two MSD numbers. This algorithm is reached by classifying the three neighboring digit pairs into 10 groups and then making a decision on the groups. It has only a look-up truth table, and can be further formulated by eight computation rules. A joint spatial encoding technique is developed to represent both the input data and the computation rules. Furthermore, an optical correlation architecture is suggested to implement the MSD adder in parallel. An experimental demonstration is also given. (C) 1996 Society of Photo-Optical instrumentation Engineers.

Photoluminescence from heterogeneous SiGe/Si nanostructures prepared via a two-step approach strategy

A two-step approach of preparation for SiGe/Si heterogeneous nanostructures, which combined with ultra-high vacuum chemical deposition and electrochemical anodization techniques, is demonstrated. Uniformly distributed nanostructures with a quite uniform distribution of size and morphology are obtained. A strong room-temperature photoluminescence from the nanostructures was observed with a narrow full-width at half-maximum of around 110 meV. The possible origins of the two main peaks at around 1.6 and 1.8 eV have been discussed in detail. The two-step approach is proved to be a promising method to fabricate new Si-based optoelectronic materials. (C) 2009 Elsevier B.V. All rights reserved.

Silicon nanopore array structure using porous anodic alumina

A free-standing, bidirectionally permeable and ultra-thin (500-1000 nm) porous anodic alumina membrane was fabricated using a two-step aluminium anodization process, which was then placed on top of a silicon film as an etching mask. The pattern was transferred to silicon using dry-etching technology, and the silicon nanopore array structure was formed. The factors which afflct the pattern transfer process are discussed. Observation of the nanopatterned sample under a scanning electron microscope shows that the structure obtained by this method is made up of uniform and highly ordered holes, which attains to 125 nm depth. The photoluminescence spectrum from the nanopatterned sample,the surface of which has been thermal-oxidized, shows that the the luminesce is evidently enhanced, the mechanism of which is based on the normally weak TO phonon assisted bandgap light-emission process, and the physical reasons that underlic the enhancement have been analyzed. The PL results do show an attractive optical characteristic, which provides a promising pathway to achieve efficient light emission from silicon.

Electric Field Control of Interface Related Spin Splitting in Step Quantum Wells

Spin splitting of the AlyGa1-yAs/GaAs/AlxGa1-xAs/AlyGa1-yAs (x not equal y) step quantum wells (QWs) has been theoretically investigated with a model that includes both the interface and the external electric field contribution. The overall spin splitting is mainly determined by the interface contribution, which can be well manipulated by the external electric field. In the absence of the electric field, the Rashba effect exists due to the internal structure inversion asymmetry (SIA). The electric field can strengthen or suppress the internal SIA, resulting in an increase or decrease of the spin splitting. The step QW, which results in large spin splitting, has advantages in applications to spintronic devices compared with symmetrical and asymmetrical QWs. Due to the special structure design, the spin splitting does not change with the external electric field.

Spin splitting of conduction subbands in Al0.3Ga0.7As/GaAs/AlxGa1-x As/Al0.3Ga0.7As step quantum wells

By means of the transfer matrix technique, interface-induced Rashba spin splitting of conduction subbands in Al0.3Ga0.7As/GaAs/AlxGa1-xAs/Al0.3Ga0.7As step quantum wells which contain internal structure inversion asymmetry introduced by the insertion of AlxGa1-xAs step potential is investigated theoretically in the absence of electric field and magnetic field. The dependence of spin splitting on the well width, step width and Al concentration is investigated in detail. We find that the sign of the first excited subband spin splitting changes with well width and step width, and is opposite to that of the ground subband under certain conditions. The sign and strength of the spin splitting are shown to be sensitive to the components of the envelope function at three interfaces. Copyright (C) EPLA, 2009

Harmonic Millimeter Wave Generation and Frequency Up-Conversion Using Optical Injection Locking and Brillouin Selective Sideband Amplification

Harmonic millimeter wave (mm-wave) generation and frequency up-conversion are experimentally demonstrated using optical injection locking and Brillouin selective sideband amplification (BSSA) induced by stimulated Brillouin scattering in a 10-km single-mode fiber. By using this method, we successfully generate third-harmonic mm-wave at 27 GHz (f(LO) - 9 GHz) with single sideband (SSB) modulation and up-convert the 2GHz intermediate frequency signal into the mm-wave band with single mode modulation of the SSB modes. In addition, the mm-wave carrier obtains more than 23 dB power gain due to the BSSA. The transmission experiments show that the generated mm-wave and up-converted signals indicate strong immunity against the chromatic dispersion of the fibers.

Effect of a step quantum well structure and an electric-field on the Rashba spin splitting

Spin splitting of conduction subbands in Al_(0.3)Ga_(0.7)As/GaAs/Al_xGa_(1-x)As/Al_(0.3)Ga_(0.7)As step quantum wells induced by interface and electric field related Rashba effects is investigated theoretically by the method of finite difference. The dependence of the spin splitting on the electric field and the well structure, which is controlled by the well width and the step width, is investigated in detail. Without an external electric field, the spin splitting is induced by an in terface related Rashba term due to the built-in structure inversion asymmetry. Applying the external electric field to the step QW, the Rashba effect can be enhanced or weakened, depending on the well structure as well as the direction and the magnitude of the electric field. The spin splitting is mainly controlled by the interface related Rashba term under a negative and a stronger positive electric field, and the contribution of the electric field related Rashba term dominates in a small range of a weaker positive electric field.A method to determine the interface parameter is proposed.The results show that the step QWs might be used as spin switches.

Application of step-scan FTIR to the research of quantum cascade lasers

The principle of step-scan Fourier transform infrared （FTIR） spectroscopy is introduced. Double modulation step-scan FTIR technique is used to obtain the quantum cascade laser＇s stacked emission spectra in the time domain. Optical property and thermal accumulation of devices due to large drive current are analyzed.