Surface Disorder of GaN Irradiated by Highly Charged Arq+-Ions


Autoria(s): 张丽卿; 张崇宏; 杨义涛等
Data(s)

01/03/2009

Resumo

Surface damage of gallium nitride films irradiated by Arq+ (6 ≤ q ≤ 16) ions at room temperature is studied by the atomic force microscopy. It is found that when charge state exceeds a threshold value, significant swelling was turned into obvious erosion in the irradiated region. The surface change of the irradiated region strongly depends on the charge state and ion fluence. On the other hand, surface change is less dependent on the kinetic energy nearly in the present experimental range (120 keV≤ Ek ≤ 220 keV). For q ≤ 14, surface of the irradiated region iscovered with an amorphous layer, rough and bulgy. A step-up appears between the irradiated and un-irradiated region. Moreover, the step height and the surface roughness are functions of the ion dose and charge state...

Identificador

http://ir.impcas.ac.cn/handle/113462/128

http://www.irgrid.ac.cn/handle/1471x/127482

Idioma(s)

英语

Fonte

张丽卿;张崇宏;杨义涛等.Surface Disorder of GaN Irradiated by Highly Charged Arq+-Ions,Chinese Physics Letter,2009,26(3):036101

Palavras-Chave #材料科学
Tipo

期刊论文