Performance Enhancement of Polymer Light-Emitting Diodes by Using Ultrathin Fluorinated Polyimide Modifying the Surface of Poly(3,4-ethylene dioxythiophene):Poly(styrenesulfonate)
Data(s) |
2009
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Resumo |
Herein, an insulating fluorinated polyimide (F-PI) is utilized as an ultrathin buffer layer of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) in polymer light-emitting diodes to enhance the device performance. The selective solubility of F-PI in common solvents avoids typical intermixing interfacial problems during the sequential multilayer spin-coating process. Compared to the control device, the F-PI modification causes the luminous and power efficiencies of the devices to be increased by a factor of 1.1 and 4.7, respectively, along with almost 3-fold device lifetime enhancement. Photovoltaic measurement, single-hole devices, and X-ray photoelectron spectroscopy, are utilized to investigate the underlying, mechanisms, and it is found that the hole injection barrier is lowered owing to the interactions between the PEDOT:PSS and F-PI. The F-PI modified PEDOT:PSS layer demonstrates step-up ionization potential profiles from the intrinsic bulk PEDOT:PSS side toward the F-PI-modified PEDOT:PSS surface, which facilitate the hole injection. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Zhang BH;Li WM;Yang JW;Fu YY;Xie ZY;Zhang SB;Wang LX.Performance Enhancement of Polymer Light-Emitting Diodes by Using Ultrathin Fluorinated Polyimide Modifying the Surface of Poly(3,4-ethylene dioxythiophene):Poly(styrenesulfonate),JOURNAL OF PHYSICAL CHEMISTRY C ,2009,113(18):7898–7903 |
Palavras-Chave | #MICRO-RAMAN SPECTROSCOPY #HOLE-INJECTION #CONDUCTING-POLYMER #WORK FUNCTION #SULFONATE) #DEVICES #POLY(9 #EXTRACTION #MORPHOLOGY #EFFICIENT #9-DIOCTYLFLUORENE) |
Tipo |
期刊论文 |