Surface erosion of GaN bombarded by highly charged Pb-208(q+)-Ions


Autoria(s): Zhang, LQ; Zhang, CH; Yang, YT; Yao, CF; Li, BS; Jin, YF; Sun, YM; Song, SJ
Data(s)

2008

Resumo

Surface change of gallium nitride specimens after bombardment by highly charged Pbq+-ions (q = 25, 35) at room temperature is studied by means of atomic force microscopy. The experimental results reveal that the surface of GaN specimens is significantly etched and erased. An unambiguous step-up is observed. The erosion depth not only strongly depends on the charge state of ions, but also is related to the incident angle of Pbq+-ions and the ion dose. The erosion depth of the specimens in 60 incidence (tilted incidence) is significantly deeper than that of the normal incidence. The erosion behaviour of specimens has little dependence on the kinetic energy of ion (E-k = 360, 700 keV). On the other hand, surface roughness of the irradiated area is obviously decreased due to erosion compared with the un-irradiated area. A fiat terrace is formed.

Identificador

http://ir.impcas.ac.cn/handle/113462/5599

http://www.irgrid.ac.cn/handle/1471x/132393

Idioma(s)

英语

Fonte

Zhang, LQ,Zhang, CH,Yang, YT,et al. Surface erosion of GaN bombarded by highly charged Pb-208(q+)-Ions[J]. CHINESE PHYSICS LETTERS,2008,25(7):2670-2673.

Palavras-Chave #IMPLANTED GAN #DAMAGE
Tipo

期刊论文