Electric Field Control of Interface Related Spin Splitting in Step Quantum Wells


Autoria(s): Hao YF; Chen YH; Hao GD; Wang ZG
Data(s)

2009

Resumo

Spin splitting of the AlyGa1-yAs/GaAs/AlxGa1-xAs/AlyGa1-yAs (x not equal y) step quantum wells (QWs) has been theoretically investigated with a model that includes both the interface and the external electric field contribution. The overall spin splitting is mainly determined by the interface contribution, which can be well manipulated by the external electric field. In the absence of the electric field, the Rashba effect exists due to the internal structure inversion asymmetry (SIA). The electric field can strengthen or suppress the internal SIA, resulting in an increase or decrease of the spin splitting. The step QW, which results in large spin splitting, has advantages in applications to spintronic devices compared with symmetrical and asymmetrical QWs. Due to the special structure design, the spin splitting does not change with the external electric field.

National Basic Research Program of China 2006CB921607 2006CB604908 National Natural Science Foundation of China 60625402

Identificador

http://ir.semi.ac.cn/handle/172111/7089

http://www.irgrid.ac.cn/handle/1471x/63282

Idioma(s)

英语

Fonte

Hao YF ; Chen YH ; Hao GD ; Wang ZG .Electric Field Control of Interface Related Spin Splitting in Step Quantum Wells ,CHINESE PHYSICS LETTERS,2009 ,26(7):Art. No. 077104

Palavras-Chave #半导体化学 #CONDUCTION SUBBANDS #INVERSION ASYMMETRY #HETEROSTRUCTURES #RASHBA #LAYERS #INAS
Tipo

期刊论文