Phase unwrapping based on branch cut placing and reliability ordering

A new 2-D quality-guided phase-unwrapping algorithm, based on the placement of the branch cuts, is presented. Its framework consists of branch cut placing guided by an original quality map and reliability ordering performed on a final quality map. To improve the noise immunity of the new algorithm, a new quality map, which is used as the original quality map to guide the placement of the branch cuts, is proposed. After a complete description of the algorithm and the quality map, several wrapped images are used to examine the effectiveness of the algorithm. Computer simulation and experimental results make it clear that the proposed algorithm works effectively even when a wrapped phase map contains error sources, such as phase discontinuities, noise, and undersampling. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

Phase unwrapping based on branch cut placing and reliability ordering

A new 2-D quality-guided phase-unwrapping algorithm, based on the placement of the branch cuts, is presented. Its framework consists of branch cut placing guided by an original quality map and reliability ordering performed on a final quality map. To improve the noise immunity of the new algorithm, a new quality map, which is used as the original quality map to guide the placement of the branch cuts, is proposed. After a complete description of the algorithm and the quality map, several wrapped images are used to examine the effectiveness of the algorithm. Computer simulation and experimental results make it clear that the proposed algorithm works effectively even when a wrapped phase map contains error sources, such as phase discontinuities, noise, and undersampling. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

Diode-pumped continuous wave and Q-switched operation of a c-cut Tm,Ho:YAlO3 laser

We report on a diode-pumped, cryogenic and room temperature operation of a Tm,Ho:YAlO3 (c-cut) laser. In a temperature of 77 K, an optical-optical conversion efficiency of 27% and a slope efficiency of 29% were achieved with the maximum continuous-wave (CW) output power of 5.0 W at 2.13 mu m. Acousto-optic switched operation was performed at pulse repetition frequency (PRF) from 1 kHz to 10 kHz, the highest pulse energy of 3.3 mJ in a pulse duration of 40 ns was obtained. In room temperature (RT), the maximum CW power of Tm,Ho:YAlO3 laser was 160 mW with a slope efficiency of 11% corresponding to the absorbed pump power. (C) 2008 Optical Society of America.

Metamorphic InGaAs p-i-n Photodetectors with 1.75 mu m Cut-Off Wavelength Grown on GaAs

Top-illuminated metamorphic InGaAs p-i-n photodetectors (PDs) with 50% cut-off wavelength of 1.75 mu m at room temperature are fabricated on GaAs substrates. The PDs are grown by a solid-source molecular beam epitaxy system. The large lattice mismatch strain is accommodated by growth of a linearly graded buffer layer to create a high quality virtual InP substrate indium content in the metamorphic buffer layer linearly changes from 2% to 60%. The dark current densities are typically 5 x 10(-6) A/cm(2) at 0 V bias and 2.24 x 10(-4) A/cm(2) at a reverse bias of 5 V. At a wavelength of 1.55 mu m, the PDs have an optical responsivity of 0.48 A/W, a linear photoresponse up to 5 mW optical power at -4 V bias. The measured -3 dB bandwidth of a 32 mu m diameter device is 7 GHz. This work proves that InGaAs buffer layers grown by solid source MBE are promising candidates for GaAs-based long wavelength devices.