Metamorphic InGaAs p-i-n Photodetectors with 1.75 mu m Cut-Off Wavelength Grown on GaAs
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2010
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| Resumo |
Top-illuminated metamorphic InGaAs p-i-n photodetectors (PDs) with 50% cut-off wavelength of 1.75 mu m at room temperature are fabricated on GaAs substrates. The PDs are grown by a solid-source molecular beam epitaxy system. The large lattice mismatch strain is accommodated by growth of a linearly graded buffer layer to create a high quality virtual InP substrate indium content in the metamorphic buffer layer linearly changes from 2% to 60%. The dark current densities are typically 5 x 10(-6) A/cm(2) at 0 V bias and 2.24 x 10(-4) A/cm(2) at a reverse bias of 5 V. At a wavelength of 1.55 mu m, the PDs have an optical responsivity of 0.48 A/W, a linear photoresponse up to 5 mW optical power at -4 V bias. The measured -3 dB bandwidth of a 32 mu m diameter device is 7 GHz. This work proves that InGaAs buffer layers grown by solid source MBE are promising candidates for GaAs-based long wavelength devices. Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-22T13:47:14Z No. of bitstreams: 1 Metamorphic InGaAs p-i-n Photodetectors with 1.75 mu m Cut-Off Wavelength Grown on GaAs .pdf: 473480 bytes, checksum: 584a72e04e7a4f1812d9e23acf8ee9b6 (MD5) Approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-04-22T14:11:54Z (GMT) No. of bitstreams: 1 Metamorphic InGaAs p-i-n Photodetectors with 1.75 mu m Cut-Off Wavelength Grown on GaAs .pdf: 473480 bytes, checksum: 584a72e04e7a4f1812d9e23acf8ee9b6 (MD5) Made available in DSpace on 2010-04-22T14:11:54Z (GMT). No. of bitstreams: 1 Metamorphic InGaAs p-i-n Photodetectors with 1.75 mu m Cut-Off Wavelength Grown on GaAs .pdf: 473480 bytes, checksum: 584a72e04e7a4f1812d9e23acf8ee9b6 (MD5) Previous issue date: 2010 Hi-Tech Research and Development Program of China 2007AA032421；National Basic Research Program of China 2006CB302802 ；National Natural Foundation of China 60876039 其它 Hi-Tech Research and Development Program of China 2007AA032421；National Basic Research Program of China 2006CB302802 ；National Natural Foundation of China 60876039 |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Zhu B (Zhu Bin), Han Q (Han Qin), Yang XH (Yang Xiao-Hong), Ni HQ (Ni Hai-Qiao), He JF (He Ji-Fang), Niu ZC (Niu Zhi-Chuan), Wang X (Wang Xin), Wang XP (Wang Xiu-Ping), Wang J (Wang Jie).Metamorphic InGaAs p-i-n Photodetectors with 1.75 mu m Cut-Off Wavelength Grown on GaAs .CHINESE PHYSICS LETTERS,2010,27(3):Art. No. 038504 |
| Palavras-Chave | #光电子学 #MOLECULAR-BEAM EPITAXY #BUFFER LAYERS #DARK CURRENT #PHOTODIODES #LASERS |
| Tipo |
期刊论文 |
