InAs/ln(0.52)Al(0.48)As quantum wire structure with the specific layer-ordering orientation on InP(001)

Quantum wires were formed in the 6-period InAs/In0.52Al0.48As structure on InP(0 0 1) grown by molecular beam epitaxy. The structure was characterized with transmission electron microscopy. It was found that the lateral periodic compositional modulation in the QWR array was in the [1 (1) over bar 0] direction and layer-ordered along the specific orientation deviating from the [0 0 1] growth direction by about 30 degrees. This deviating angle is consistent with the calculation of the distribution of elastic distortion around quantum wires in the structure using the finite element technique. (C) 1999 Elsevier Science B.V. All rights reserved.

1.48 微米掺铒光纤放大器泵浦

于G批量导入至Hzhangdi

The radio counter-jet of the QSO 3C 48

We present multi- frequency radio observational results of the quasar 3C 48. The observations were carried out with the Very Large Array ( VLA) at five frequencies, 0.33, 1.5, 4.8, 8.4, and 22.5 GHz, and with the Multi- Element Radio Linked Interferometer Network ( MERLIN) at the two frequencies of 1.6 and 5 GHz. The source shows a one- sided jet to the north within 1", which then extends to the northeast and becomes diffuse. Two bright components ( N2 and N3), containing most of the flux density, are present in the northern jet. The spectral index of the two components is alpha(N2) similar to -0.99 +/- 0.12 and alpha(N3) similar to - 0.84 +/- 0.23 ( S proportional to nu(alpha)). Our images show the presence of an extended structure surrounding component N2, suggestive of strong interaction between the jet and the interstellar medium ( ISM) of the host galaxy. A steep- spectrum component, labelled S, located 0.25 " southwest to the flat- spectrum component which could be the core of 3C 48, is detected at a significance of > 15 sigma. Both the location and the steepness of the spectrum of component S suggest the presence of a counter- jet in 3C 48.

MOCVD生长Al_(0.48)Gao_(0.52)N/Al_(0.54)Ga_(0.36)N多量子阱的结构和光学特性

采用金属有机物化学气相淀积(MOCVD)技术,在蓝宝石衬底上生长了Al_(0.48)Gao_(0.52)N/Al_(0.54)Ga_(0.36)N多量子阱(MQWs)结构.通过双晶X射线衍射(DCXRD)、原子力显微镜(AFM)和阴极荧光(CL)等测试技术,分别对样品的结构和光学特性进行了表征.在DCXRD图谱中,可以观察到明显的MQWs衍射卫星峰,通过拟和,MQWs结构中阱和垒的厚度分别为2.1和9.4 nm,Al组分分别为0.48和0.54.在AFM表面形貌图上,可以观察到清晰的台阶流,表明MQWs获得了二维生长;与此同时,MQWs结构存在一些裂缝,主要原因为AlGaNMQWs结构和下层GaN层间存在很大的应力.CL测试表明,AlGaN MQWs结构的发光波长为295 nm,处于深紫外波段,同时观察到处于蓝光、绿光波段的缺陷发光.

In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As量子阱中的正磁电阻效应

在低温强磁场条件下,对In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As量子阱中的二维电子气进行了磁输运测试.在低磁场范围内观察到正磁电阻效应,在高磁场下这一正磁电阻趋于饱和,分析表明这一现象与二维电子气中的电子占据两个子带有关.在考虑了两个子带之间的散射效应后,通过分析低磁场下的正磁电阻,得到了每个子带电子的迁移率,结果表明第二子带电子的迁移率高于第一子带电子的迁移率.进一步分析表明,这主要是由两个子带之间的散射引起的.

两个子带占据的In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As量子阱中填充因子的变化规律

研究了低温(1.5K)和强磁场(0-13T)条件下,InP基In_(0.53)Ga_(0.47)As/In_(0.52)A_(l0.48)As量子阱中电子占据两个子带时填充因子随磁场的变化规律.结果表明,在电子自旋分裂能远小于朗道能级展宽的情况下,如果两个子带分裂能是朗道分裂能的整数倍时,即⊿E_(21)=κ*ω_c(其中κ为整数),填充因子为偶数;当两个子带分裂能为朗道分裂能的半奇数倍时,即⊿E_(21)=(2κ+1*ω/2,填充因子出现奇数.

In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As量子阱中双子带占据的二维电子气的输运特性

研究了不同沟道厚度的In_(0.53) Ga_(0.47)As/In_(0.52)Al_(0.48)As量子阱中双子带占据的二维电子气的输运特性.在考虑了两个子带电子之间的磁致子带间散射效应后,通过分析Shubnikov-de Haas振荡一阶微分的快速傅里叶变换结果,获得了每个子带电子的浓度、输运散射时间、量子散射时间以及子带之间的散射时间.结果表明,对于所研究的样品,第一子带电子受到的小角散射更强,这与第一子带电子受到了更强的电离杂质散射有关.

双δ掺杂In_(0.65)Ga_(0.35)As/In_(0.52)Al_(0.48)As赝型高迁移率晶体管材料子带电子特性研究

研究了基于InP基的In_(0.65)Ga_(0.35)As/In_(0.52)Al_(0.48)As赝型高迁移率晶体管材料中纵向磁电阻的Shubniko-de Haas (SdH)振荡效应和霍耳效应,通过对纵向磁电阻SdH振荡的快速傅里叶变换分析,获得了各子带电子的浓度,并因此求得了各子带能级相对于费米能级的位置.联立求解Schrodinger方程和Poisson方程,自洽计算了样品的导带形状、载流子浓度分布以及各子带能级和费米能级位置.理论计算和实验结果很好符合.实验和理论计算均表明,势垒层的掺杂电子几乎全部转移到了量子阱中,转移率在95%以上.

1.48μm掺铒光纤放大器泵源

用P型InP衬底新月型(PBC)结构制备1.48μm大功率激光,与单模光纤耦合输出功率大于40mW.

1.48μm掺饵光纤放大器泵源

于2010-11-23批量导入