Gamma -> Epsilon Martensite Transformation and Twinning Deformation in fcc Cobalt During Surface Mechanical Attrition Treatment

The deformation microstructure of face-centered cubic cobalt subjected to surface mechanical attrition treatment was studied as a function of strain levels. Strain-induced gamma --> epsilon transformation and twinning deformation were evidenced by transmission electron microscopy and were found to progress continuously in ultrafine and nanocrystalline grains as the strain increased.

Strain Rate Dependence of Plastic Flow in Ce-based Bulk Metallic Glass During Nanoindentation

The strain rate dependence of plastic deformation of Ce60Al15CU10Ni15 bulk metallic glass was studied by nanoindentation. Even though the ratio of room temperature to the glass transition temperature was very high (0.72) for this alloy, the plastic deformation was dominated by shear banding under nanoindentation. The alloy exhibited a critical loading rate dependent serrated flow feature. That is, with increasing loading rate, the alloy exhibited a transition from less prominent serrated flow to pronounced serrated flow during continuous loading but from serrated to smoother flow during stepped loading.

低能离子束沉积制备GaAs:Gd的研究

对室温条件下用低能离子束沉积得到的 Ga As∶ Gd样品 ,借助 X射线衍射 (XRD)和高分辨 X射线衍射 (HR-XRD)进行了结构分析 ,结果表明没有出现新的衍射峰 ,并且摇摆曲线的形状与 Gd的注入计量密切相关 .运用 X光电子能谱仪对比分析了 Gd注入后 ,衬底中主要元素 Ga2 p和 As3d的化学位移 ,以及不同计量的样品中注入的Gd4 d芯能级束缚能的变化 ,并分析了铁磁性产生的可能原因 .

低能离子束制备(Ga,Gd,As)薄膜

室温条件下 ,用离子束外延设备制备 ( Ga,Gd,As)样品 ,X射线衍射 ( XRD)结果表明除了 Ga As衬底峰 ,没有发现其他新相的衍射峰。俄歇电子能谱 ( AES)分析了样品中元素随深度的变化 ,不同样品中元素的分布有着不同的特点。并运用原子力显微镜 ( AFM)研究了样品表面的形貌特点 ,表明样品表面的粗糙度与 Gd注入过程中在样品表面沉积的多少有关。运用交变梯度磁强计 ( AGM)对薄膜进行磁性分析 ,结果表明有的样品在室温条件下出现铁磁性 ,但金属钆本身具有室温铁磁性 ,因而需要进一步分析。

低能离子束方法制备Fe组分渐变的Fe-Si薄膜

利用质量分离的低能离子束技术 ,获得了Fe组分渐变的Fe Si薄膜。利用俄歇电子能谱法 (AES)、X射线衍射法 (XRD)以及X射线光电子能谱法 (XPS)测试了薄膜的组分、结构特性。测试结果表明 ,在室温下制备的Fe Si薄膜呈非晶态。非晶薄膜在 40 0℃下退火 2 0min后晶化 ,没有Fe的硅化物相形成。退火后Fe Si薄膜的Fe组分从表面向内部逐渐降低。

低能离子束方法制备重掺杂Fe的Si∶Fe固溶体

利用质量分离的低能离子束方法 ,以离子能量为 1 0 0 0 e V,剂量为 3× 1 0 1 7cm- 2 ,室温下往 p型 Si(1 1 1 )单晶衬底注入 Fe离子 ,注入的样品在 4 0 0℃真空下进行热处理 .俄歇电子能谱法 (AES)对原位注入样品深度分析表明 Fe离子浅注入到 p型 Si单晶衬底 ,注入深度约为 4 2 nm.X射线衍射法 (XRD)对热处理样品结构分析发现只有 Si衬底的衍射峰 ,没有其他新相 .X射线光电子能谱法 (XPS)对热处理样品表面分析发现 Fe2 p束缚能对应于单质 Fe的峰 ,没有形成 Fe的硅化物 .这些结果表明重掺杂 Fe的 Si∶ Fe固溶体被制备 .电化学 C- V法测量了热处理后样品载流子浓度随深度的分布 ,发现 Fe重掺杂 Si致使 Si的导电类型从 p型转为 n型 ,Si∶ Fe固溶体和 Si衬底形成 pn结 ,具有整流特性

离子束淀积方法制备GdSi_2薄膜

采用离子束淀积方法制备了单相 Gd Si2 薄膜 .用俄歇电子谱仪对样品的成分进行了分析 ,用 X射线衍射方法分析了样品的结构 ,并用扫描电子显微镜观察了样品的表面形貌 .X射线衍射分析发现在 4 0 0℃沉积的样品中仅存在正交的 Gd Si2 相 .样品在氩气氛中 35 0℃ ,30 m in退火处理后 ,Gd Si2 相衍射峰的半高宽变窄 ,说明经过退火处理 ,Gd Si2 的晶体质量变得更好

压电驱动的载荷比拟方法

随着压电材料与结构大量进入航空航天结构控制领域,针对大型复杂结构的压电驱动计算与优化对计算方法提出更高的要求.本文提出并验证了压电驱动载荷比拟方法.使用该方法可以大大降低有限元模型规模,避免多压电铺层面内电压定义困难、简化材料参数在材料主向与单元主向之间的复杂转换,特别适合于结构强度工程人员进行压电驱动的振动与形状控制设计.

等离子体效应对碳的类氢离子能级的影响

通过在狄拉克方程中考虑德拜-休克尔（Debye-Hückel）屏蔽势，研究了类氢离子C^5＋低能级能量1s（^2S1／2），2s（^2S1／2），2p（^2P1／2和^2P3／2）随等离子体电子温度及电子密度的变化规律，计算得到类氢离子C^5＋能级能量及能级电离势随等离子体环境的变化关系。同时，拟合得到了基于德拜-休克尔屏蔽势下相当好的束缚态能级能量随等离子体环境变化的解析公式，利用该公式得到了类氢离子C^5＋相应各能级发生压致电离的临界电子密度，其结果与其它文献比有很好的可比性。结果表明：束缚态能级能量

Analysis of dispersion compensation for position-dependence in externally modulated CATV lightwave systems by using chirped fiber grating

The dispersion compensation characteristics of the chirped fiber grating (CFG) for different dispersion compensation positions are analyzed in externally modulated cable television (CATV) lightwave system and the analytic expression of the composite second order (CSO) distortion is derived. The analyses give a reasonable explanation for the position-dependent effect of CFG dispersion compensator, which was found in practical systems. Moreover, the theoretical result is also verified by an experiment. It is believed that the theory will be helpful in designing optical CATV fiber links with nodes at proper positions both for intensity amplification and dispersion compensation.

一种新型光纤光栅无啁啾调谐方法

分析了基于弹性梁的光纤光栅调谐原理，引入了轴向直变传递系数的概念，提出利用部分纯弯曲调谐方法，可实现光纤光栅宽带无啁嗽调谐。在实验中，利用部分纯弯曲调谐法，获得了20．1nm的光纤光栅无啁嗽调谐范围，调谐线性拟合度为0．9996，调谐过程中光栅反射谱的3dB带宽变化小于0．07nm，峰值反射率变化小于0．2dB，基本无啁嗽现象产生，实验结果和理论分析一致。

Encoded cell grating array in anti-counterfeit technology

The dot matrix hologram (DMH) has been widely used in anti-counterfeiting label. With the same technology and cell array configuration, we can encode to the incidence beam. These codes can be some image matrix grating with different grating gap and different grating orientation. When the multi-level phase diffractive grating is etched, the incidence beam on the cell appears as an encoding image. When the encoded grating and DMH are used in the same label synchronously, the technology of multi-encoded grating array enhances the anti-counterfeit ability.

Investigation of laser-induced damage on multi-layer dielectric gratings

We investigate mechanisms of laser induced damage thresholds (LIDTs) of multi-layer dielectric gratings (AIDG,). It is found that the laser damage thresholds of MDGs and unstructured dielectric multi-layer coatings (the substrate of MDG) are 3.15J/cm(2) and 9.32 J/cm(2), respectively, at 1064nm (12ns) with the Littrow angle 51.2 degrees and the TEM00 mode. The laser-induced damage mechanism of multi-layer dielectric is presented with the analysis of the following factors: The dominant factor is the pollution on the corrugated surface, which is induced by the complex manufacture process of multi-layer dielectric gratings; another is the electric field distribution along the corrugated surface. The third reason is due to the reduction in stoichiometry of oxide films, resulting from the manufacture process of etching.