Electron tunneling through double magnetic barriers on the surface of a topological insulator

We study electron tunneling through a planar magnetic and electric barrier on the surface of a three-dimensional topological insulator. For the double barrier structures, we find (i) a directional-dependent tunneling which is sensitive to the magnetic field configuration and the electric gate voltage, (ii) a spin rotation controlled by the magnetic field and the gate voltage, (iii) many Fabry-Perot resonances in the transmission determined by the distance between the two barriers, and (iv) the electrostatic potential can enhance the difference in the transmission between the two magnetization configurations, and consequently lead to a giant magnetoresistance. Points (i), (iii), and (iv) are alike with that in graphene stemming from the same linear-dispersion relations.

Magnetic barrier on strained graphene: A possible valley filter

We put forward a two-terminal valley filter based on a bulk graphene sheet under the modulations of both a local perpendicular magnetic field and a substrate strain. When only one of the two modulations is present, no valley polarization can be generated. A combination of the two modulations leads to a different (but not opposite) shifts of the K and K' valleys, which could be utilized to generate a valley-polarized current. The degree of the valley polarization can be tuned by the strain strength and the inclusion of a scalar potential. The valley polarization changes its polarity as the local magnetic field switches its direction.

Rashba electron's ballistic transport in two-dimensional quantum waveguide

The ballistic transport of Rashba electrons in a straight structure in two-dimensional electron gas is studied. It is found that there is no mixing between the wave functions of spin up and spin down states, and the transfer matrix is independent for the spin in every interface. The influence of the structure and Rashba coefficient on the electron transport is investigated. Our results indicate that the transmission probabilities are independent of the sign and magnitude of the Rashba coefficient and it depends on the shape of the structure, especially the stub width. The antiresonance is found, where the quasiconfined state is formed in the center part of the structure.

一种改进的膜片式FBG压力传感器的研究

报道了一种改进的膜片式光纤布拉格光栅（FBG）压力传感器，采用特殊的膜片结构和凸台固定光纤的方式，解决了存以往膜片式光纤压力传感器中存在的栅区应力不均匀问题。对存不同固定方式下栅区的应力状态进行了理论分析。实验结果表明，陔种传感器的灵敏度为M．81nm／MPa，在0．0～0．3MPa的量程内线性度在0．99以上，未出现光谱展宽现象。

GaAs(331)A面InAs自组织纳米结构形貌演化

采用分子束外延方法在CaAs(331)A高指数衬底上制备自对齐InAs纳米线(QWRs)或者三维(3D)岛状结构.InAs纳米线(QWRs)选择性生长在CaAs层的台阶边缘.通过原子力显微镜(AfM)仔细研究了InAs纳米微结构的表面形貌,发现不同的生长条件,包括:衬底温度、生长速率、和InAs层厚度等,对InAa表面形貌有很大的影响.如,低温更容易导致线状纳米微结构的形成,而高温更利于3D岛状结构形成.表面形貌的转变归结于表面能同应变能之间的竞争.

Ⅲ-Ⅴ族半导体全(多)光谱焦平面探测器新进展

近年来,经济社会和武器装备的信息化对半导体光电子学器件提出了更高的要求,无论是国防还是民用工程都需要有自己的关键器件.光电探测器组件作为关键器件之一,世界各国都给予了高度重视,也取得了很大的进展.文中主要介绍了Ⅲ-Ⅴ族半导体全(多)光谱焦平面探测器的研究进展情况,包括量子阱红外探测器(QWIP)、AlGaN紫外焦平面探测器、InGaAs近红外室温焦平面探测器和Sb化物焦平面探测器等.

一种减小GaN基肖特基结构紫外探测器暗电流的方法

提出了一种减小GaN肖特基结构紫外探测器暗电流的方法.该方法是在普通的GaN肖特基结构的表面增加一层薄的p-GaN.模拟计算结果表明,该层p-GaN能增加肖特基势垒高度,从而减小了器件的暗电流,提高了器件性能.进一步的计算还发现,对于P型载流子浓度较高的情况下,只需要很薄的一层p-GaN就能显著增加肖特基势垒高度,对于P型载流子浓度较低的情况下,则需要较厚的一层p-GaN才能有较好的肖特基势垒高度增加效果.

A Novel Three-Section Self-Pulsating DFB Laser with Hybrid Grating

A 1.55μm InGaAsP-InP three-section DFB laser with hybrid grating is fabricated and self-pulsations (SP) with frequencies around 20GHz are observed. The mechanism of SP generation in this device is researched. Furthermore, the important role of the phase tuning section on the SP is investigated.

Smaller Ge Quantum Dots Obtained by ArF Excimer Laser Annealing

Ge self-assembled quantum dots (SAQDs) are grown with a self-assembled UHV/CVD epitaxy system. Then,the as-grown Ge quantum dots are annealed by ArF excimer laser. In the ultra-shot laser pulse duration,～20ns, bulk diffusion is forbidden, and only surface diffusion occurs, resulting in a laser induced quantum dot (LIQD). The diameter of the LIQD is 20～25nm which is much smaller than the as-grown dot and the LIQD has a higher density of about 6 × 10~(10)cm~(-2). The surface morphology evolution is investigated by AFM.

波长解调用偏振无关光纤干涉仪的研究

针对光纤激光传感器信号解调过程中,干涉仪输出干涉条纹可见度受输入光偏振态变化以及两臂单模光纤双折射效应的影响,介绍了一种简单的光纤干涉仪消除偏振衰落技术,通过在Michelson光纤干涉仪上加两个法拉第旋转镜来提高输出条纹可见度。使用琼斯矩阵法对干涉仪系统进行理论计算,证明法拉第旋转镜旋转角度在理想的45°附近时能达到很好的消偏振效果,并通过实验进行了有效地论证。

GaAs/Al_xGa-(1-x)As球形量子点中的电子结构

详细讨论了GaAs/Al_xGa_(1-x)As球形量子点内的单电子束缚能级随量子点半径、Al组分以及外电场的变化规律,并计算了考虑量子点内外电子有效质量不同后对电子能级的修正.另外,用解析和平面波展开两种方法对球形量子点内的电子能级进行了计算,并对计算结果做了比较,发现它们符合的很好.结论和方法为量子点的研究和应用提供了有益的信息和指导.

电子束辐照下单壁碳纳米管的结构不稳定性

利用透射电镜（TEM）原位观察了一端固定一端自由和两端固定的单壁碳纳米管（SWNT（s））在电子束辐照下的结构不稳定性。研究发现,一端固定一端自由的SWNT优先轴向和径向收缩后颈缩,最后形成一个个碳笼紧密相连的收缩结构（“碳笼-碳笼”结构）;两端固定的SWNT仅径向收缩后颈缩,最后形成许多碳笼相连的类似结构。此外,后者在电子束辐照下断开后又会重新粘合起来,表现出很强的表面塑性流变或湿润效应。这些电子束辐照诱导SWNTs非热激活结构不稳定性现象可以用我们最近提出的表面纳米曲率效应和能量束超快诱导软模和点阵失稳进行全新、全面、正确的解释。

脊形InGaAs量子阱激光器的高频响应研究

对MBE生长的InGaAs量子阱（QW）激光器的频率特性进行了研究。研制了InGaAsQW脊波导结构的激光器，通过控制脊的腐蚀深度，得到阈值电流密度为300A／cm~2的激光器，且激光器在常温下工作稳定，输出功率较大，其阈值电流附近3dB带宽超过2GHz。比较了不同电极面积时器件的调制响应，结果表明小面积电极可以有效提高器件的调制带宽。

数据采集片上系统动态性能测试的新方法

提出一种新的方法用于高精度数据采集片上系统的动态性能测试。该方法利用高维空间几何矢量投影的思想，将正弦响应信号向由其各次谐波组成的正交基投影来拟合测试数据，以残差的负熵作为拟合结束的判据，使残差最大限度接近白噪声，避免了传统以残差最小为判据的过拟合问题。实验证明了该方法的有效性。

构成谐振腔的光子晶体端面反射镜的设计

研究了光子晶体作为谐振腔端面反射镜的应用.利用有效折射率法和2D PWE以及2D FDTD方法结合对构成谐振腔的两个端面反射镜进行了设计,得到左端面反射镜的最佳光子晶体晶格周期数为11×11,而右端面反射镜的最佳光子晶体晶格周期数为3×11,这为实验工作提供了良好的理论依据.