Effect of La/Ce ratio on the structure and electrochemical characteristics of La0.7-xCexMg0.3Ni2.8Co0.5 (x=0. 1-0.5) hydrogen storage alloys

The effect of La/Ce ratio on the structure and electrochemical characteristics of the La0.7-xCexMg0.3Ni2.8Co0.5 (x = 0.1, 0.2, 0.3, 0.4, 0.5) alloys has been studied systematically. The result of the Rietveld analyses shows that, except for small amount of impurity phases including LaNi and LaNi2, all these alloys mainly consist of two phases: the La(La, Mg)(2)Ni-9 phase with the rhombohedral PuNi3-type structure and the LaNi5 phase with the hexagonal CaCU5-type structure. The abundance of the La(La, Mg)(2)Ni-9 phase decreases with increasing cerium content whereas the LaNi5 phase increases with increasing Ce content, moreover, both the a and cell volumes of the two phases decrease with the increase of Ce content. The maximum discharge capacity decreases from 367.5 mAh g(-1) (x = 0.1) to 68.3 mAh g(-1) (x = 0.5) but the cycling life gradually improve. As the discharge current density is 1200 mA g(-1), the HRD increases from 55.4% (x = 0.1) to 67.5% (x = 0.3) and then decreases to 52.1% (x = 0.5). The cell volume reduction with increasing x is detrimental to hydrogen diffusion D and accordingly decreases the low temperature dischargeability of the La0.7-xCexMg0.3Ni2.8Co0.5 (x = 0.1-0.5) alloy electrodes.

低压金属有机化合物气相外延生长的 （Al_x Ga_（1-x））_（0 .5 1）In_（0 .49）P折射率测量（英文）

采用测量反射谱方法确定了低压金属有机化合物气相外延生长的GaAs衬底匹配(Al_xGa_(1-x))_(0.51)In_(0.49)P外延材料的折射率。实验中测量的反射谱波长范围为05-2.5μm。在拟合实验数据过程中采用了单振子模型。折射率数据用于分析应变量子阱GaInP/AlGaInP可见光激光二极管波导，计算出的器件远场图与实验数据吻合很好。

Luminescence properties of RP1-xVxO4: A (R=Y, Gd, La; A=Sm3+Er3+ x=0, 0.5, 1) thin films prepared by pechini sol-gel process

Thin film phosphors with compositions of RP1-xVxO4: A (R = Y, Gd, La; A = Sm3+, Et3+; x = 0, 0.5, 1) have been prepared by a Pechini sol-gel process. X-Ray diffraction, atomic force microscopy (AFM), photoluminescence excitation and emission spectra were utilized to characterize the thin film phosphors. The results of XRD showed that a solid solution formed in YVxP1-xO4: A film series from x = 0 to x = 1 with zircon structure, which also held for GdVO4: A film. However, LaVO4: A film crystallized with a different structure, monazite. AFM study revealed that the phosphor films consisted of homogeneous particles ranging from 90 to 400 nm depending on the compositions. Upon short ultraviolet excitation, the films exhibit the characteristic Sm(3+ 4)G(5/2)-H-6(J) (J=5/2, 7/2, 9/2) emission in the red region and Er3+ H-2(11/2), S-4(3/2)-I-4(15/2) emission in the green region, respectively With the increase of x values in YVxP1-xO4: SM3+ (Er3+) films, the emission intensity Of SM3+ (Er3+) increases due to the increase of energy transfer probability from VO43- to Sm3+ (Er3+). Due to the structural effects, the Sm3+ (Er3+) shows similar spectral properties in YVO4 and GdVO4 films, which are much different from those in LaVO4 film.

Hydrothermal synthesis of the two-dimensional coordination polymer {[Fe(phen)(OH)](bta)(0.5)}(n) (phen=1,10-phenanthroline, bta=benzene-1,2,4,5-tetracaboxylate)

The title two-dimensional coordination polymer was synthesised and characterised by X-ray diffraction analysis.

新的稀土锂钒酸盐[Y_(0.5-x)Li_(1.5)VO_4:(Dy~(3+),Eu~(3+))_x]多波段发光

本文首次报道了新的稀土锂钒酸盐Y_(0.5-x)Li_(1.5)VO_4:(Dy~(3+),Eu~(3+))_x多晶粉末的制备,多波段发光和结构. 样品的制备是采用稀土氧化物(Y_2O_3Dy_2O_3和Eu_2O_3)纯度为99.99％与光谱纯的V_2O_5和Li_2CO_3按化学计量比混匀,在

Anti HIV-1 agents 5: Synthesis and anti-HIV-1 activity of some N-arylsulfonyl-3-acetylindoles in vitro

In continuation of our program aimed at the discovery and development of compounds with superior anti-human immunodeficiency virus type 1 (HIV-1) activity, 21N-arylsulfonyl-3-acetylindole analogs (2a-u) were synthesized and preliminarily evaluated as HIV-1 inhibitors in vitro. Among of all the analogs, several compounds exhibited significant anti-HIV-1 activity, especially N-phenylsulfonyl-3-acetyl-6-methylindole (2j) and N-(p-ethyl)phenylsulfonyl-3-acetyl-6-methylindole (2n) showed the most potent anti-HIV-1 activity with EC50 values of 0.36 and 0.13 mu g/mL, and TI values of >555.55 and 791.85, respectively. It demonstrated that introduction of the acetyl group at the 3-position of N-arylsulfonyl-6-methylindoles could generally lead to the more potent analogs. (C) 2010 Elsevier Ltd. All rights reserved.

Third-order optical nonlinearities of lead-free (Na1-xKx)(0.5)Bi0.5TiO3 thin films

(Na1-xKx)(0.5)Bi0.5TiO3 (NKBT) (x = 0.1, 0.2, and 0.3) thin films with good surface morphology and rhombohedral perovskite structure were fabricated on quartz substrates by a sol-gel process. The fundamental optical constants (the band gaps, linear refractive indices and absorption coefficients) of the films were obtained through optical transmittance measurements. The nonlinear optical properties were investigated by Z-scan technique performed at 532 nm with a picosecond laser. A two-photon absorption effect closely related with potassium-doping content was found in thin films, and the nonlinear refractive index n(2) increases evidently with potassium-doping. The real part of the third-order nonlinear susceptibility chi((3)) is much larger than its imaginary part, indicating that the third-order optical nonlinear response of the NKBT films is dominated by the optical nonlinear refractive behavior. These results show that NKBT thin films have potential applications in nonlinear optics. (C) 2007 Elsevier B.V. All rights reserved.

1GHz 0.5μm CMOS低噪声放大器的设计

从低噪声放大器(LNA)的设计原理出发,提出并设计了一种工作于1GHz的实用LNA.电路采用共源-共栅的单端结构,用HSPICE软件对电路进行分析和优化.模拟过程中选用的器件采用TSMC 0.5μm CMOS工艺实现.模拟结果表明所设计的LNA功耗小于15mW,增益大于10dB,噪声系数为1.87dB,IIP3大于10dBm,输入反射小于-50dB.可用于1GHz频段无线接收机的前端.

多层In_(0.55)Al_(0.45)As/A_(0.5)Ga_(0.5)As量子点的变温光致发光研究

测量了自组织多层In_(0.55)Al_(0.45)As/Al_(0.5)Ga_(0.5)As量子点的变温光致发光谱，同时观察到来自浸润层和量子点的发光，首次直接观察了浸润层和量子点之间的载流子热转移。分析发光强度随温度的变化发现浸润发光的热淬灭包括两个过程

不同尺寸分布的自组织In_(0.55)Al_(0.45)As/Al_(0.5)Ga_(0.5)As量子点的静压光谱

在15K测量了不同尺寸分布的In_(0.55)Al_(0.45)As/Al_(0.5)Ga_(0.5)As量子点的静压我致发光，静压范围为0--1.3GPa。常压下观察到三个发光峰，分别来源于不同尺寸的量子点(横向直径分别为26、52和62nm)的发光。它产的压力系数分别为82、94和98meV/GPa,都小于In_(0.55)Al_(0.45)As体材料带边的压力系数，特别是尺寸为26nm的小量子点比In_(0.55)Al_(0.45)As体材料带边小17%，并且压力系数随量子点尺寸的变小而减小。理论计算表明有效质量的增在和Γ-X混合是量子点压力系数变小的主要原因，并得到横向直径为26和52nm的小量子点的Γ－X混合势为15和10meV。根据实验还确定In_(0.55)Al_(0.45)As/Al_(0.5)Ga_(0.5)As量子点系统X能带具有Ⅱ类结构，并且估算出价带不连续量为0.15±0.02。

In_(0.5)Ga_(0.5)P/GaAs 材料系中有序结构的研究

于2010-11-23批量导入

MOCVD和GSMBE生长Ga（0.5）In（0.5）P 外延层中有序结构的研究

用MOCVD在(100)、GSMBE在(100)和(111)B GaAs上生长了GaInP外延层.PL测试表明,(100)衬底上GaIn PL 峰的能量比计算的带隙分别小43(GSMBE生长)和104meV(M(CVD生长).用Kurtz等人的模型对MOCVD和GSMBE生长的GaInP中有序度的不同进行了解释.并讨论了衬底晶向对GaInP中有序程度的影响.

自发有序Ga（0.5）In（0.5）P合金的静压光致发光研究

于2010-11-23批量导入

自发有序Ga（0.5）In（0.5）P合金的喇曼光谱研究

于2010-11-23批量导入