MANY-BEAM SIMULATIONS AND OBSERVATIONS OF LARGE-ANGLE CONVERGENT-BEAM ELECTRON-DIFFRACTION IMAGING OF CRYSTAL DEFECTS

Many-beam dynamical simulations and observations have been made for large-angle convergent-beam electron diffraction (LACBED) imaging of crystal defects, such as stacking faults and dislocations. The simulations are based on a general matrix formulation of dynamical electron diffraction theory by Peng and Whelan, and the results are compared with experimental LACBED images of stacking faults and dislocations of Si angle crystals. Excellent agreement is achieved.

Analysis of directional emission in square resonator lasers with an output waveguide

Square microcavity laser with an output waveguide is proposed and analyzed by the finite-difference time-domain (FDTD) technique. For a square resonator with refractive index of 3.2, side length of 4 microns, and output waveguide of 0.4-micron width, we have got the quality factors (Q factors) of 6.7×10~2 and 7.3×10~3 for the fundamental and first-order transverse magnetic (TM) mode near the wavelength of 1.5 microns, respectively. The simulated intensity distribution for the first-order TM mode shows that the coupling efficiency in the waveguide reaches 53%. The numerical simulation shows that the first-order transverse modes have fairly high Q factor and high coupling efficiency to the output waveguide. Therefore the square resonator with an output waveguide is a promising candidate to realize single-mode directional emission microcavity lasers.

单纵模多环形腔掺铒光纤激光器及其稳定性

介绍了一种多环形腔结构(MRC)的单纵模(SLM)掺铒光纤激光器(EDFL)。这种激光器通过在主环形腔中插入充当模式滤波器的三个长度不等的无源次级环形腔, 并结合腔内光纤布拉格光栅(FBG)形成多环形腔掺铒光纤激光器结构, 多环形谐振腔可保证激光器的单纵模输出。讨论了使激光器运行在单纵模状态的谐振腔理论。同时, 为了提高系统输出的频率稳定性, 采用外光注入方法有效地抑制了模式跳变和拍噪声, 改善了输出谱特性。实验得到在1550.225 nm处输出功率约3.6 dBm, 信噪比(SNR)>35 dB的单纵模输出光, 且测得线宽小于500 Hz。

掺Sn的In_20_3透明导电膜生长优先取向对其光电性能的影响

采用反应热蒸发法制备掺sn的In_20_3（ITO）透明导电膜，系统研究了ITO薄膜生长的优先取向对其光电性能的影响，结果表明，ITO薄膜（400）取向的优先生长对其透过率影响很小，但可明显增加载流子迁移率，从而有效降低了薄膜的方块电阻。在两个相同的薄膜硅／单晶硅太阳能电池上分别沉积（222）和（400）ITO优先取向膜，光电转换效率分别为10．3％和12．9％，表明（400）取向更有利于提高电池效率。经优化，最佳衬底温度（T_s）为225℃，最佳氧流量（fo_2）为4sccm。在优化的沉积条件下制备ITO薄膜，其电阻率可达到4.8x10~(-4)Ω·cm，可见波段的透过率大于90％，性能指数为3.8×10~(-2)□/Ω。

BPM-FSRM混合法分析SOI脊形波导与光纤耦合

用束传播-自由空间辐射模(BPM-FSRM)混合法计算了SOI脊形波导和光纤耦合时的透射率,提出计算反射率的积分公式.将该混合法和一般FSRM、菲涅尔公式-重叠积分法的计算结果相比较,提出只有在弱导条件下,传统的菲涅尔公式法和重叠积分法才可以同时使用.

静压下半导体微腔内激子与光子行为的研究

由于腔模与激子对压力的依赖关系不同，所以可以选择不同的压力使激子和光场处于不同的耦合状态，从而实现对耦合的调谐。利用这种办法，我们观测到了代表激子与光场强耦合作用的Rabi分裂。由于在我们现有样品结构中压力对激子本征行为的影响很小，与以前报道的温度、电场等调谐方式相比，这种调谐方法不仅可以有效地调谐半导体微腔内激子与腔模的耦合程度，而且能够保持激子的本征性质在整个调谐过程中基本不变。这有助于研究在强耦合过程中激子极化激元的本征性质。将实验结果与压力下激子与腔模耦合理论进行拟合，得出了正确的Rabi分裂值。

Modulation of Photonic Bandgap and Localized States by Dielectric Constant Contrast and Filling Factor in Photonic Crystals

The band structure of 2D photonic crystals (PCs) and localized states resulting from defects are analyzed by finite-difference time-domain (FDTD) technique and Pade approximation. The effect of dielectric constant contrast and filling factor on photonic bandgap (PBG) for perfect PCs and localized states in PCs with point defects are investigated. The resonant frequencies and quality factors are calculated for PCs with different defects. The numerical results show that it is possible to modulate the location, width and number of PBGs and frequencies of the localized states only by changing the dielectric constant contrast and filling factor.

CdF_2半导体膜中电子-表面声子强耦合对极化子性质的影响

采用改进的Huybrechts线性组合算符和变分方法，研究了半导体膜内电子与表面光学声子强耦合、与体纵光学声子弱耦合对极化子性质影响，得到了极化子的有效质量和自陷能随膜厚的变化规律。对CdF_2半导体，计算了不同支声子与电子的相互作用对极化子有效质量和自陷能的贡献。

GaAs（001）衬底上MOCVD生长的立方相GaN外延薄膜的光学性质研究

于2010-11-23批量导入

不同介质膜的InP MIS结构界面陷阱的研究

于2010-11-23批量导入

1.3 mu m GaInNAs/GaAs multiple-quantum-wells resonant-cavity-enhanced photodetectors

A GaInNAs/GaAs multiple quantum well (MQW) resonant-cavity enhanced (RCE) photodetector operating at 1.3 mum with the full-width at half-maximum of 5.5 nm was demonstrated. The GaInNAs RCE photodetector was grown by molecular-beam epitaxy using an ion-removed dc-plasma cell as nitrogen source. GaInNAs/GaAs MQW shows a strong exciton peak at room temperature that is very beneficial for applications in long-wavelength absorption devices. For a 100-mum diameter RCE photodetector, the dark current is 20 and 32 pA at biases of 0 and 6 V, respectively, and the breakdown voltage is -18 V. The measured 3-dB bandwidth is 308 MHz. The reasons resulting in the poor high speed property were analyzed. The tunable wavelength of 18 nm with the angle of incident light was observed.

The enhancement of diffusion by strain of InAs quantum dots in a GaAs matrix

We investigate the annealing behavior of Photoluminescence (PL) from self-assembled InAs quantum dots (QDs) with different thicknesses GaAs cap layers. The diffusion introduced by annealing treatment results in a blue-shift of the QD PL peak, and a decrease in the integrated intensity. The strain present in QDs enhances the diffusion, and the QDs with the cap layers of different thicknesses will experience a strain of different strength. This can lend to a, better understanding of the larger blue-shift of the PL peak of the deeper buried QDs, and the different variance of the full width at half maximum of the luminescence from QDs with the cap layers of different thicknesses.